International statements and definitions of the precautionary principle

The precautionary principle (PP), according to one of its definitions, says that lack of certainty, given the current scientific and technological knowledge, shall not delay effective and proportionate actions to prevent hazards, taking into account cost-benefit considerations. Rather than being a single principle, a variety of statements of the PP are found in international treaties and other documents. Apart from any specific legal force of the documents, countries (e.g., France) have used these statements as a starting point for their own guidance documents and regulations for addressing specific environmental and health issues, for example regulation of genetically modified organisms. Thus, any discussion of the precautionary principle must address a complex legal and regulatory situation. We briefly review different statements of the PP and important commentary, largely from the European Union. We provide references to the original source documents (many of which are found in English on the World Wide Web).     

Indicators for inspection and maintenance planning of concrete structures

Based on an idea introduced by Benjamin and Cornell (1970. Probability, statistics and decision for civil engineers. New York: McGaw Hill) and previous works by the authors it is demonstrated how condition indicators may be formulated for the general purpose of quality control and for assessment and inspection planning in particular. The formulation facilitates quality control based on sampling of indirect information about the condition of the considered components. This allows for a Bayesian formulation of the indicators whereby the experience and expertise of the inspection personnel may be fully utilized and consistently updated as frequentistic information is collected. The approach is illustrated on an example considering a concrete structure subject to corrosion. It is shown how half-cell potential measurements may be utilized to update the probability of excessive repair after 50 years. Furthermore in the same example it is shown how the concept of condition indicators might be applied to develop a cost optimal maintenance strategy composed of preventive and corrective repair measures.     

An application-specific protocol architecture for wireless microsensor networks

Networking together hundreds or thousands of cheap microsensor nodes allows users to accurately monitor a remote environment by intelligently combining the data from the individual nodes. These networks require robust wireless communication protocols that are energy efficient and provide low latency. We develop and analyze low-energy adaptive clustering hierarchy (LEACH), a protocol architecture for microsensor networks that combines the ideas of energy-efficient cluster-based routing and media access together with application-specific data aggregation to achieve good performance in terms of system lifetime, latency, and application-perceived quality. LEACH includes a new, distributed cluster formation technique that enables self-organization of large numbers of nodes, algorithms for adapting clusters and rotating cluster head positions to evenly distribute the energy load among all the nodes, and techniques to enable distributed signal processing to save communication resources. Our results show that LEACH can improve system lifetime by an order of magnitude compared with general-purpose multihop approaches.     

Organic Materials and Thin‐Film Structures for Cross‐Point Memory Cells Based on Trapping in Metallic Nanoparticles

Non‐volatile solid‐state memory cells based on composites of metal nanoparticles and polymers are embedded in organic semiconducting host materials. This paper presents data from a wide range of materials and device structures and shows that the switching phenomenon is commonly observed.     

Effects of extended dislocations on charge distribution in GaN epilayer

We have investigated the effect of extended dislocations (0.5-3 μm) on charge distribution in GaN epilayer grown by metalorganic chemical vapor deposition on (0001) sapphire using atomic force microscopy (AFM) and scanning surface potential microscopy (SSPM). It has been observed for the surface at the extended dislocations present in undoped GaN film to be negatively charged showing 0.04-0.2 V higher potential relative to regions that contain no dislocations. In addition to the higher potential at the dislocation core, the surrounding surfaces, including the edge of the dislocations, are also negatively charged in a symmetric way around the dislocations revealing crater-shaped higher potential regions (∼0.04 V) relative to surrounding dislocation-free area. The experimental results show that the protrusion-type of dislocation is also negatively charged and its potential is dependent on the size of dislocation.     

Intelligent Monitoring for Adaptation in Grid Applications

Grid applications access distributed, and often shared, resources. One consequence of this resource sharing is that measured application performance can vary widely and in unexpected ways. Determining the causes of poor performance, due to either anomalous application behavior or contention for shared resource use, and adapting to changing circumstances are critical to creation of robust Grid applications. Performance contracts and real-time adaptive control are two mechanisms to realize soft performance guarantees in Grid environments. Performance contracts formalize the relationship between application performance needs and resource capabilities. During execution, contract monitors use performance data to verify that expectations are met. When the contracted specifications are not satisfied, the system can choose to either adapt the application to available resources or reschedule the application on a new set of resources that can satisfy the original contract specifications. We describe an infrastructure for Grid application contract development and monitoring. This infrastructure, based on the Autopilot toolkit, provides flexible and scalable tools to assess both application and system behavior.     

370 W output power GaN-FET amplifier for W-CDMA cellular base stations

A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power.     

Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of mechanically flexible electronic devices on plastic substrates. Device quality amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiN/sub x/) films and thin film transistors (TFTs) were made using existing industrial plasma deposition equipment at the process temperatures as low as 75/spl deg/C and 120/spl deg/C. The a-Si:H TFTs fabricated at 120/spl deg/C demonstrate performance similar to their high-temperature counterparts, including the field effect mobility (/spl mu//sub FE/) of 0.8 cm/sup 2/V/sup -1/s/sup -1/, the threshold voltage (V/sub T/) of 4.5 V, and the subthreshold slope of 0.5 V/dec, and can be used in active matrix (AM) displays including organic light emitting diode (OLED) displays. The a-Si:H TFTs fabricated at 75/spl deg/C exhibit /spl mu//sub FE/ of 0.6 cm/sup 2/V/sup -1/s/sup -1/, and V/sub T/ of 4 V. It is shown that further improvement in TFT performance can be achieved by using n/sup +/ nc-Si contact layers and plasma treatments of the interface between the gate dielectric and the channel layer. The results demonstrate that with appropriate process optimization, the large area thin film Si technology suits well the fabrication of electronic devices on low-cost plastic substrates.