Low-threshold single-quantum-well InGaAs/GaAs lasers grown bymetal-organic chemical vapor deposition on structure substrates

Low-threshold current (as low as 3.0 mA) and high-external efficiency (≈88%) InGaAs/GaAs lasers emitting at 1 μm under a stable fundamental transverse mode were obtained by using the temperature engineered growth technique for the growth on prepatterned substrates     

Surface Morphology of Heat-Treated Ceramic Thin Films

The morphology of surfaces of several ceramic materials has been examined using transmission electron microscopy. The approach used was to prepare a sample for examination in the microscope, carefully clean it, and then heat-treat it. In the case of the oxides studied (alumina and spinel) the samples were heated in air; the non-oxides (α-SiC and β -SiC) were annealed under vacuum. The morphology in all but one case was such that the surface faceted parallel to the nearest low-index plane to give well-defined terraces; these were separated by ledges which also tended to facet parallel to the traces of low-index planes. The exception was the {1100} alumina surface, which appears to be unstable in air at temperatures close to 1400°C. A computer program using a multislice approach was used to estimate the height of the steps on the (0001) surface; the step heights appear to be multiples of the c lattice parameter. A reconstruction of this surface as a result of this heat treatment is also proposed.     

Ultrathin oxide-nitride dielectrics for rugged stacked DRAMcapacitors

Ultrathin dielectric materials that provide high capacitance values are needed for 64- and 256-Mb stacked DRAMs. It is shown that capacitance values as high as 12.3 fF/μm² can be obtained with ultrathin nitride-based layers deposited on rugged polysilicon storage electrodes. These films present the reliability and low leakage current levels required for 3.3-V applications. The nitride thickness, however, cannot be scaled much below 6 nm to avoid the oxidation-punchthrough mechanisms that appear when too-thin films are unable to withstand the reoxidation step     

Lyapunov-based control for switched power converters

Beginning with fundamental properties such as passivity or incremental passivity of the network elements comprised by a switched power converter, the nominal open-loop operation of a broad class of such converters is shown to be stable in the large via a Lyapunov argument. The obtained Lyapunov function is then shown to be useful for designing globally stabilizing controls that include adaptive schemes for handling uncertain nominal parameters. Numerical simulations illustrate the application of this control approach in DC-DC converters     

Planar AlGaAs/GaAs heterojunction bipolar transistors fabricatedusing selective W-CVD

The authors describe a planar process for the AlGaAs/GaAs HBTs in which collector vias are buried selectively, even to the base layers, with chemical vapor deposited tungsten (CVD-W) films. By using WF₆ /SiH₄ chemistry, W could be deposited on Pt films, which were overlapped 50 nm thick on the AuGe-based collector electrodes, without depositing W on the surrounding SiO₂ layers. Current gains of planar HBTs with 3.5-μm×3.5-μm emitters were up to 150, for a collector current density of about 2.5×10⁴ A/cm²     

Performance limitations of TDD wireless personal communications with asynchronous radio ports

A wireless personal communications system, based on a TDMA architecture, using asynchronous ports (radio base stations) and the TDD (time division duplexing) method is evaluated using computer simulations. It is shown that, without port synchronisation TDD methods cannot achieve the uplink quality obtainable by the FDD (frequency division duplexing) method.<>     

Use of a doubly polarized laser for remote powering of anintegrated optical modulator

Stable operation of an integrated optic modulator is demonstrated using a 1.3 μm doubly polarized laser as a depolarized source in conjunction with a long run of ordinary fiber. The laser is found to be unusually susceptible to feedback due to gain competition between the polarization modes. The resulting low-frequency polarization noise is significantly reduced by the addition of fiber isolators to the system     

Criminality in a sample of drug abusers in Greece

In order to produce mAbs directed specifically against HLA-DR10 molecule, transfected mouse L cells, expressing the DRB1*1001 allele, were used to immunize C3H mice over a period of 4 weeks. Two mAbs, 2C12 and 4B6, derived from this fusion were found to recognize, with different affinity, polymorphic epitopes of DR10 that are shared with DR1, 3, 7, and 9. These mAbs were screened on a large panel of homozygous B lymphoblastoid cell lines using microlymphocytotoxicity and the results were confirmed by flow cytometry. The reactive pattern of 2C12 and 4B6 was compared to that of MP10 human mAb also recognizing the DR10 specificity in addition to DR1, 2 and 9. Based on serologic specificity and cellular absorption experiments, we conclude that the epitopes the murine and human mAbs respectively recognize on the DR10 molecule, are probably different.     

Analysis and comparison of real-time sine-wave generation for PWMcircuits

Four methods for hardware and software generation in real time of sine waves suitable for PWM circuits are presented. The sine waves are derived from a truncated modified cosine Taylor series, wt(π-wt) function, a digitally filtered trapezoid, and a second-order differential equation. Triplen injection is incorporated by the addition of a defined magnitude triangular waveform of three times the fundamental frequency. Each sine wave generating technique is implemented, as applicable, in a programmable logic cell array and/or in microprocessor-based software. In each case, the output spectra and total harmonic distortion are compared with computer-simulated results     

Rapid thermal annealing effects on Si p+-n junctionsfabricated by low-energy FIB Ga+ implantation

Effects of rapid thermal annealing (RTA) on sub-100 nm p⁺ -n Si junctions fabricated using 10 kV FIB Ga⁺ implantation at doses ranging from 10¹³ to 10¹⁵ cm ^-2 are reported. Annealing temperature and time were varied from 550 to 700°C and 30 to 120 s. It was observed that a maximum in the active carrier concentration is achieved at the critical annealing temperature of 600°C. Temperatures above and below the critical temperature were followed by a decrease in the active concentration, leading to a `reverse' annealing effect