We report on the fabrication of 2-V-operating ZnO-based inverter with two n-channel thin-film transistors (TFTs) on 22-nm-thin organic/inorganic nanohybrid dielectric, which contains AlOx/TiOx/AlOx in triple-layer structure. The inverter shows a high voltage gain of ~20 under the supply voltage (VDD) of 2 V but with a marginal transition voltage of 0.1 V (operation range of 0-2 V). To control the transition voltage to a more adequate value, an 8-V gate pulse was applied on driving ZnO-TFT so that some of the channel electrons would be tunneled through the AlOx-based barrier and trapped in the TiOx-based layer. Our inverter then displayed an optimum transition voltage of 0.75 V. 相似文献
Two anthracene‐based star‐shaped conjugated small molecules, 5′,5″‐(9,10‐bis((4‐hexylphenyl)ethynyl)anthracene‐2,6‐diyl)bis(5‐hexyl‐2,2′‐bithiophene), HBantHBT, and 5′,5″‐(9,10‐bis(phenylethynyl)anthracene‐2,6‐diyl)bis(5‐hexyl‐2,2′‐bithiophene), BantHBT, are used as electron‐cascade donor materials by incorporating them into organic photovoltaic cells prepared using a poly((5,5‐E‐alpha‐((2‐thienyl)methylene)‐2‐thiopheneacetonitrile)‐alt‐2,6‐[(1,5‐didecyloxy)naphthalene])) (PBTADN):[6,6]‐phenyl‐C71‐butyric acid methyl ester (PC71BM) blend. The small molecules penetrate the PBTADN:PC71BM blend layer to yield complementary absorption spectra through appropriate energy level alignment and optimal domain sizes for charge carrier transfer. A high short‐circuit current (JSC) and fill factor (FF) are obtained using solar cells prepared with the ternary blend. The highest photovoltaic performance of the PBTADN: BantHBT :PC71BM blend solar cells is characterized by a JSC of 11.0 mA cm?2, an open circuit voltage (VOC) of 0.91 V, a FF of 56.4%, and a power conversion efficiency (PCE) of 5.6% under AM1.5G illumination (with a high intensity of 100 mW?2). The effects of the small molecules on the ternary blend are investigated by comparison with the traditional poly(3‐hexylthiophene) (P3HT):[6,6]‐phenyl‐C61‐butyric acid methyl ester (PC61BM) system. 相似文献
This paper provides a design guide for optimum design of an RF power amplifier with a predistortion linearizer. For a two-tone signal, three performance degradation factors, higher order terms, amplitude, and phase mismatches are analyzed quantitatively. The results are implemented to the design of optimized predistortion power amplifier for a WCDMA signal application. For the experiments, a 2.4-GHz class-AB power amplifier is fabricated using an LDMOSFET with a 30-W peak envelope power. A simple third-order predistorter is used to measure the relative phases of the harmonics, as well as to linearize the amplifier. The performance of the optimized predistortion power amplifier is excellent for an IS-95 code-division-multiple-access signal. Finally, a method for reducing the memory effects of the amplifier is devised to get a good cancellation performance for a wide-band signal, and the performance degradation caused by the memory effects is analyzed. For a forward-link four-carrier WCDMA signal, the predistortion power amplifier delivers an adjacent channel leakage ratio of -46 dBc at a 4-W average output power with a cancellation of 13.4 dB. 相似文献
An efficient hybrid modulation/demodulation scheme using a short duration pulse in the time-domain for ultra wideband-impulse radio (UWB-IR) systems is proposed. The proposed modulation scheme is pulse position modulation (PPM) of the UWB-IR standard modulation combined with differential encoding, and non-coherent energy detection (ED) adopting differential decoding is proposed for demodulation. Differential encoding makes a pulse that can transfer additive information bit into bits assigned in one symbol without increasing the symbol period. The BER performance is evaluated for 2-PPM, 4-PPM and the proposed HD-2PPM (which has the same symbol duration as BPPM and includes two information bits per symbol). The error performance indicates that the proposed scheme is an outstanding 0.5 dB over existing schemes of UWB-IR, and the data-rate performance shows that the proposed method has higher spectral efficiency than conventional methods that occupy the same duration as the proposed scheme.
In this paper, a gaze estimation method is proposed for use with a large‐sized display at a distance. Our research has the following four novelties: this is the first study on gaze‐tracking for large‐sized displays and large Z (viewing) distances; our gaze‐tracking accuracy is not affected by head movements since the proposed method tracks the head by using a near infrared camera and an infrared light‐emitting diode; the threshold for local binarization of the pupil area is adaptively determined by using a p‐tile method based on circular edge detection irrespective of the eyelid or eyelash shadows; and accurate gaze position is calculated by using two support vector regressions without complicated calibrations for the camera, display, and user's eyes, in which the gaze positions and head movements are used as feature values. The root mean square error of gaze detection is calculated as 0.79° for a 30‐inch screen. 相似文献
An accurate and analytical model for simultaneous switching noise (SSN) on ground lines in CMOS circuits is presented. This model can compute SSN for the case where only some drivers switch and the others remain quiet, that is, the model considers the loading effects on the quiet drivers. It was confirmed that the proposed model is more accurate than the existing ones through HSPICE simulation using the level 28 model for short-channel MOSFETs. The proposed model can provide useful design guides for CMOS driver circuits 相似文献
With common-source RF application amplifier, it is well known that the small substrate resistance helps to improve the output resistance as well as the transconductance. This idea can be easily extended to all CMOS transistors in RF applications. However, with cascode amplifier at high frequencies, the maximum available gain, noise figure minimum, and the tuned output impedance are improved by increasing the substrate resistance of the common-gate transistor, so that the range of operational frequency can be extended. These contradicting phenomenons between the common-source and common-gate topology can be explained theoretically, and the supporting measurement results are presented base on a 0.35 /spl mu/m CMOS technology. 相似文献