Data mining of resilience indicators

In recent years, the Asia-Pacific region has experienced several financial setbacks, including speculative attacks in 1998 and the SARS outbreak in 2003. Financial stresses of this nature are unanticipated, and not all of the dangers can be predicted by the examination of market information and macroeconomic indicators. The Early Warning System (EWS) that has been adopted by the International Monetary Fund may not be able to predict future financial crises for all possible scenarios, because shocks come in many different forms. To supplement the EWS, this paper proposes a data mining framework to measure the resilience of an economy. The resilience framework does not predict a crisis, but rather assesses the current state of health of an economy and its ability to withstand a financial shock should one occur. The framework is based on a feedback system consisting of two stages. The first stage assigns a resilience score to each economy based on a fuzzy logic scoring scheme that is built on the ambiguous reasoning of experts. The second stage uses the classification tree approach to estimate thresholds for each economic indicator, and examines the quality of the fuzzy score. The result from the second stage is then passed back to the first stage as feedback. The final result is obtained when the feedback system reaches its equilibrium state. The proposed resilience framework is applied to the external-sector and the public-sector economies of several countries to illustrate its applicability.     

A tolerant approach to reconstruct topology from unorganized trimmed surfaces

Presented in this paper is a topology reconstruction algorithm from a set of unorganized trimmed surfaces. Error-prone small geometric elements are handled to give proper topological information. It gives complete topology to topologically complete models, and it is also tolerant to incomplete models. The proposed algorithm is vertex-based in that clues for topological information are searched from the set of vertices first, not from that of edges.     

Austenitizing treatment influence on the electrochemical corrosion behavior of 0.3C-14Cr-3Mo martensitic stainless steel

Effects of austenitizing treatment temperatures on aqueous corrosion properties of martensitic stainless steels were investigated by electrochemical tests (potentiodynamic test, potentiostatic test and electrochemical impedance spectroscopy), and surface analyses (optical microscopy and XRD). The results of potentiodynamic test revealed that the breakdown potential increased with the increased austenitizing temperature, indicating increased relative resistance to initiation of localized corrosion. EIS measurements showed that MSS3 (1030 °C) exhibits larger polarization resistance value than MSS1 (970 °C) and MSS2 (1000 °C) at passive and breakdown states. This was caused by decreasing the amount of Cr-rich M₂₃C₆ carbide which acts as preferential sites for pitting corrosion.     

Recent Development of Cognitive and Neuropsychological Assessment in Asian Countries.

There is a growing trend of research in neuropsychological assessment in Asia: The mean number of published studies increased from 1.8 in the 1980s to 16.0 in 2 recent years. About 40% of the studies reviewed concerned test development or adaptation, with the latter greatly outnumbering the former. To facilitate the test selection for clinical use, 36 clinical measures were evaluated based on some statistical criteria. The results showed that only 8 neuropsychological tests (5 Chinese. 2 Korean, and 1 Japanese) met the criteria. Given that Asian and Western populations differ on certain cognitive processes, future development of neuropsychological assessment measures in Asia should move from the adaptation of Western tests toward the construction of original tests with better ecological validity. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Category Norms as a Function of Culture and Age: Comparisons of Item Responses to 105 Categories by American and Chinese Adults.

Understanding how aging influences cognition across different cultures has been hindered by a lack of standardized, cross-referenced verbal stimuli. This study introduces a database of such item-level stimuli for both younger and older adults, in China and the United States, and makes 3 distinct contributions. First, the authors specify which item categories generalize across age and/or cultural groups, rigorously quantifying differences among them. Second, they introduce novel, powerful methods to measure between-group differences in freely generated ranked data, the rank-ordered logit model and Hellinger Affinity. Finally, a broad archive of tested, cross-linguistic stimuli is now freely available to researchers: data, similarity measures, and all stimulus materials for 105 categories and 4 culture-by-age groups, comprising over 10,000 fully translated unique item responses. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Trenched‐Sinker LDMOSFET (TS‐LDMOS) Structure for 2 GHz Power Amplifiers

This paper proposes a new LDMOSFET structure with a trenched sinker for high‐power RF amplifiers. Using a low‐temperature, deep‐trench technology, we succeeded in drastically shrinking the sinker area to one‐third the size of the conventional diffusion‐type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power‐added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below ?40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.     

Data retention characteristics of sub-100 nm NAND flash memory cells

In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.     

Catalytic dehydrogenation of ethylbenzene with carbon dioxide: promotional effect of antimony in supported vanadium–antimony oxide catalyst

Alumina-supported vanadium oxide, VO_x/Al₂O₃, and binary vanadium–antimony oxides, VSbO_x/Al₂O₃, have been tested in the ethylbenzene dehydrogenation with carbon dioxide and characterized by S_BET, X-ray diffraction, X-ray photoelectron spectroscopy, hydrogen temperature-programmed reduction and CO₂ pulse methods. VSbO_x/Al₂O₃ exhibited enhanced catalytic activity and especially on-stream stability compared to VO_x/Al₂O₃ catalyst. Incorporation of antimony into VO_x/Al₂O₃ increased dispersion of active VO_x species, enhanced redox properties of the systems and formed a new mixed vanadium–antimony oxide phase in the most catalytically efficient V_0.43Sb_0.57O_x/Al₂O₃ system.     

A new time-domain discontinuous space-vector PWM technique in overmodulation region

A new discontinuous modulation method based on space-vector control is proposed and analyzed. The proposed technique employs a pulse-dropping method and is designed in the time domain. It features a very wide modulation range while maintaining the required waveform qualities and switching numbers in the overmodulation region. Since the modulation method and modulation index equation are simple, the proposed technique can be easily implemented by software and is applicable to the overmodulation region in ac motor drives. The performance indexes are discussed and experiments have been performed.     

89-GHz fT room-temperature silicon MOSFETs

The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f_T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region