Precipitation behavior of σ phase in fusion zone of dissimilar stainless steel welds during multi-pass GTAW process

The purpose of this study is to investigate the precipitation characteristics of σ phase in the fusion zone of stainless steel welds at various welding passes during a tungsten are welding (GTAW) process. The morphology, quantity, and chemical composition of the δ-ferrite and σ phase were analyzed using optical microscopy (OM), a ferritscope (FS), a X-ray diffractometer (XRD), scanning electron microscopy (SEM), an electron probe micro-analyzer (EPMA), and a wavelength dispersive spectrometer (WDS), respectively. Massive δ-ferrite was observed in the fusion zone of the first pass welds during welding of dissimilar stainless steels. The σ phase precipitated at the inner δ-ferrite particles and decreased δ-ferrite content during the third pass welding. The σ and δ phases can be stabilized by Si element, which promoted the phase transformation of σ→ϱ+λ₂ in the fusion zone of the third pass welds. It was found that the σ phase was a Fe−Cr−Si intermetallic compound found in the fusion zone of the third pass welds during multi-pass welding.     

Anomalous variations of OFF-State leakage current in poly-Si TFTunder static stress

Studies the anomalous variations of the OFF-state leakage current (I_OFF) in n-channel poly-Si thin-film transistors (TFTs) under static stress. The dominant mechanisms for the anomalous I_OFF can be attributed to (1) I_OFF increases due to channel hot electrons trapping at the gate oxide/channel interface and silicon grain boundaries and (2) I_OFF decreases due to hot holes accumulated/trapped near the channel/bottom oxide interface near the source region. Under the stress of high drain bias, serious impact ionization effect will occur to generate hot electrons and hot holes near the drain region. Some of holes will be injected into the gate oxide due to the vertical field (~(V_Gstress V_Dstress)/T _OX) near the drain and the others will be migrated from drain to source along the channel due to lateral electric field (~V_Dstress/L_CH)     

A new method for calculating loss coefficients [of power systems]

A method is proposed which avoids many limitations associated with traditional B-coefficient loss coefficient calculation. The proposed method, unlike the traditional B-coefficient method, is very fast and can handle line outages. The method utilizes network sensitivity factors which are established from DC load flow solutions, Line outage distribution factors (ODFs) are formulated using changes in network power generations to simulate the outaged line from the network. The method avoids the use of complicated reference frame transformations based upon Kron's tenser analysis. The necessity of data normalization used in least squares and the evaluation of the slope of &thetas;_j versus PG_n is not necessary with the proposed method. Using IEEE standard 14-bus and 30-bus systems, the method's results are compared against results obtained from an AC load flow program (LFED). The method's solution speed is compared to that of the LFED method, the base case database method and the conventional B-coefficient method based on A_jn-factor. The proposed method is easy to implement and, when compared to other methods, has exhibited good accuracy and rapid execution times. The method is well suited to online dispatch applications     

Study on phase behavior–impact strength relationship of unsaturated polyester/polyurethane hybrid polymer network

The phase behavior of a hybrid polymer network (HPN) composed of poly[(propylene glycol maleate)-co-(propylene glycol phthalate)] crosslinked with styrene and polyester–urethane crosslinked with methylene-bis-ortho-chloroaniline was examined. The correlation between phase separation and impact strength of the HPNs is discussed. The composition of HPNs has an effect on their properties.     

Parasitic Bipolar Junction Transistors in a Floating-Gate MOSFET for Fluorescence Detection

In this letter, we examined whether the parasitic bipolar junction transistors (BJTs) in the MOSFET fabricated by the standard CMOS process can play a role as a fluorescence detector. To suppress the action of two vertical parasitic BJTs, the gate and n-well were tied in the parasitic BJTs, and the body node was connected to the drain. The proposed device was compared with the inherent and the parasitic diodes in the MOSFET. It had 100 times higher photocurrents than the diodes in the MOSFET. In addition, it was applied for the detection of the fluorescent signal, and could detect near 10 nM of Alexa 546. Therefore, CMOS-process-compatible parasitic BJTs can be used as a photodetector in an integrated fluorescence detector.     

悟

“悟”是一种对客观的事和物的一种感知,是对事和物获取了解、获取知效,是人们求得理解的一种启示、一种认识的过程。一般地说,“我对事和物,意在彻悟”,是指人们得到充分的悟性,特别对意、意义的悟,有的很快领会,有的要耗费时日,有的要经过一定的时间乃至终身。悟性就是理解的     

力量空间

设计师做自己办公空间设计往往想法很多,也很苛求。这种设计状态会令将来的作品显得杂乱、稚嫩, 容易出现“昏招”,或者流于刻板、拘谨、不灵动。我懂得调整自己的状态:有时记住自己是甲方,可以任意发挥,有时把它忘了,也就不必太苛求,以致经常改动设计,不坚决。由于急于搬迁的缘故,加之那时我正好出差在外,所以本案设计周期较短。几天时间在宾馆里伏案设计,倒给出了一个好的状态:略去许多泉涌的想法, 只抓住最好的,好比画者在做速写,把控大局。凭我个人的喜好和习惯,以及对设计公司办公空间的理解与思考,我在凝神中拔高自己,发现塑造一种力量空间会比较接近于表达设计师这种群体的周遭环境,无需过多地出招,无需捕捉人的眼球。力量是潜在的,它无处不在,闭着眼也能抓住你的心。我就这样确立了设计主旨。     

Optimization of a schottky barrier mixer diode in the submillimeter wave region

We have designed a mixer Schottky barrier diode (SBD) for use in the submillimeter wave region with a structure optimized for minimum noise temperature. The dependence of mixer noise temperature upon thickness and doping density of the epitaxial layer and diode diameter of SBDs was simulated within the framework of existing theories. Special care was taken to formulate the SBD current-voltage and capacitance-voltage relations in a way that correctly describes the behavior of real SBDs.