全文获取类型
收费全文 | 357204篇 |
免费 | 27915篇 |
国内免费 | 15711篇 |
专业分类
电工技术 | 20865篇 |
技术理论 | 45篇 |
综合类 | 25374篇 |
化学工业 | 59655篇 |
金属工艺 | 20784篇 |
机械仪表 | 22456篇 |
建筑科学 | 27621篇 |
矿业工程 | 11680篇 |
能源动力 | 9698篇 |
轻工业 | 23990篇 |
水利工程 | 6745篇 |
石油天然气 | 23419篇 |
武器工业 | 2795篇 |
无线电 | 38777篇 |
一般工业技术 | 39351篇 |
冶金工业 | 18527篇 |
原子能技术 | 3627篇 |
自动化技术 | 45421篇 |
出版年
2024年 | 1455篇 |
2023年 | 5559篇 |
2022年 | 9858篇 |
2021年 | 13854篇 |
2020年 | 10426篇 |
2019年 | 8545篇 |
2018年 | 9848篇 |
2017年 | 11054篇 |
2016年 | 10128篇 |
2015年 | 13859篇 |
2014年 | 17444篇 |
2013年 | 20895篇 |
2012年 | 22687篇 |
2011年 | 25163篇 |
2010年 | 22234篇 |
2009年 | 21062篇 |
2008年 | 20646篇 |
2007年 | 19689篇 |
2006年 | 20059篇 |
2005年 | 17653篇 |
2004年 | 11970篇 |
2003年 | 10699篇 |
2002年 | 9902篇 |
2001年 | 8810篇 |
2000年 | 8757篇 |
1999年 | 9391篇 |
1998年 | 7184篇 |
1997年 | 6137篇 |
1996年 | 5813篇 |
1995年 | 4785篇 |
1994年 | 3886篇 |
1993年 | 2623篇 |
1992年 | 2077篇 |
1991年 | 1570篇 |
1990年 | 1233篇 |
1989年 | 995篇 |
1988年 | 830篇 |
1987年 | 524篇 |
1986年 | 410篇 |
1985年 | 258篇 |
1984年 | 207篇 |
1983年 | 164篇 |
1982年 | 128篇 |
1981年 | 76篇 |
1980年 | 96篇 |
1979年 | 43篇 |
1978年 | 17篇 |
1977年 | 23篇 |
1976年 | 28篇 |
1973年 | 9篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
81.
A simple method of alternatively using high-inversion and moderate-inversion erbium-doped fiber amplifiers (EDFA's) in an optical amplifier chain is presented to mitigate the self-filtering effect and equalize both signal power and signal-to-noise ratio (SNR) of multiple wavelength channels in wavelength-division multiplexing (WDM) transmission systems. The performance of the compensated system with alternatively used high- and moderate-inversion amplifiers is compared with the uncompensated ones where only moderate- or high-inversion amplifiers are employed. The result shows that the compensated system has a flatter gain profile, a lesser signal power spread, and SNR degradation 相似文献
82.
The effect of oxygen content on superconductivity of the 2212 and 2223 phase has been studied. By comparing the excess oxygen, the modulation vector, the XRD patterns, and the electric resistivity of 2212 and 2223 phase samples obtained with different post-annealing conditions, i.e., annealing at 600°C or quenching from 860°C, it was found that the super-conductivity is markedly influenced by both the defect distribution in non-Bi layers and the interstitial oxygens incorporated in the Bi-O layers. A tentative explanation for this is given. 相似文献
83.
By using scanning polarization force microscopy,the deliquescence process and the atomic steps on the cleavage surface of CaCO3 in air were studied in situ.Under an exposure to medium umidity(-57%),the sloiw step movement has been observed. 相似文献
84.
草酸二乙酯气相催化加氢合成乙二醇的研究 总被引:12,自引:0,他引:12
对草酸二乙酯气相催化加氢生成乙二醇反应进行了实验研究。研制了不含铬的铜基催化剂,并考察了催化剂的制备条件对反应结果的影响。结果表明,Cu/SiO_2质量比为0.67,活化温度为350℃时最佳。在上述催化剂制备的基础上,提出了最佳反应条件。 相似文献
85.
Li Xi Zuoyan Peng Wei Fan Kui Guo Gu Jianmin Muyu Zhao Wu Guoqiang 《Materials Science and Engineering: B》1996,40(2-3):147-152
SrMgxTi1 - xO3 nanocrystals (x = 0.1–0.6) were synthesized by the stearic acid gel method. Powder samples were characterized by X-ray diffraction and X-ray photoelectron (XP) spectroscopy. The results showed that the lattice parameter a and the O 1s XP spectrum changed not only with the Mg content x but also with the grain size d of the samples. The conductivity of a thick film specimen fabricated on an aluminium oxide wafer was investigated in a nitrogen—oxygen atmosphere. 相似文献
86.
87.
88.
89.
2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study
We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method 相似文献
90.
Chun Hu Ji Zhao Li G.P. Liu P. Worley E. White J. Kjar R. 《Electron Device Letters, IEEE》1995,16(2):61-63
The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process 相似文献