Bound for Minkowski metric or quadratic metric applied to VQcodeword search

A bound for a Minkowski metric based on L_p distortion measure is proposed and evaluated as a means to reduce the computation in vector quantisation. This bound provides a better criterion than the absolute error inequality (AEI) elimination rule on the Euclidean distortion measure. For the Minkowski metric of order n, this bound contributes the elimination criterion from the L₁ metric to L _n metric. This bound can also be an extended quadratic metric which can be a hidden Markov model (HMM) with a Gaussian mixture probability density function (PDF). In speech recognition, the HMM with the Gaussian mixture VQ codebook PDF has been shown to be a promising method     

环保型火力发电技术概述

本文主要介绍了火力发电的主要应用的环保技术,并对各种技术进行了对比,并重点介绍了超临界、湿法脱硫,SCR,流化床及联合循环技术。     

国产首台300MW燃油直流炉机组的化学水处理工作

本文回顾和总结了望亭电厂第一台国产300MW机组的化学水处理及监督工作,文章强调了慎重选择补给水源和预处理的重要性,并指出补给水处理设备应能满足水源水质变化的要求,否则要有应急措施;应提高凝结水精处理的质量,以确保给水水质;给水联合处理将为减轻水汽系统和锅内腐蚀、结垢开创新的途径:认真执行有效的机、炉停用保护措施:防止凝汽器和热交换器管泄漏以及逐步实现化学监督现代化管理是大机组防腐防垢的重要内容。     

新的地域并网式太阳能发电系统的电力经济分析与设计

提出一种新的地域并网式太阳能发电系统，即带有电力存储系统的地域并网式太阳能发电系统。从电力的有效利用、经济性的角度对这种新的地域并网式太阳能发电系统进行了研究，提出了系统的设计以及选定电力存储系统存储容量的方法，然后针对不同的条件选择了相应的电力存储系统的容量。     

Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/N/sub y/ base layers

The fundamental lower limit on the turn on voltage of GaAs-based bipolar transistors is first established, then reduced with the use of a novel low energy-gap base material, Ga/sub 1-x/In/sub x/As/sub 1-y/N/sub y/. InGaP/GaInAsN DHBTs (x/spl sim/3y/spl sim/0.01) with high p-type doping levels (/spl sim/3/spl times/10/sup 19/ cm/sup -3/) and dc current gain (/spl beta//sub max//spl sim/68 at 234 /spl Omega///spl square/) are demonstrated. A reduction in the turn-on voltage over a wide range of practical base sheet resistance values (100 to 400 /spl Omega///spl square/) is established relative to both GaAs BJTs and conventional InGaP/GaAs HBTs with optimized base-emitter interfaces-over 25 mV in heavily doped, high dc current gain samples. The potential to engineer turn-on voltages comparable to Si- or InP-based bipolar devices on a GaAs platform is enabled by the use of lattice matched Ga/sub 1-x/In/sub x/As/sub 1-y/N/sub y/ alloys, which can simultaneously reduce the energy-gap and balance the lattice constant of the base layer when x/spl sim/3y.     

Half-time image reconstruction in thermoacoustic tomography

Thermoacoustic tomography (TAT) is an emerging imaging technique with great potential for a wide range of biomedical imaging applications. In this paper, we propose and investigate reconstruction approaches for TAT that are based on the half-time reflectivity tomography paradigm. We reveal that half-time reconstruction approaches permit for the explicit control of statistically complementary information that can result in the optimal reduction of image variances. We also show that half-time reconstruction approaches can mitigate image artifacts due to heterogeneous acoustic properties of an object. Reconstructed images and numerical results produced from simulated and experimental TAT measurement data are employed to demonstrate these effects.     

A 2.4-GHz CMOS transceiver for Bluetooth

A fully integrated CMOS transceiver tuned to 2.4 GHz consumes 46 mA in receive mode and 47 mA in transmit mode from a 2.7-V supply. It includes all the receive and transmit building blocks, such as frequency synthesizer, voltage-controlled oscillator (VCO), power amplifier, and demodulator. The receiver uses a low-IF architecture for higher level of integration and lower power consumption. It achieves a sensitivity of -82 dBm at 0.1% BER, and a third-order input intercept point (IIP3) of -7 dBm. The direct-conversion transmitter delivers a GFSK modulated spectrum at a nominal output power of 4 dBm. The on-chip voltage controlled oscillator has a close-in phase-noise of -120 dBc/Hz at 3-MHz offset     

High quality interpoly dielectrics deposited on thenitrided-polysilicon for nonvolatile memory devices

High quality interpoly dielectrics have been fabricated by using NH₃ and N₂O nitridation on polysilicon and deposition of tetra-ethyl-ortho-silicate (TEOS) oxide with N₂O annealing. The surface roughness of polysilicon is improved and the value of weak bonds is reduced due to nitrogen incorporation at the interface, which improves the integrity of interpoly dielectrics. The improvements include a higher barrier height, breakdown strength, and charge-to-breakdown, and a lower leakage current and charge trapping rate than counterparts. It is found that this method can simultaneously improve both charge-to-breakdown (up to 20 C/cm² ) and electric breakdown field (up to 17 MV/cm)     

江汉盆地盐类矿产的富集规律及找矿方向浅析

江汉盆地白垩—第三系由两大沉积成盐旋回组成,主要含盐层位均位于沉积成盐旋回的中偏上部。控盆断裂的差异性活动,导致了盆地的沉积中心由西向东迁移。盆内断裂将盆地分割成若干个凹陷区和凸起区。根据凹陷特征和所处部位,将其分为三种类型(盆内深凹、盆内浅凹和盆边凹陷),不同类型的凹陷具有不同的成矿特点。盆内凹陷大多是受主干断裂控制的不对称凹陷,其矿物相带的分布也往往表现为靠近主干断裂一侧的偏心环状,这种沉积相模式对在凹陷的不同部位寻找不同的盐类矿产具有一定的指示意义。根据盐类聚集规律,江汉盆地的进一步找盐方向是:1.盆内深凹是找钾有利地段;2.盆内浅凹与盆内深凹过渡带是无水芒硝成矿有利区;3.盆内浅凹缓坡带及宽缓低凸起区是寻找自然硫的重要靶区。     

二分图的无关分解及其在覆盖问题中的应用

为了大容量存贮器制造过程中因缺陷而造成成品率低的问题，或并行阵列中的容错重组问题，一般采用冗余修复的方法，该问题可以归结为对二分图的覆盖，且该问题属于ＮＰ完全问题。