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81.
Regional Geological Information System combines the multi-dimensional and dynamic spatial information into an integrated spatial information system. 3D geological modeling and its preprocessing or post-processing are the most difficult problems for constructing the system. Based on the current 3D GIS technique, some basic problems in establishing the system are discussed in this paper, including 3D spatial data model, 3D geological modeling, and visualization of 3D geological data. A kind of 3D vector data model based on boundary representation for geological object and its topology was developed in order to model and visualize complex geological structures. In addition, some key techniques are pointed out for further study. 相似文献
82.
Compared with the single sulphurating treatment, the duplex treatment of nitrocarburizing-sulphurating can more effectively improve the properties of steel such as friction-reducing, wear resistance and anti-scuffing. Under the same processing parameters, the sulphide layers were fabricated on the surface of CrMoCu alloy cast iron by single ion-sulphurating treatment and nitrocarburizing-sulphurating duplex treatment, respectively. Through the analysis of the sulphide, the effect of the nitrocarburizing on the fabrication of the sulphide layer was investigated. And the result shows that the fabrication of sulphide layer is promoted by the nitrocarburizing treatment. 相似文献
83.
对63MN五坐标数控快锻机在自由锻和恒温锻不同的工艺过程进行分析,根据压机设备压力高、流量大的特点,进行系统的优化设计。并对降低噪声、抗污染、保证系统可靠性、实现系统的高精度、高响应等要求,提出了合理的设计方案。 相似文献
84.
升温速率对金属熔化和过热的影响 总被引:1,自引:0,他引:1
采用分子动力学方法和QSC(Quantum Sutton-Chen)力场研究了升温速率对金属银和金属铅的熔化和过热行为的影响。研究结果表明,升温速率对金属银和铅的熔化和过热行为有很大影响,随着升温速率的升高,金属的熔点有所升高。高的升温速率会导致金属体系内部无序化程度增加,降低了熔化相变的能垒。升温速率导致的银和铅完美晶体的过热极限分别为1450K和800K。 相似文献
85.
86.
Quanbo Zou Zhimin Tan Zhenfeng Wang Jiangtao Pang Xin Qian Qingxin Zhang Rongming Lin Sung Yi Haiqing Gong Litian Liu Zhijian Li 《Journal of microelectromechanical systems》1998,7(2):224-234
A novel principle “electret” microphone, i.e., floating electrode electret microphone, is proposed and implemented in this study. Single-chip fabrication and corrugation technique are used in the design and fabrication of the microphone. The floating electrode is encapsulated by highly insulated materials to ensure that there is no electric-leakage passage between the floating electrode and the electrodes of the microphone. Net-free electronic charges (not “bonded” charges as in traditional electret) in the floating electrode can excite the electric field, which is similar to that of the traditional electret. The floating electrode can be easily charged by use of the “hot” electron technique, available using the avalanche breakdown of the p+-n junction. Therefore, the electret microphone is rechargeable, which can greatly increase the lifetime of the device. The preamplifier has been on-chip integrated in a junction-field-effect transistor (JFET) source-follower type with resistors by use of ion implantation. Electret charges are banded in a deep potential trap, thus, this microphone can operate at a high temperature (as high as 300°C) and has high stability and reliability. Experiments show that the prototype has a 3-mV/Pa sensitivity and a larger than 21-kHz frequency bandwidth in a 1 mm ×1-mm diaphragm area. Microphone performance can be further improved by optimized process and design. The fabrication is completely integrated-circuit (IC) compatible, hence, the microphone shows promise in integrated acoustic systems 相似文献
87.
88.
SUN Guosheng Zhang Yongxing Gao Xin Wang Lei Zhao Wanshun Zeng Yiping Li Jinmin 《中国稀土学报(英文版)》2004,22(Z3)
Homoepitaxial growth of 4H-SiC on off-oriented Si-face(0001 ) substrates was performed by using the step-controlled epitaxy technique in a newly developed low-pressure hot-wall CVD (LP-HWCVD) system with a horizontal aircooled quartz tube at around 1500 ℃and 1.33 × 104 Pa by employing SiH4 C2H4 H2. In-situ doping during growth was carried out by adding NH3 gas into the precursor gases. It was shown that the maximum Hall mobility of the undoped 4H-SiC epilayers at room temperature is about 430 cm2 ·V -1 ·s -1 with a carrier concentration of ~ 1016 cm-3 and the highest carrier concentration of the N-doped 4H-SiC epilayer obtained at NH3 flow rate of 3 sccm is about 2.7 × 1021 cm-3 with a mobility of 0.75 cm2 ·V -1 ·S -1. SiC p-n junctions were obtained by epitaxially growing N-doped 4H-SiC epilayers on Aldoped 4H-SiC substrates. The C-V characteristics of the diodes were linear in the 1/C3-V coordinates indicating that the obtained p-n junctions were graded with a built-in voltage of 2.7 eV. The room temperature electroluminescence spectra of 4H-SiC p-n junctions are studied as a function of forward current. The D-A pair recombination due to nitrogen donors and the unintentional, deep boron center is dominant at low forward bias, while the D-A pair recombination due to nitrogen donors and aluminum acceptors are dominant at higher forward biases. The p-n junctions could operate at temperature of up to 400 ℃, which provides a potential for high-temperature applications. 相似文献
89.
以事故数据为基础研究事后风险状态,建立了基于改进深度森林算法的交通运行风险状态等级预测模型.首先分析了事故特征重要度,建立了基于极端梯度提升算法的事故特征筛选机制,引入贝叶斯参数寻优和十折交叉验证法实现了深度森林模型的超参数优化;同时设计了循环多粒度扫描方法和加权级联森林结构,获取了交通运行风险状态等级与事故特征的映射... 相似文献
90.
The mode of mobile computing originated from distributed computing and it has the un-idempotent operation property, therefore the deadlock detection algorithm designed for mobile computing systems will face challenges with regard to correctness and high efficiency. This paper attempts a fundamental study of deadlock detection for the AND model of mobile computing systems. First, the existing deadlock detection algorithms for distributed systems are classified into the resource node dependent ( RD ) and the resource node independent (RI) categories, and their corresponding weaknesses are discussed. Afterwards a new RI algorithm based on the AND model of mobile computing system is presented. The novelties of our algorithm are that: 1 ) the blocked nodes inform their predecessors and successors simultaneously; 2) the detection messages (agents) hold the predecessors information of their originator; 3 ) no agent is stored midway. Additionally, the quit-inform scheme is introduced to treat the excessive victim quitting problem raised by the overlapped cycles. By these methods the proposed algorithm can detect a cycle of size n within n - 2 steps and with ( n^2- n - 2 )/2 agents. The performance of our algorithm is compared with the most competitive RD and RI algorithms for distributed systems on a mobile agent simulation platform. Experiment results point out that our algorithm outperforms the two algorithms under the vast majority of resource configurations and concurrent workloads. The correctness of the proposed algorithm is formally proven by the invariant verification technique. 相似文献