非线性晶体KBe_2BO_3F_2的深紫外输出特性

深紫外(DUV)相干光源对于光刻技术、激光微加工、激光光谱仪等均具有重要的意义。KBe2BO3F2(KBBF)晶体是目前唯一可直接倍频产生深紫外激光的非线性光学晶体。通过数值计算,详细分析KBBF晶体的深紫外输出特性,包括KBBF晶体的折射率、相位匹配角、有效非线性系数、光波走离角、允许参量和转换效率等。结果对于KBBF晶体用于产生深紫外全固态激光(DPL)的实验研究提供重要的理论依据。     

RGPO干扰条件下一种改进的机动目标跟踪方法

针对RGPO干扰下目标跟踪的特点和现有方法的不足,文中提出了一种RGPO干扰下机动目标的跟踪方法.首先采用三门限检验对RGPO干扰进行鉴别的方法,其次利用最近距离准则进行数据关联.仿真结果表明:利用三门限检验有效的降低了干扰的错误鉴别概率,而采用最近距离准则又能够有效消除RGPO和杂波的影响,跟踪精度比现有的方法有了较明显的提高.因此本方法对RGPO干扰下的机动目标跟踪具有一定的实际应用价值.     

滑翔制导炸弹变增益鲁棒控制器设计与仿真

针对滑翔制导炸弹,提出了一种变增益鲁棒控制器设计方法.通过将作战空域划分为几个小空域,并在其中一边界点对线性化后的系统,采用双回路鲁棒设计方法,设计满足系统性能和动态性能的鲁棒控制器.然后在各个边界点,采用插值方法将控制器内回路设计成与高度和速度相关的连续变增益控制回路,使内回路控制参数随着滑翔制导炸弹的飞行状态变化而变化,从而提高系统的性能.仿真结果表明,设计的控制器具有良好的时域响应性能,可以控制滑翔制导炸弹在大范围飞行过程中稳定,获得了满意的控制效果.     

导弹技术准备区间GERT网络建模研究

在应用随机网络解决导弹技术准备建模问题的过程中要求准确知道各阶段参数的概率分布.但是由于信息的贫乏以及信息的不完全性,无法对某些参数的分布进行准确的判断,因此区间数成为有效的描述工具.建立了导弹技术准备区间数随机网络模型,对其求解问题进行了研究,并给出了在模糊度无法计算情况下基于技术准备要求的区间数估计精度的结果判断方法.最后通过算例说明了模型的应用.     

爆炸抛撒方式对FAE云雾爆轰特性及威力影响的实验研究

为探讨中心药管和径向药管爆炸抛撒对FAE爆轰特性及威力影响,通过高速录像、压电传感器和红外热像仪记录FAE静爆实验。获得两发50kg PO、1.5kg抛撒装药、两种爆炸抛撒作用下的云雾扩散、火球温度、冲击波超压数据。结果表明,采用中心药管和径向药管爆炸抛撒形成的云雾覆盖面积和起爆形态相差不大;后者在云雾和破片均匀性方面优于前者,火球温度比前者增益约12%,冲击波超压比前者增益约20%~35%。     

蓝牙电话系统的切换方案

蓝牙电话系统是基于蓝牙技术和现有固定电话网络的一种移动通信系统。它具有移动性、高数据传输率、高带宽和低费用等特点。首先提出一种蓝牙电话系统方案，简要介绍了它的结构和工作原理，在此基础上讨论了其越区切换问题，并提出了解决办法。     

基于CORDIC算法的高速直接数字频率合成技术的ASIC实现

文章主要分析了如何利用基于矢量旋转的CORDIC(Coordination Rotation Digital Computer)算法实现高速高精度的直接数字频率合成技术(DDS)。首先推导了CORDIC算法产生正余弦信号的实现过程，然后给出了在FPGA中设计数控振荡器(NCO)的顶层电路结构，并根据算法特点在设计中引入流水线结构设计。     

Reverse‐Conducting IGBT Using MEMS Technology on the Wafer Back Side

In this paper, we present a 600‐V reverse conducting insulated gate bipolar transistor (RC‐IGBT) for soft and hard switching applications, such as general purpose inverters. The newly developed RC‐IGBT uses the deep reactive‐ion etching trench technology without the thin wafer process technology. Therefore, a freewheeling diode (FWD) is monolithically integrated in an IGBT chip. The proposed RC‐IGBT operates as an IGBT in forward conducting mode and as an FWD in reverse conducting mode. Also, to avoid the destructive failure of the gate oxide under the surge current and abnormal conditions, a protective Zener diode is successfully integrated in the gate electrode without compromising the operation performance of the IGBT.     

Improved photovoltaic characteristics of organic cells with heterointerface layer as a hole-extraction layer inserted between ITO anode and donor layer

We have fabricated an improved organic photovoltaic (OPV) cell in which organic heterointerface layer is inserted between indium-tin-oxide (ITO) anode and copper-phthalocyanine (CuPc) donor layer in the conventional OPV cell of ITO/CuPc/fullerene (C₆₀)/bathophenanthroline (Bphen)/Al to enhance the power conversion efficiency (PCE) and fill factor (FF). The inserted ITO-buffer layer consists of electron-transporting layer (ETL) and hole-transporting layer (HTL). We have changed the ETL and HTL materials variously and also changed their layer thickness variously. It is confirmed that ETL materials with higher LUMO level than the work function of ITO give low PCE and FF. All the double layer buffers give higher PCE than a single layer buffer of TAPC. The highest PCE of 1.67% and FF of 0.57% are obtained from an ITO buffer consisted of 3 nm thick ETL of hexadecafkluoro-copper-phthalocyanine (F₁₆CuPc) and 3 nm thick HTL of 1,1-bis-(4-methyl-phenyl)-aminophenylcyclohexane (TAPC). This PCE is 1.64 times higher than PCE of the cell without ITO buffer and 2.98 times higher than PCE of the cell with single layer ITO buffer of TAPC. PCE is found to increase with increasing energy difference (ΔE) between the HOMO level of HTL and LUMO level of F₁₆CuPc in a range of ΔE < 0.6 eV. From the ΔE dependence of PCE, it is suggested that electrons moved from ITO to the LUMO level of the electron-transporting F₁₆CuPc are recombined, at the F₁₆CuPc/HTL-interface, with holes transported from CuPc to the HOMO level of HTL in the double layer ITO buffer ETL, leading to efficient extraction of holes photo-generated in CuPc donor layer.     

Enhanced carrier mobility and photon-harvesting property by introducing Au nano-particles in bulk heterojunction photovoltaic cells

In this study, polymer solar cells (PSCs) doped with Au nanoparticles (Au NPs) were successfully fabricated to maximize the photon-harvesting properties on the photoactive layer. In addition, a conductivity-enhanced hybrid buffer layer was introduced to improve the photon absorption properties and effectively separate the generated charges by adding Au NPs and dimethylsulfoxide (DMSO) to the PH 500 as a buffer layer. The PSC performance was optimized with a 88% improvement over the conventional PSCs (photoactive area: 225 mm², power conversion efficiency (PCE): 3.2%) by the introduction to the buffer layer of Au NPs and DMSO at 10 wt% and 1.0 wt%, respectively, and with 15 wt% Au NP doping in the photoactive layer. The internal resistance was decreased due to the increased photocurrent caused by the localized surface plasmon resonance (LSPR) effect of the Au NPs in the photoactive layer and by the improvement of carrier mobility induced by the DMSO doping of the buffer layer. As a result, the series resistance (R_S) deceased from 42.3 to 19.7 Ω cm² while the shunt resistance (R_SH) increased from 339 to 487 Ω cm².