Throughput analysis for multicast switches with multiple input queues

This letter analyzes the saturated throughput for multicast switches with multiple input queues per input port. Under the assumptions of a Poisson uniform traffic model and random packet scheduling policy, we derive the multicast switch saturated throughput under different fanouts. To verify the analysis, extensive simulations are conducted with different switch sizes and fanouts. It is shown that the theoretical analysis and the simulation results have a discrepancy less than 1.9%. Results from this letter can be used as a guidance to design the optimal queuing for multicast switches.     

基于SOI的双极场效应晶体管

在分析了双极型晶体管和场效应晶体管各自的特点和不足后，介绍了一种既具有双极型晶体管较大电流容量和功率输出，又具有场效应晶体管高输入阻抗的电子器件——双极MOS场效应晶体管(BJMOSFET)，同时指出体硅BJMOSFET的阳极扩散区与衬底之间存在较大的漏电流，可产生较大的寄生效应。提出了一种新型固体电子器件——基于SOI的BJMOSFET，分析了其工作原理j与体硅BJMOSFET比较，由于SOI技术完整的介质隔离避免了体硅器件中存在的大部分寄生效应，使基于SOI的BJMOSFET在体效应、热载流子效应、寄生电容、短沟道效应和闩锁效应等方面具有更优良的特性。     

聚甲亚胺改性尼龙6复合材料的等温结晶动力学

采用差示扫描量热法（DSC）对聚甲亚胺（PAM）/尼龙6复合材料等温结晶过程进行了研究。结果表明，PAM的加入使得基体的结晶速率增大，尤其是当含量为5%时，半结晶期明显减少。研究还发现，该体系的等温结晶过程完全可以用Avrami方程来描述，各试样的Avrami指数均在2-3之间，表明Avrami指数，球晶生长方式基本不受聚甲亚胺加入的影响。基体中原位形成的聚甲胺微纤起到了诱导结晶的作用，使得基体的结晶速率加快，但随着微纤含量的增加，由于分散性能变差而使得诱导结晶的能力减弱，表现为结晶速率又有所降低。     

可拓知识空间和可拓知识网格模型(Ⅱ):可拓知识网格

第1部分中已介绍了可拓知识空间定义和相关操作，以及可拓知识空间关联函数计算方法。这一部分进一步建立可拓知识空间语义网、可拓知识网格和可拓知识网格服务，并给出实例和相关的分析讨论。     

医学超声图像处理系统

超声图像诊断是与X线CT、同位素扫描、核磁共振等一样重要的医学图像诊断手段。根据肝脏超声图像进行脂肪肝的诊断,是病变确诊的主要方法。但是,与CT和核磁共振等医学图像相比,超声图像的图像质量较差,目前的诊断以定性为主,受主观因素影响较大。以图像分割为基础,以VC语言为工具,建立了超声图像处理系统,对超声图像进行了二值化处理,并对处理结果进行了量化,为诊断提供了依据。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

磁浸没透镜的宽束曲轴像差分析的微分代数方法研究

微分代数是计算机数值分析领域中的一个非常有效的方法,可以实现任意高阶微分的准确计算.本文根据微分代数方法的基本原理,将其引入到磁浸没透镜的宽束曲轴像差的分析计算中,得到了任意阶曲轴像差的微分代数表达式.文中针对轴上磁场具有某种解析表达式的一个实际的磁浸没透镜系统,利用微分代数的曲轴像差分析方法,计算了它的曲轴像差,并给出了全部二阶和三阶几何像差的分布图形.     

垂直磁记录介质薄膜研制的新途径(英文)

本文阐述了铝氧化电沉积法获得磁记录材料的基本原理,研究了铝交流氧化膜中沉积磁性金属及其合金制备垂直磁记录薄膜的新途径,建立了铝交流氧化电沉积法,探讨了氧化膜的结构和磁特性的关系。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.