Properties of a poly-Si/GaAs layered structure on Si for Si heterojunction bipolar transistor

The properties of poly-Si/GaAs layered films on Si for use in wide bandgap emitters for Si heterojunction bipolar transistors (Si-HBTs), were studied. A smooth GaAs film surface grown on Si was obtained at low temperature (200° C) from the initial stage of growth. The x-ray diffraction (XRD) results indicated that strong GaAs orientation (111) was obtained for the poly-Si/GaAs/Si-substrate layered structure after annealing at 800° C for 20 sec. Secondary ion mass spectroscopy (SIMS) profiles indicated that impurity diffusion from the GaAs layer into the p-type Si substrate was negligible at 800° C. The electrical characteristics forn-poly-Si/n-GaAs/p-Si-substrate heterojunction diodes were also investigated.     

The effects of di-D-fructofuranose-1,2':2,3'-dianhydride (DFA III) administration on human intestinal microbiota

Di-D-fructofuranose-1,2':2,3'-dianhydride (DFA III) was shown to enhance Ca absorption in rat and human intestine. The effects of DFA III administration (9 g per day for 4 weeks that corresponded to 3-fold the optimal dosage of DFA III) on human intestinal microbiota were studied using denaturing gradient gel electrophoresis (DGGE). The major groups of human intestinal microbiota reported previously: the Bacteroides, the Clostridium coccoides group (Clostridium cluster XIVa), the Clostridium leptum group (Clostridium cluster IV), and the Bifidobacterium group were detected. The similarity of 30 DGGE profiles based on the V3 region (before and after administration to the 15 subjects) of the 16S rDNA were calculated using Pearson's correlation based on numbers, positions and intensity of bands, and then a dendrogram of DGGE profiles was constructed by the unweighted pair group method using arithmetic average (UPGMA) clustering method. By these analyses, no difference in DGGE profiles after DFA III administration was observed in healthy subjects, while two subjects with chronic constipation showed different profiles, namely on numbers, positions and the intensity of some bands. Their stools were softer and stool frequencies increased and they obtained relief from constipation.     

Selective elimination of lead(II) ions by alginate/polyurethane composite foams

A new type of adsorbent which is capable of selectively adsorbing lead(II) ions (Pb(2+)) was developed. The adsorbent was generated by reaction of sodium alginate with NB-9000B, a polyisocyanate type of prepolymer of polyurethane. The adsorbent was a hydrophilic and flexible alginate/polyurethane composite foam (ALG/PUCF) with the alginate chemically immobilized in the cell walls of the foam. Acid-base titration was used to quantify the concentration of carboxyl groups, which are present on the alginate molecules of the ALG/PUCF, functioning as the essential sites for binding Pb(2+). For the optimized ALG/PUCF, the carboxyl was found to be 38.2+/-1.2mumol/g of dry weight. The capacity for adsorbing Pb(2+) ions in 1.0g of dry weight of the optimized ALG/PUCF was found to be 16.0+/-2.1mumol, indicating that ion exchange was the essential mechanism for adsorbing Pb(2+) ions. The adsorption capacity was found to be highly sensitive to the pH of the sample solution; lower pH (<3) significantly decreased the adsorption. Competing ions such as Mg(2+), Ca(2+), and Cd(2+) also caused a decrease in selectivity and capacity for Pb(2+) adsorption, although the effect was less pronounced than the effect of pH. The ALG/PUCF is highly stable, flexible and easy to use. ALG/PUCF is also reusable after regeneration with ethylenediamine-N,N,N',N'-tetraacetic acid, disodium salt (EDTA-2Na). Due to these features, this adsorbent may be highly useful for elimination of Pb(2+) ions from contaminated water.     

Characterization of GaN and In x Ga1−x N films grown by MOCVD and MBE on free-standing GaN templates and quantum well structures

Structural and optical studies have been performed on GaN, InGaN layers, In_0.08Ga_0.92N/GaN heterostructures, In_0.08Ga_0.92N/In_0.02Ga_0.98N single and multiquantum wells grown by metal organic chemical vapor deposition (MOCVD) and GaN by molecular beam epitaxy (MBE) on GaN templates by using transmission electron microscopy (TEM), X-ray diffraction (XRD), and photoluminescence (PL). The layers are found to be high quality with low defect density, on the order of 10⁶ cm^?2, which are mainly related to the threading dislocations originating/propagating from the hydride vapor phase epitaxy (HVPE) GaN template. The interface between the layers and substrate could not be detected by TEM and was therefore deemed to be of high quality. Convergent beam electron diffraction studies revealed that the polarity of the films is Ga-polarity, which is the same as that of the substrate. A dual structure with different compositions and having thicknesses of 10 and 25 nm was observed in InGaN layers grown on GaN in one of the heterostructure samples. The full width at half maximum (FWHM) of the XRD rocking curves of (0 0 0 2) for heterostructures and quantum wells were found to be in the range of 15–28 arcmin for a slit width of 2 mm. PL studies on GaN layers grown by MBE and MOCVD on GaN templates are reasonably similar. The PL spectra from all the MBE and MOCVD epilayers and the substrate contain a plethora of sharp peaks related to excitonic transitions. With the presence of donor-bound exciton peaks and their associated two-electron satellites, the binding energies of two distinct shallow donors (28.8 and 32.6 meV), which are attributed to Si and O, respectively, were determined. PL measurements revealed that the FWHM of the main donor bound exciton peak increased from 0.6 to 2.9 meV but no change in peak position (3.472 eV) was observed in GaN when doping with Si (5×10¹⁷ cm^?3). However, the intensities of the yellow band and the shallow donor–acceptor pair band increased 10 times as compared to that in the undoped GaN samples. In the case of InGaN/GaN heterostructures, a similar trend was observed when compared to the doped samples. In the multiquantum well In_0.08Ga_0.92N/In_0.02Ga_0.98N heterostructures, the activation energy of the exciton emission, found to be 18 meV, was the lowest in the samples studied. The peak at 3.02 eV related to the InGaN was strongly pronounced in the In_0.08Ga_0.92N/In_0.02Ga_0.98N multiquantum well structure. In the In_0.08Ga_0.92N/In_0.02Ga_0.98N quantum well structures, the change in peak position with variation of temperature from 15 to 300 K in PL spectra is “S”-shaped. The cause for the “S” shape, i.e., a red–blue–red shift, is discussed.     

Nanometer resolution stress measurement of the Si gate using illumination-collection-type scanning near-field Raman spectroscopy with a completely metal-inside-coated pyramidal probe

We have proposed an illumination-collection-type scanning near-field Raman spectroscopy (SNRS) with a completely gold metal-inside-coated (MIC) pyramidal probe without an optical aperture in order to detect the Raman spectra of fine Si devices for local stress measurements. The gold MIC pyramidal probe has been studied to act as a plasmon resonance near-field optical probe with high power using a finite differential time domain (FDTD) simulation and the prototyped SNRS. In the simulation, the propagated optical power can be made available for SNRS. In the experiments, it is clear that the prototyped SNRS enhanced the Si Raman peak signal by plasmon resonance and could measure the Si Raman peak shift by line scanning the Si gate region and the Si active layer. Furthermore, compressive and tensile stresses localized around the Si gate were demonstrated by the Si Raman peak shift with a resolution of about 10 nm. It is clarified that the proposed SNRS has the possibility of detecting the Raman spectra of a local area.     

Spectrum-efficient and scalable elastic optical path network: architecture, benefits, and enabling technologies

The sustained growth of data traffic volume calls for an introduction of an efficient and scalable transport platform for links of 100 Gb/s and beyond in the future optical network. In this article, after briefly reviewing the existing major technology options, we propose a novel, spectrum- efficient, and scalable optical transport network architecture called SLICE. The SLICE architecture enables sub-wavelength, superwavelength, and multiple-rate data traffic accommodation in a highly spectrum-efficient manner, thereby providing a fractional bandwidth service. Dynamic bandwidth variation of elastic optical paths provides network operators with new business opportunities offering cost-effective and highly available connectivity services through time-dependent bandwidth sharing, energy-efficient network operation, and highly survivable restoration with bandwidth squeezing. We also discuss an optical orthogonal frequency-division multiplexing-based flexible-rate transponder and a bandwidth-variable wavelength cross-connect as the enabling technologies of SLICE concept. Finally, we present the performance evaluation and technical challenges that arise in this new network architecture.     

A real-time PCR method targeting a gene sequence encoding 16S rRNA processing protein,rimM, for detection and enumeration of Streptococcus thermophilus in dairy products

A real-time PCR method targeting a gene sequence encoding 16S rRNA processing protein, rimM, for specific detection of Streptococcus thermophilus was developed. The designed real-time PCR primers and probe were specific for S. thermophilus JCM20026, LMG6896, LMG18311, OJT101, OJT102 but not Enteroccocus spp., Lactococcus lactis subsp. lactis, and Streptococcus salivarius which are phylogenetically closely related to S. thermophilus and are difficult to identify using culture-based methods. The linear range of the developed real-time PCR method was from 2.7 to 8.6 log CFU ml^?1 with an amplification efficiency of 96%. Minor differences (about 0.4 log CFU ml^?1) were observed between counts of S. thermophilus obtained by culture and real-time PCR method in plain yoghurt and yoghurt containing fruits. Therefore, the developed real-time PCR method could be of potential application in specific detection and accurate enumeration of S. thermophilus in a wide range of dairy products.     

An autopsy case of cytokeratin 7-positive minute adenocarcinoma of the lung with systemic metastases

We describe a 60-year-old woman with leg pain. Although metastatic bone tumor and atypical cells mimicking signet-ring cells in the bone marrow picture were observed, systemic survey revealed no primary lesion. The patient died two months after admission from systemic progress of the disease. Autopsy revealed a small focus of adenocarcinoma within the right upper lobe of the lung and systemic metastases without any particular changes in the gastrointestinal tract. The tumor cells of the lung were diffusely positive for cytokeratin 7, whereas cytokeratin 20 immunoreactivity was weak and focal, and that supported the lung origin of the present tumor. Moreover, the tumor cells in the bone marrow showed a similar pattern in immunoreactivity. These findings suggest that cytokeratin 7 and cytokeratin 20 immunoreactivity is helpful for the premortem diagnosis of the metastatic tumor of unknown origin.     

Effect of Pore–Grain-Boundary Interactions on Discontinuous Grain Growth

Pore behavior as influenced by migration of an abnormal grain boundary was studied. The pore behavior during the discontinuous growth of hot-pressed spinel (MgAl₂O₄) — whether the pore can move attached to the grain boundary — is particularly governed by the pore size and the matrix grain size. These phenomena can be understood from the interaction between the pore and the abnormal grain boundary.