EDGE网络的规划及资源配置研究

本文在现有网络分析的基础上,进行了EDGE数据网的规划,并通过仿真对规划结果进行了验证,最后对语音和数据网络的资源配置方法进行了研究,提出了相应的资源配置方法。     

Leveraging partially overlapping channels for intra-and inter-coalition communication in cooperative UAV swarms

Cooperative UAV swarms typically adopt coalition-based network structures for executing tasks more efficiently.Coalition heads in such networks need to do both ...     

Internal OH? induced cascade quenching of upconversion luminescence in NaYF4:Yb/Er nanocrystals

Internal hydroxyl impurity is known as one of the main detrimental factors affecting the upconversion (UC) efficiency of upconversion luminescence (UCL) nanomat...     

一种基于kNN的控制关系分析方法

控制关系(dominant relationship)在Skyline计算、Rank-Aware查询处理以及市场分析等方面有着非常广泛的应用,自提出以来受到越来越多的关注.对于一个N维的数据集,其中的一个点p能控制另一个点q,当且仅当p在各个维上的值都不比q差,而且至少在一个维上的值比q要好.在最近的研究工作中指出,基于以上定义的控制关系可以用于市场分析中的产品定位问题,对于一个产品而言,控制能力越强(能控制的顾客越多)该新产品就越好.但是考虑到一个产品要在各个属性上都有非常好的表现是非常困难的,放松了控制关系的定义,认为当一个产品在各个属性上的取值都与顾客的偏好"近似"时,该产品就能控制这个顾客(即能满足该顾客的要求).另外此前的工作在分析产品的市场定位时没有考虑竞争对手的影响,导致分析的结果不能用于实际应用.基于以上考虑,定义了一种新的基于kNN的控制关系,并将其用于市场竞争且资源受限情况下的产品分析和市场定位问题.在R*树的基础上,提出了一种新的控制关系分析算法.实验验证了所提出的方法是有效的.     

110kV电缆竣工试验引发事故的分析

通过对一起110kV XLPE电缆线路竣工试验所引发的事故进行分析,提出110kV电缆交流试验应该注意的一些问题,以期引起同行的借鉴和参考。     

Modeling and performance analysis of a novel M-shaped piezoelectric energy harvester employing magnets

Journal of Mechanical Science and Technology - Piezoelectric energy harvesters convert the vibration energy of a mechanical system into the electrical energy. Among them, cantilever type is the...     

植入关节内压电陶瓷供能研究

为了研究压电陶瓷在植入人工关节内压力下能量产生特性,该文从理论上分析了坚硬锆钛酸铅(PZT)陶瓷元件的能量产生特性和等效电路,并基于实验结果利用非线性拟和算法得到其等效电路的参数拟和值。1个与4个PZT元件的仿真结果和实验结果非常吻合,从而验证了等效电路的参数拟和值的正确性及PZT元件的供电特性(约1.2 mW)。最后描述了利用压电陶瓷供电的电源电路设计和仿真结果,证明了PZT的能量能转换为电路稳定可用电源。     

Characteristics of MSM photodetectors with trench electrodes onp-type Si wafer

U-grooved metal-semiconductor-metal photodetectors (UMSM-PD's) having various trench depths of interdigitated electrodes and an intrinsic hydrogenated amorphous silicon (i-a-Si:H) to c-Si heterojunction have been fabricated successfully on a p-type [100] Si wafer. The U-grooved structures on c-Si were achieved with a simple orientation-dependent etching (ODE) process. Some important characteristics of the obtained UMSM-PDs are presented and discussed. An UMSM-PD with a 70 nm i-a-Si:H overlayer, 1.45 μm-deep recessed electrodes, and 3 μm finger width and spacing, had a full width at half maximum (FWHM) of 50.6 ps and a full-time of 132 ps for its temporal response under a bias of 15 V. The significant improvements of transient response for UMSM-PD, as compared to the conventional one, were attributed to the trench electrodes resulted in a stronger lateral electric field in the light absorption region of photodetector. At a bias of 20 V, this UMSM-PD had a responsivity of 0.25 A/W as measured with an 0.83-μm incident semiconductor laser, a high photo/dark current ratio about 2000, and an internal quantum efficiency of 36%. This high photo/dark current ratio would be due to the additional i-a-Si:H overlayer on Si wafer. These mentioned performances were much better than those of the conventional Si-based planar MSM-PD     

Atomic-layer-deposited Al2O3 and HfO2 on GaN: A comparative study on interfaces and electrical characteristics

Al₂O₃, HfO₂, and composite HfO₂/Al₂O₃ films were deposited on n-type GaN using atomic layer deposition (ALD). The interfacial layer of GaON and HfON was observed between HfO₂ and GaN, whereas the absence of an interfacial layer at Al₂O₃/GaN was confirmed using X-ray photoelectron spectroscopy and transmission electron microscopy. The dielectric constants of Al₂O₃, HfO₂, and composite HfO₂/Al₂O₃ calculated from the C-V measurement are 9, 16.5, and 13.8, respectively. The Al₂O₃ employed as a template in the composite structure has suppressed the interfacial layer formation during the subsequent ALD-HfO₂ and effectively reduced the gate leakage current. While the dielectric constant of the composite HfO₂/Al₂O₃ film is lower than that of HfO₂, the composite structure provides sharp oxide/GaN interface without interfacial layer, leading to better electrical properties.     

合成射流激励影响扩散燃烧NOx生成的实验研究

对合成射流激励助燃风影响NOx生成进行了实验研究,主要考察了合成射流频率、幅值对燃烧器内掺混区时均速度、NOx含量、温度等参数分布的影响。实验结果表明,加入适当频率的合成射流激励助燃风,能够增强径向、周向速度幅值,改善天然气与助燃风的掺混,降低“热点”温度和NOx生成量（较无激励时最多降低约14％）,这有益于降低天然气燃烧造成的大气污染。