太赫兹通信技术的研究与展望

太赫兹通信是一个极具应用前景的技术,太赫兹波有非常宽的还没分配的频带,并且具有传输速率高、方向性好、安全性高、散射小及穿透性好等许多特性.发展太赫兹通信技术已成为各发达国家研究的热点.该文分析了国内外太赫兹通信的研究情况;以太赫兹通信系统的整体框架,全面地介绍和分析了太赫兹通信的一些关键技术和最新研究成果;同时,对太赫兹的技术发展趋势和应用前景做了展望,提出了太赫兹技术的发展战略.     

Robust event correlation scheme for fault identification in communication networks

The complexity of communication networks and the amount of information transferred in these networks have made the management of such networks increasingly difficult. Since faults are inevitable, quick detection, identification, and recovery are crucial to make the systems more robust and their operation more reliable. This paper proposes a novel event correlation scheme for fault identification in communication networks. This scheme is based on the algebraic operations of sets. The causality graph model is used to describe the cause‐and‐effect relationships between network events. For each disorder, and each manifestation, a unique prime number is assigned. The use of the greatest common devisor (GCD) makes the correlation process simple and fast. A simulation model is developed to verify the effectiveness and efficiency of the proposed scheme. From simulation results, we notice that this scheme not only identifies multiple disorders at one time but also is insensitive to noise. The time complexity of the correlation process is close to a function of n, where n is the number of observed manifestations, with order O(n²); therefore, the on‐line fault identification is easy to achieve. Copyright © 1999 John Wiley & Sons, Ltd.     

Linearity improvement of cascode low-noise amplifiers using double DS method with a tuned inductor

We propose a highly linear low-noise amplifier (LNA) using the double derivative superposition method with a tuned inductor. This topology has an auxiliary common gate stage of the cascode amplifier to cancel each third-order intermodulation distortion (IMD3) component and can provide a high third-order input intercept point (IIP3) for the 5.25 GHz frequency band. From the simulation results using the TSMC 0.18 μm RF CMOS process, the IIP3 in the proposed cascode LNAs can be improved by 9 dB, compared with the conventional derivative superposition method. The proposed LNA achieves an IIP3 of + 15 dBm with a gain of 10.5 dB, a noise figure of 2.4 dB, and a power consumption of 6 mA at 1.5 V.     

相移数字散斑干涉术测量振动模态

数字散斑干涉技术是一种非接触，全场测试的光学测试方法。用数字散斑干涉术时间平均法测得的物体表面稳态振动，可描述为受高频分量调制的零阶Ｂｅｓｓｅｌ函数。文章提供一种在数字散斑时间平均法测振中使用的相移方案，以消除条纹图中的背景分量，使条纹仅与振幅有关，阐述了此方案的原理，并给出实验的结构和结果。     

基于TMS320C54x DSKplus的实时TCM语音编解码算法的实现

描述了基于TMS320C54x数字信号处理器的TCM语音压缩编码系统。该系统是在TMS320C54xDSP入门套件（DSK,DSP Starter Kit）板上实现,充分发挥了芯片的专用硬件逻辑、专业化的指令以及板上TLC320AC01模拟接口语音处理系统。有效而快速地完成了TCM语音压缩系统的模拟,并给出相应的实验结果。     

X波段四路合成氮化镓功率放大器

本文利用自主研制的SiC 衬底的,栅宽为2.5mm的AlGaN/GaN HEMT器件,设计完成了X波段氮化镓合成固态放大器模块。模块由AlGaN/GaN HEMT器件,Wilkinson功率合成/分配器,偏置电路和微带匹配电路构成。为了使放大器稳定,在每一路放大器的输入端和输出端加入了RC 稳定网络,在栅极和直流输入之间加上稳定电阻,并且利用3/4 λ 枝接的威尔金森功率合成/分配器,从而有效消除其自激和低频串扰问题。在连续波条件下(直流偏置电压为Vds=27V,Vgs=-4.0V),放大器在8GHz频率下线性增益为5dB,最大效率为17.9%,输出功率最大可为42.93dBm,此时放大器增益压缩为3dB。四路合成放大器的合成效率是67.5%。通过分析,发现了放大器合成效率的下降是由每路放大器特性的不一致、功率合成网络的损耗以及电路制造误差所造成。     

Rational Design of Charge‐Neutral,Near‐Infrared‐Emitting Osmium(II) Complexes and OLED Fabrication

A new series of charge neutral Os(II) isoquinolyl triazolate complexes ( 1 – 4 ) with both trans and cis arrangement of phosphine donors are synthesized, and their structural, electrochemical and photophysical properties are established. In sharp contrast to the cis‐arranged complexes 2 – 4 , the trans derivative 1 , which shows a planar arrangement of chromophoric N‐substituted chelates, offers the most effective extended π‐delocalization and hence the lowest excited state energy gap. These complexes exhibit phosphorescence with peak wavelengths ranging from 692–805 nm in degassed CH₂Cl₂ at room temperature. Near‐infrared (NIR)‐emitting electroluminescent devices employing 6 wt % of 1 (or 4 ) doped in Alq₃ host material are successfully fabricated. The devices incorporating 1 as NIR phosphor exhibit fairly intense emission with a peak wavelength at 814 nm. Forward radiant emittance reaches as high as 65.02 µW cm^?2, and a peak EQE of ～1.5% with devices employing Alq₃, TPBi and/or TAZ as electron‐transporting/exciton‐blocking layers. Upon switching to phosphor 4 , the electroluminescence blue shifts to 718 nm, while the maximum EQE and radiance increase to 2.7% and 93.26 (μW cm^?2) respectively. Their performances are optimized upon using TAZ as the electron transporting and exciton‐blocking material. The OLEDs characterized represent the only NIR‐emitting devices fabricated using charge‐neutral and volatile Os(II) phosphors via thermal vacuum deposition.     

Effects of Interfacial Dielectric Layers on the Electrical Performance of Top‐Gate In‐Ga‐Zn‐Oxide Thin‐Film Transistors

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top‐gate In‐Ga‐Zn‐oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below 200°C, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as Si₃N₄ and Al₂O₃, the electrical properties are analyzed. After post‐annealing at 200°C for 1 hour in an O₂ ambient, the sub‐threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative‐bias stress tests on TFTs with a Si3N4 IDL, the degradation sources are closely related to unstable bond states, such as Si‐based broken bonds and hydrogen‐based bonds. From constant‐current stress tests of Id = 3 µA, an IGZO‐TFT with heat‐treated Si₃N₄ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge‐injection and electron‐trapping behavior.     

氮化镓器件非线性特性表征

对100um和1mm碳化硅衬底的氮化镓器件进行直流特性,小信号特性和大信号特性的表征。100um和1mm器件小信号特性测试结果发现,随栅长增大,由于电容寄生效应的减小,电流截止频率fT增大。从数据看出,器件可用在C波段和X波段。大信号测试包括C波段和X波段负载牵引测试和功率扫描测试。器件偏置在AB类工作点,并且选定源端阻抗,做负载牵引测试。在负载牵引园图上,最大功率阻抗点和最佳效率阻抗点可以确定。根据5.5GHz的不同栅长的器件的功率扫描结果分析器件尺寸变换效应与和大尺寸器件的自热效应密切相关。8GHz 不同漏极偏置的器件的功率扫描结果说明碳化硅衬底的氮化镓器件有好的热导率,高击穿电压和10.16W/mm 功率密度。从分析可证明碳化硅衬底的氮化镓器件是放大器设计的理想材料。     

俄罗斯轻金属工业转入市场经济阶段的科技投入与成果综述

俄罗斯铝工业在转入市场阶段为保持原有产能，在确保原料基地长远发展等方面取得了一系列的科技成果，并且近年来，俄罗斯轻金属工业所取得的这些重大成果是使它在激烈的全球竞争中保持了稳定而有力的地位。