Pixel‐Structured Scintillator with Polymeric Microstructures for X‐Ray Image Sensors

We introduce a pixel‐structured scintillator realized on a flexible polymeric substrate and demonstrate its feasibility as an X‐ray converter when it is coupled to photosensitive elements. The sample was prepared by filling Gd₂O₂S:Tb scintillation material into a square‐pore‐shape cavity array fabricated with polyethylene. For comparison, a sample with the conventional continuous geometry was also prepared. Although the pixelated geometry showed X‐ray sensitivity of about 58% compared with the conventional geometry, the resolving power was improved by about 70% above a spatial frequency of 3 mm^?1. The spatial frequency at 10% of the modulation‐transfer function was about 6 mm^?1.     

Consideration of temperature and current stress testing on flip chip solder interconnects

This work discusses the experimental set-up and data interpretation for high temperature and current stress tests of flip chip solder joints using the four-point Kelvin measurement technique. The single solder joint resistance responses are measured at four different four-point Kelvin structure locations in a flip chip package. Various temperatures (i.e., 125–165 °C) and electric current (i.e., 0.6–1.0 A) test conditions are applied to investigate the solder joint resistance degradation behavior and its failure processes. Failure criterion of 20% and 50% joint resistance increases, corresponding to solder and interfacial voiding, are employed to evaluate the solder joint electromigration reliability. The absolute resistance value is substantially affected by the geometrical layout of the metal lines in the four-point Kelvin structure, and this is confirmed by finite element simulation.Different current flow directions and strengths yielded different joint resistance responses. The anode joint, where electrons flow from the die to the substrate, usually measured an earlier resistance increase than the cathode joint, where electrons flow in the opposite direction. The change in measured joint resistances can be related to solder and interfacial voiding in the solder joint except for ±1 A current load, where resistance drop mainly attributed to the broken substrate Cu metallization as a result of “hot-spot” phenomenon. The solder joint temperature increases above the oven ambient temperature by ～25 °C, ～40 °C and ～65 °C for 0.6 A, 0.8 A and 1.0 A stress current, respectively. It is found that two-parameter log-normal distribution gives a better lifetime data fitting than the two-parameter Weibull distribution. Regardless of failure criterion used, the anode joint test cells usually calculated a shorter solder joint mean life with a lower standard variation of 0.3–0.6, as compared to the cathode joint test cells with a higher standard variation of 0.8–1.2. For a typical flip chip solder joint construction, electromigration reliability is mainly determined by the under bump metallization consumption and dissolution, with intermetallic compound formation near the die side of an anode joint.     

Sensitivity of trigate MOSFETs to random dopant induced threshold voltage fluctuations

In this paper, we investigate random doping fluctuation effects in trigate SOI MOSFETs by solving the three-dimensional (3D) Poisson, drift-diffusion and continuity equations numerically. A single doping impurity atom is introduced in the undoped channel region of the device and the resulting shift of threshold voltage is measured from the simulated I–V characteristics. This enables the derivation of the threshold voltage shift (ΔV_TH) for any arbitrary location of the doping atom in the transistor. Based on an analysis of a sub-20 nm trigate MOSFET device, we find that the typical variation of V_TH per doping atom is a few tens of mV. Inversion-mode (IM) trigate devices are more sensitive to the doping fluctuation effects than accumulation-mode (AM) devices. The threshold voltage shift arising from doping fluctuations is maximum when the doping atom is near the center of the channel region, which means the original SOI film doping, the random contamination effects or any other impurity doping in the channel region is more important than atoms introduced in the channel by the S/D implantation process for sub-20 nm transistors.     

Cracking energy estimation of ultra low-k package using novel prediction approach combined with global-local modeling technique

Interfacial crack/delamination, due to the presence of dissimilar material systems, is one of the major concerns of thermo-mechanical reliability for the development of next node technology in integrated circuits (IC) devices. The cracking energy results from many back end of line (BEOL) and packaging processes at various temperature differences is prone to drive the crack advance. To investigate the sensitivity of crack propagation in low-k dielectric materials, a robust estimation of J-integral approach combined with a rectangular path of integral contour is performed using finite element analysis (FEA). By means of the verification of 4-point bending test (4-PBT), excellent agreements are obtained as compared with the experimental data. Moreover, a multiscale modeling technique is proposed to resolve the difficulty of model construction as from bridge device level to packaging level. The sub-modeling procedures developed specifically for the impact prediction of interfacial crack in complicated Cu/low-k interconnects. The analytic results indicate the foregoing methodology is valuable to forecast the physical behavior and reliability of advanced IC devices in the nano scaled size. On the basis of the presented results in this research, an approximated criterion for determining the dimensions of sub-model is suggested and demonstrated as well.     

Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy

It is well known that the large lattice mismatch (>14%) associated with CdTe/Si, CdTe/Ge, and CdTe/GaAs composite substrates, is a great contributor to large dislocation densities and other defects that limit the performance of HgCdTe-based infrared detectors. Though thermal expansion mismatch is another possible contributor to material defects, little work has been done towards documenting and understanding its effects in these systems. Here, we perform studies to determine the relative contributions of lattice and thermal mismatch to CdTe film characteristics, including dislocation density and residual stress. Unannealed and thermally cycled films are characterized using x-ray diffraction, defect decoration, and Nomarski and transmission electron microscopy. For CdTe/Si, the residual stress is consistently observed to be tensile, while for CdTe/Ge and CdTe/GaAs, a compressive residual film stress is measured. We show based on theoretically predicted stress levels that the experimental measurements imply the dominance of thermal mismatch in the residual stress characteristics.     

Structural Analysis of CdTe Hetero-epitaxy on (211) Si

X-ray diffraction full-width at half-maximum (XRD FWHM), reflection high-energy electron diffraction (RHEED), and atomic force microscopy (AFM) indicate a mosaic structure for molecular-beam epitaxy (MBE) (211)B CdTe/Si. AFM measurements indicate long, thin, small-angle-disoriented grains for CdTe/Si epilayers. These disoriented grains are ~1 μm in the [] direction and are ~40 nm in the [] direction. The RHEED pattern in the [] direction depicts nearly ideal single-crystal periodicity. The RHEED pattern in the [] direction is indicative of small-angle-disoriented crystalline grains. Scanning electron microscopy (SEM), AFM, and XRD measurements all indicate an approximate factor of 10 increase in the Everson etch pit density (EPD) over standard Nomarski microscopy Everson EPD determination.     

A traffic grooming problem of SONET-WDM rings

In this paper, we present a traffic grooming problem of the SONET-WDM ring. The objective is to minimize the total cost of optical add-drop multiplexers (OADMs) and inter-ring hub equipment, while satisfying intra-ring and inter-ring capacities. We develop integer programming (IP) formulations for the problem and devise some reformulations for enhancing the mathematical representation of the proposed IP model. By investigating the polyhedral structure of the problem, we develop some valid inequalities that provide a tight lower bound for the problem. Dealing with the inherent computational complexity of the problem, we also devise an effective tabu search procedure for finding a feasible solution of good quality within reasonable computation time. Computational results are provided to demonstrate the relative strength of the proposed formulations, and to reveal the efficacy of the lower and upper bound procedures for solving the problem.

Wavelet-based low-delay ECG compression algorithm for continuous ECG transmission.

The delay performance of compression algorithms is particularly important when time-critical data transmission is required. In this paper, we propose a wavelet-based electrocardiogram (ECG) compression algorithm with a low delay property for instantaneous, continuous ECG transmission suitable for telecardiology applications over a wireless network. The proposed algorithm reduces the frame size as much as possible to achieve a low delay, while maintaining reconstructed signal quality. To attain both low delay and high quality, it employs waveform partitioning, adaptive frame size adjustment, wavelet compression, flexible bit allocation, and header compression. The performances of the proposed algorithm in terms of reconstructed signal quality, processing delay, and error resilience were evaluated using the Massachusetts Institute of Technology University and Beth Israel Hospital (MIT-BIH) and Creighton University Ventricular Tachyarrhythmia (CU) databases and a code division multiple access-based simulation model with mobile channel noise.     

Voice low tone to high tone ratio: a potential quantitative index for vowel [a:] and its nasalization

Hypernasality is associated with various diseases and interferes with speech intelligibility. A recently developed quantitative index called voice low tone to high tone ratio (VLHR) was used to estimate nasalization. The voice spectrum is divided into low-frequency power (LFP) and high-frequency power (HFP) by a specific cutoff frequency (600 Hz). VLHR is defined as the division of LFP into HFP and is expressed in decibels. Voice signals of the sustained vowel [a :] and its nasalization in eight subjects with hypernasality were collected for analysis of nasalance and VLHR. The correlation of VLHR with nasalance scores was significant (r = 0.76, p < 0.01), and so was the correlation between VLHR and perceptual hypernasality scores (r = 0.80, p < 0.01). Simultaneous recordings of nasal airflow temperature with a thermistor and voice signals in another 8 healthy subjects showed a significant correlation between temperature rate of nasal airflow and VLHR (r = 0.76, p < 0.01), as well. We conclude that VLHR may become a potential quantitative index of hypernasal speech and can be applied in either basic or clinical studies.     

Compact Partial$H$-Plane Filters

In this paper, three types of partial H-plane filters, having advantages of compact, low cost, and mass-producible properties, are presented as compact waveguide filters, which are implemented by partial H-plane waveguide. Two types of partial H-plane filters have the same frequency responses as those of conventional E- and H-plane filters, respectively, while their cross sections are one-quarter. To further reduce the length, the last type of partial H-plane filters is designed by using quarter-wavelength resonators. The length of this filter is shorter by 29.2% than that of the conventional E-plane filter. In addition, it has a superior spurious frequency response