P-MOSFET's with ultra-shallow solid-phase-diffused drain structureproduced by diffusion from BSG gate-sidewall

A p-MOSFET structure with solid-phase diffused drain (SPDD) is proposed for future 0.1-μm and sub-0.1-μm devices. Highly doped ultrashallow p⁺ source and drain junctions have been obtained by solid-phase diffusion from a highly doped borosilicate glass (BSG) sidewall. The resulting shallow, high-concentration drain profile significantly improves short channel effects without increasing parasitic resistance. At the same time, an in situ highly-boron-doped LPCVD polysilicon gate is introduced to prevent the transconductance degradation which arises in ultrasmall p-MOSFETs with lower process temperature as a result of depletion formation in the p⁺-polysilicon gate. Excellent electrical characteristics and good hot-carrier reliability are achieved     

Scanning and transmission electron microscopic studies on the upper and lower surfaces of the frog skin epidermal cells.

We examined the fine structure of the upper and lower surfaces of stratified squamous epithelial cells in the skin of frogs (Hyla japonica). SEM revealed the upper surface of superficial cells covered with ramified microridges (type 3). The width of the microridges was 0.20-0.24 microns. Microridges found at the cell boundary were about 0.30 microns in width and a narrow furrow was seen between the two cells. The numerous oval disk-like structures (0.23 x 0.32 microns in diameter) covered the lower surface of these superficial cells. The upper surface of cells in the 2nd layer was covered with baculiform or ramified microridges (type 2 or 3). On the cell boundary, two linear microridges (0.23-0.27 microns in width) were parallelly arranged. The width of the microridges covering the upper cell surface was 0.09-0.10 microns. Microvilli-like processes with a height of 0.32-0.37 microns were interspersed among the microridges. Their tip formed an oval plane (0.23 x 0.31 microns), which corresponded to the size of the disk-like structures on the lower surface of the superficial cells. Desmosomes were observed on the tip by TEM. These findings show that the disk-like structures on the lower surface of the superficial cells are the sites of binding with the microvilli-like processes on the upper surface of the 2nd layer cells. The disk-like structures observed in the present study seem to be equivalent to the binding site on the upper surface of the surface cell layer of mammalian stratified squamous epithelium.     

Fibre transmission distance determined by eye opening degradation due to selfphase modulation and group-velocity dispersion

Numerical analysis of IM signal propagation in an optical fibre is carried out taking selfphase modulation and group-velocity dispersion into account. The transmission distance yielding a prescribed eye opening penalty, in the normal dispersion region, is shown to be inversely proportional to the square root of the signal power.<>     

DNA Computing Boosted by a Cationic Copolymer

The huge information storage capability of DNA and its ability to self‐assemble can be harnessed to enable massively parallel computing in a small space. DNA‐based logic gates are designed that rely on DNA strand displacement reactions; however, computation is slow due to time‐consuming DNA reassembly processes and prone to failure as DNA is susceptible to degradation by nucleases and under certain solution conditions. Here, it is shown that the presence of a cationic copolymer boosts the speed of DNA logic gate operations that involve multiple and parallel strand displacement reactions. Two kinds of DNA molecular operations, one based on a translator gate and one on a seesaw gate, are successfully enhanced by the copolymer without tuning of computing conditions or DNA sequences. The copolymer markedly reduces operation times from hours to minutes. Moreover, the copolymer enhances nuclease resistance.     

Fabrication and current-drive of SiGe/Si 'Micro-origami' epitaxial MEMS device on SOI substrate

A micromirror structure with SiGe/Si heteroepitaxial layer on a silicon-on-insulator (SOI) substrate using a 'Micro-origami' technique has been successfully fabricated. The micromirror is supported by two curved hinge structures. The device is driven by application of a current, and net angular displacements larger than 10/spl deg/ (static) and 30/spl deg/ (in resonance) were obtained. These values are comparable with or even larger than the reported values for other MEMS optical switches or beam scanning devices. The experimental results suggest that the movement is evoked by a thermal effect. The Micro-origami device has advantages of low operation voltage smaller than 2 V, and structural compatibility with the Si or SiGe LSIs.     

Annealing effects of a high-quality ZnTe substrate

The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate (100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EX^L and EX^U) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the Zn vapor pressures.     

Polarization-controlled single-mode VCSEL

Relative intensity noise (RIN) in a vertical-cavity surface-emitting laser (VCSEL) was greatly reduced through the use of polarization control to eliminate competition between two orthogonal polarization states by ensuring there was only one polarization state. Polarization was stable with optical feedback of up to 10%. Polarization control was achieved by inducing a small loss anisotropy in fundamental transversal mode VCSEL's. Anisotropic post structures, such as a rectangular post, an oblique post, or a zigzag-sidewall post, were found to be effective in creating loss anisotropy without serious degradation of other VCSEL characteristics such as light-output power or beam profile     

High performance of silicided silicon-sidewall source and drain (S4D) structure

A silicided silicon-sidewall source and drain (S⁴D) structure is proposed for sub-0.1-μm devices. The merit of the S⁴D structure is that the series resistance of the source and drain is significantly reduced since the silicide layer is attached very close to the gate electrode and the silicon sidewall can be doped very highly. Thus, very high drain current drive can be expected, Another advantage of this structure is that the source and drain extensions are produced by the solid-phase diffusion of boron from the highly doped silicon-sidewall. Thus, shallow extensions with very high doping can be realized. A 75-nm gate length pMOSFET fabricated with this structure is shown to exhibit excellent electrical characteristics     

Sub-100 nm space pattern replication by using a cross-sectioned X-ray mask

Ultra-fine space pattern printing by Synchrotron Radiation x-ray lithography was investigated. New types of cross-sectioned mask¹⁾ were used to overcome the difficulty of mask fabrication. As a result, feasibility to print space patterns with a width of 50 nm or less by contact printing was demonstrated. In practice, a very narrow mask-to-wafer gap setting and precise control of the x-ray irradiation angle are necessary.