Low-conductance drain (LCD) design of InAlAs/InGaAs/InP HEMT's

The concepts of the low-conductance drain (LCD) design approach for lattice-matched InAlAs/InGaAs/InP HEMTs are demonstrated for improved device performance. The tradeoff for LCD HEMT characteristics is a tapered current gain cutoff frequency f_t under high drain-to-source bias. This behavior is, in principle, due to the fact that the LCD approach increases the effective gate length of the HEMTs in exchange for reduced peak channel electric field. Two-dimensional PISCES simulation was used to optimize the improvements while simultaneously minimizing this undesirable effect for an LCD HEMT structure     

Characterization of surface-undoped In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobilitytransistors

High-performance 0.3-μm-gate-length surface-undoped In_0.52 Al_0.48As/In_0.53Ga_0.47As/InP high-electron-mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) have been characterized and compared with a surface-doped structure. At 18 GHz, the surface-undoped HEMT has achieved a maximum stable gain (MSG) of 19.2 dB compared to 16.0 dB for the surface-doped structure. The higher MSG value of the surface-undoped HEMTs is obtained due to the improved g_m/g₀ ratio associated with the surface-induced electric field spreading effect. Comparison of identical 0.3-×150-μm-gate devices fabricated on surface-undoped and -doped structures has shown greatly improved gate leakage characteristics and much lower output conductance for the surface-undoped structure. It is demonstrated that the surface potential, modulated by different surface layer designs, affects the charge control in the conducting channel, especially the carrier injection into the buffer, resulting in excess output conductance. Several millimeter-wave coplanar waveguide (CPW) monolithic distributed amplifiers have been successfully fabricated by using the surface-undoped HEMT structure. A high gain per stage distributed amplifier with 170-dB±1-dB small-signal gain across a frequency band of 24-40 GHz, a W-band monolithic integrated circuit with 6.4-dB gain at 94 GHz, and a broad bandwidth distributed amplifier with 5-dB gain across a frequency band of 5 to 100 GHz have been demonstrated by using the surface-undoped structures     

1.5 V large-driving class-AB buffer amplifier with quiescent current control

A 1.5 V large-driving class-AB buffer amplifier with quiescent current control suitable for output driver application is proposed. An experimental prototype buffer demonstrated that the circuit draws only 80 /spl mu/A static current, and exhibited the rise time of 0.4 /spl mu/s and fall time of 1 /spl mu/s under a 100 /spl Omega///150 pF load.     

Ultrafine Nanoparticle‐Supported Ru Nanoclusters with Ultrahigh Catalytic Activity

The design of an ideal heterogeneous catalyst for hydrogenation reaction is to impart the catalyst with synergetic surface sites active cooperatively toward different reaction species. Herein a new strategy is presented for the creation of such a catalyst with dual active sites by decorating metal and metal oxide nanoparticles with ultrafine nanoclusters at atomic level. This strategy is exemplified by the design and synthesis of Ru nanoclusters supported on Ni/NiO nanoparticles. This Ru‐nanocluster/Ni/NiO‐nanoparticle catalyst is shown to exhibit ultrahigh catalytic activity for benzene hydrogenation reaction, which is 55 times higher than Ru–Ni alloy or Ru on Ni catalysts. The nanoclusters‐on‐nanoparticles are characterized by high‐resolution transmission electron microscope, Cs‐corrected high angle annular dark field‐scanning transmission electron microscopy, elemental mapping, high‐sensitivity low‐energy ion scattering, and X‐ray absorption spectra. The atomic‐scale nanocluster–nanoparticle structural characteristics constitute the basis for creating the catalytic synergy of the surface sites, where Ru provides hydrogen adsorption and dissociation site, Ni acts as a “bridge” for transferring H species to benzene adsorbed and activated at NiO site, which has significant implications to multifunctional nanocatalysts design for wide ranges of catalytic reactions.     

Strong quantum confinement effect in nanocrystalline cerium oxide

Highly uniform and well-dispersed cerium oxide quantum dots were successfully synthesized by simple precipitation method by using cerium ammonium nitrate and ammonium hydroxide as precursor materials with suitable conditions. The X-ray diffraction pattern indicates the formation of cubic phase CeO₂. The average particle size of cerium oxide from high resolution transmission electron microscopy (HRTEM) was found to be 3 nm. The X-ray photoelectron (XPS) spectrum confirms the presence of Ce³⁺ in CeO₂. Optical studies by UV–vis spectroscopy for the synthesized CeO₂ nanoparticles exhibit a blue shift (E_g = 3.78 eV) with respect to the bulk material (E_g = 3.15 eV) due to quantum confined exciton absorption.     

Growth of Salmonella enterica and Staphylococcus aureus in no-knead bread dough during prolonged yeast fermentation

A convenient bread making method involving prolonged fermentation of no-knead (nonkneaded) dough has become popular in recent years. In the present study, the microbial safety of no-knead dough made with a 375:325:5:1 weight ratio of flour, water, salt, and bread yeast was investigated. Three brands of dehydrated yeast were used for this study. The growth of inoculated Salmonella enterica and Staphylococcus aureus in no-knead dough during fermentation was significant (P<0.05), regardless of yeast brand. The multiplication rates of S. enterica in the initial 12 h and S. aureus over the entire 24 h of fermentation were positively correlated with fermentation temperatures of 21 to 38°C (P<0.005; r≥0.996). Mean counts of S. enterica increased by 0.5, 1.5, 1.9, and 2.4 log CFU/g, respectively, after 6, 12, 18, and 24 h of fermentation at 21 °C. The level of S. aureus increased by 0.4, 1.1, 1.7, and 2.2 CFU/g, respectively, after 18 h of fermentation at 21, 27, 32, and 38 °C. Because prolonged fermentation permits substantial growth of infectious and/or toxin-producing foodborne pathogens, the making of slow-rise, no-knead bread may compromise consumer kitchen sanitation and food safety.     

Neuro-fuzzy networks for voltage security monitoring based onsynchronized phasor measurements

The ability to rapidly acquire synchronized phasor measurements from around a power network opens up new possibilities for power system operation and control. A novel neuro-fuzzy network, the fuzzy hyperrectangular composite neural network, is proposed for voltage security monitoring (VSM) using synchronized phasor measurements as input patterns. This paper demonstrates how neuro-fuzzy networks can be constructed offline and then utilized online for monitoring voltage security. The neuro-fuzzy network is tested on 3000 simulated data from randomly generated operating conditions on the IEEE 30-bus system to indicate its high classification rate for voltage security monitoring     

柑橘近红外光谱无损检测技术研究进展

柑橘是世界第一大水果,中国是柑橘生产和销售大国.现阶段我国柑橘产业存在各环节分离、加工技术粗糙、采后品质分级落后等问题,导致我国柑橘在国际市场上缺乏竞争力.对柑橘产品进行检测与分级是提高竞争力的有效手段,然而传统的柑橘品质检测手段如肉眼识别法、图像识别法、化学滴定法等存在费时费力、精度不高等缺陷,且化学滴定法等对样品具...     

Triple-channel InP-based HEMT with highly nonlinear transconductance for nonlinear circuit applications

The authors report the development of a triple-channel HEMT with two undoped In/sub 0.53/Ga/sub 0.47/As layers and a spike-doped In/sub 0.52/Al/sub 0.48/As layer on InP, designed to have a strongly nonlinear transconductance. The effective electron velocity and the electron density in the InGaAs layers are higher than in the thick InAlAs layer resulting in a highly nonlinear transconductance device with the potential for improved performance in nonlinear microwave circuit applications, as compared with conventional MESFETs and HEMTs.<>