High-power 980-nm AlGaAs/InGaAs strained quantum-well laser grown by OMVPE

High-power lattice-strained AlGaAs/InGaAs graded index separate-confinement heterostructure (GRINSCH) quantum-well lasers emitting at a 980-nm wavelength have been grown by organometallic vapor phase epitaxy (OMVPE) and fabricated with a self-aligned ridge-waveguide structure. Using a 3- mu m-wide and 750- mu m-long AR-HR coated laser, 30 mV of optical power was coupled into optical fibers with 28.6% efficiency. A dominating single-lobe far-field radiation pattern was obtained from a wedge-shaped ridge-waveguide laser for output power as high as 240 mW with a maximum output power of 310 mW.<>     

Ordered dynamic channel assignment scheme with reassignment inhighway microcells

An ordered dynamic channel assignment with reassignment (ODCAR) scheme is proposed, and its performance is studied in a highway microcellular radio environment. Channels are assigned in an ordered basis in conjunction with a minimax algorithm under cochannel interference constraints, to provide high capacity and to alleviate worst case channel congestion in each microcell. Simulation results show significant performance improvements in terms of channel utilization and probability of call failure, at the expense of an increase in complexity and call switching requirements     

The synthesis and characterization of novel 2-nitrobenzyl sulfonate photo-generators of acid

Methodology was developed for the synthesis of novel 2-substituted o-nitrobenzyl chromophores, which were derivatized as the tosylate esters. The thermal stabilities of these new tosylates fell within the range predicted from an empirical model. Lithographic sensitivities of deep UV resists made from these new esters and poly(4-(tert-butoxycarbonyloxy)styrene-sulfone) ranged from 45 to 90 mJ/cm².     

Convergence analysis of hybrid bi-directional associative memory neural networks with discrete delays

In this paper, the dynamical characteristics of hybrid bi-directional associative memory (BAM) neural networks with constant transmission delays are investigated. Without assuming the symmetry of synaptic connection weights and the monotonicity and differentiability of activation functions, the Lyapunov functionals are constructed and Halanay-type inequalities are respectively employed to derive the delay-independent sufficient conditions under which the networks converge exponentially to the equilibria associated with temporally uniform external inputs. Some examples are given to illustrate that the results are less conservative and less restrictive than the previously known results.     

A PLL clock generator with 5 to 10 MHz of lock range formicroprocessors

A microprocessor clock generator based on an analog phase-locked loop (PLL) is described for deskewing the internal logic control lock to an external system lock. This PLL is fully generated onto a 1.2-million-transistor microprocessor in 0.8-μm CMOS technology without the need for external components. It operates with a lock range from 5 to 110 MHz. The clock skew is less than 0.1 ns, with a peak-to-peak jitter of less than 0.3 ns for a 50-MHz system clock frequency     

Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses

Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low V_d-stress and in high V_d-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low V_d-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress     

A transmit/receive IF chip set for WCDMA mobiles in 0.35 /spl mu/m CMOS

An implementation of the IF section of WCDMA mobile transceivers with a set of two chips fabricated in an inexpensive 0.35-/spl mu/m two-poly three-metal CMOS process is presented. The transmit/receive chip set integrates quadrature modulators and demodulators, wide dynamic range automatic gain control (AGC) amplifiers, with linear-in-decibel gain control, and associated circuitry. This paper describes the problems encountered and the solutions envisaged to meet stringent specifications, with process and temperature variations, thus overcoming the limitations of CMOS devices, while operating at frequencies in the range of 100 MHz-1 GHz. Detailed measurement results corroborating successful application of the new techniques are reported. A receive AGC dynamic range of 73 dB with linearity error of less than /spl plusmn/2 dB and spread of less than 5 dB for a temperature range of -30/spl deg/C to +85/spl deg/C in the gain control characteristic has been measured. The modulator measurement shows a carrier suppression of 35 dB and sideband/third harmonic suppression of over 46 dB. The core die area of each chip is 1.5 mm/sup 2/.     

Broadband dual-polarized patch antennas fed by capacitively coupledfeed and slot-coupled feed

Designs of broadband dual-polarized patch antennas fed by promising feed structures of a capacitively coupled feed and a slot-coupled feed (antenna A), two capacitively coupled feeds of a 180° phase shift and a slot-coupled feed (antenna B), and two capacitively coupled feeds of a 180° phase shift and two slot-coupled feeds (antenna C) are proposed and experimentally studied. The first two feed designs are for the excitation of a single-element broadband patch antenna, while the last design is for a two-element broadband patch antenna. These proposed patch antennas have a thick air substrate, and the 10 dB return-loss impedance bandwidths obtained for the two polarizations are all greater than 13%. High isolation (<-30 dB for antenna A, <-32 dB for antenna B, <-35 dB for antenna C) between the two feeding ports for the entire impedance bandwidth of the proposed antennas can be obtained. Also, improved cross-polarization levels (>20 dB) in both E and H plane patterns for the two polarizations of antennas B and C are achieved