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41.
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Balasa F. Catthoor F. Hugo De Man 《Very Large Scale Integration (VLSI) Systems, IEEE Transactions on》1995,3(2):157-172
Memory cost is responsible for a large amount of the chip and/or board area of customized video and image processing system realizations. In this paper, we present a novel technique-founded on data-flow analysis which allows one to address the problem of background memory size evaluation for a given nonprocedural algorithm specification, operating on multidimensional signals with affine indexes. Most of the target applications are characterized by a huge number of signals, so a new polyhedral data-flow model operating on groups of scalar signals is proposed. These groups are obtained by a novel analytical partitioning technique, allowing to select a desired granularity, depending on the application complexity. The method incorporates a way to tradeoff memory size with computational and controller complexity 相似文献
43.
刍议小型水电站项目收购风险管理 总被引:1,自引:0,他引:1
相对于其他项目的收购风险评估,小型水电站(电站总装机容量5万kW以下)收购有其特殊性。在总结和归纳小型水电站特点的基础上,结合一般项目收购风险评估方法,分析项目收购各个阶段存在的风险和对策。为有收购水电项目意向的企业和个人提供决策依据。图1幅。 相似文献
44.
Degradation Behaviors of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors Under DC Bias Stresses 总被引:1,自引:0,他引:1
Min Xue Mingxiang Wang Zhen Zhu Dongli Zhang Man Wong 《Electron Devices, IEEE Transactions on》2007,54(2):225-232
Device degradation behaviors of typical-sized n-type metal-induced laterally crystallized polycrystalline silicon thin-film transistors were investigated in detail under two kinds of dc bias stresses: hot-carrier (HC) stress and self-heating (SH) stress. Under HC stress, device degradation is the consequence of HC induced defect generation locally at the drain side. Under a unified model that postulates, the establishment of a potential barrier at the drain side due to carrier transport near trap states, device degradation behavior such as asymmetric on current recovery and threshold voltage degradation can be understood. Under SH stress, a general degradation in subthreshold characteristic was observed. Device degradation is the consequence of deep state generation along the entire channel. Device degradation behaviors were compared in low Vd-stress and in high Vd-stress condition. Defect generation distribution along the channel appears to be different in two cases. In both cases of SH degradation, asymmetric on current recovery was observed. This observation, when in low Vd-stress condition, is tentatively explained by dehydrogenation (hydrogenation) effect at the drain (source) side during stress 相似文献
45.
Application of model predictive control strategy based on fuzzy identification to an SP-100 space reactor 总被引:1,自引:0,他引:1
In this work, a model predictive control method combined with fuzzy identification, is applied to the design of the thermoelectric (TE) power control in the SP-100 space reactor. The future TE power is predicted by using the fuzzy model identified by a subtractive clustering method of a fast and robust algorithm. The objectives of the proposed fuzzy model predictive controller are to minimize both the difference between the predicted TE power and the desired power, and the variation of control drum angle that adjusts the control reactivity. Also, the objectives are subject to maximum and minimum control drum angle and maximum drum angle variation speed. The genetic algorithm that is effective in accomplishing multiple objectives is used to optimize the fuzzy model predictive controller. A lumped parameter simulation model of the SP-100 nuclear space reactor is used to verify the proposed controller. The results of numerical simulations to check the performance of the proposed controller show that the TE generator power level controlled by the proposed controller could track the target power level effectively, satisfying all control constraints. 相似文献
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47.
为使北京谱仪端盖族射计数器更好地工作在自猝灭流光SQS模式下,提高其能量分辨以及线性等指标,用Ar,CO2,Lsobutane三元工作气体对探测器的工作性能进行了仔细研究,找出了一适合于主雇地数器的工作气体,此外,还研究了异丁的纯度对探测器性能的影响。 相似文献
48.
Effect of grain boundary phase on the thermal conductivity of aluminium nitride ceramics 总被引:2,自引:0,他引:2
Ching -Fong Chen M. E. Perisse A. F. Ramirez N. P. Padture H. M. Chan 《Journal of Materials Science》1994,29(6):1595-1600
AIN with high thermal conductivity was fabricated by pressureless sintering with Y2O3 as the sintering aid. The thermal conductivity was observed to increase with sintering time (up to 8 h) at 1810 °C. The distribution of the sintering aid was identified as one of the major factors influencing the thermal conductivity in AIN. Non-uniform distribution of the grain boundary phase was found to be associated with a significant amount of porosity, resulting in the enhancement of phonon scattering and thereby lowering the thermal conductivity. 相似文献
49.
Performance analysis of adaptive interleaving for OFDM systems 总被引:7,自引:0,他引:7
We proposed a novel interleaving technique for orthogonal frequency division multiplexing (OFDM), namely adaptive interleaving, which can break the bursty channel errors more effectively than traditional block interleaving. The technique rearranges the symbols according to instantaneous channel state information of the OFDM subcarriers so as to reduce or minimize the bit error rate (BER) of each OFDM frame. It is well suited to OFDM systems because the channel state information (CSI) values of the whole frame could be estimated at once when transmitted symbols are framed in the frequency dimension. Extensive simulations show that the proposed scheme can greatly improve the performance of the coded modulation systems utilizing block interleaving. Furthermore, we show that the adaptive interleaving out performs any other static interleaving schemes, even in the fast fading channel (with independent fading between symbols). We derived a semi-analytical bound for the BER of the adaptive interleaving scheme under correlated Rayleigh fading channels. Furthermore, we discussed the transmitter-receiver (interleaving pattern) synchronization problem 相似文献
50.