Fast release process of metal structure using chemical dry etching of sacrificial Si layer

An ultra-fast removal process of a silicon sacrificial layer for the selective release of a metal structure on a Si substrate was studied, which uses a chemical dry etching method. The chemical dry etching of a Si layer was performed in an NF₃ remote plasma with the direct injection of additive nitric oxide (NO) gas. When the NO gas was injected into the chamber into which F radicals were supplied from a remote plasma source using NF₃ input gas, the silicon layer was removed selectively and the metal structure could be released easily. It was found that the etch rate on the sidewall (up to ≅ 18.7 μm/min for an opening width of 100 μm) and the bottom (up to ≅ 24.5 μm/min for an opening width of 100 μm) depends on the NO/(NO + Ar) gas flow ratio, time duration, and opening width. The developed dry etching process could be used to release a Ni structure with near infinite selectivity in a very short time. The process is well suited for fabricating various devices which require a suspended structure, such as in radio-frequency microelectromechanical system switches, tunable capacitors, high-Q suspended inductors and suspended-gate metal-oxide semiconductor field-effect transistors.     

Experimental and numerical studies for the forming groove and separating groove design in slit rolling process

This paper presents a design method of the forming groove-to-separating groove rolling sequence used in slit rolling process. Based on the equivalent rectangle approximation, we have designed the forming groove which produces a peanut-shaped cross section via rolling from workpiece with an inlet (incoming) square cross section. The separating groove is designed by lowering its width and height in the ratio of 1:3 for the given reduction ratio. With the forming groove and separating groove designed by the proposed design method, we have performed a pilot rolling test at high temperature (around 1000°C) using low carbon (0.1%C) steel and have also carried out finite element analysis to examine the expansibility of the proposed design method. The Results reveal that if the ratio of the roll diameter over the side length of a square is in the range of 4.0 ∼ 8.0, the design method proposed in this study can be systematically applied to design the forming groove-to-separating groove without relying on in-house databases and/or on-site experience.     

A dead reckoning localization system for mobile robots using inertial sensors and wheel revolution encoding

Inertial navigation systems (INS) are composed of inertial sensors, such as accelerometers and gyroscopes. An INS updates its orientation and position automatically; it has an acceptable stability over the short term, however this stability deteriorates over time. Odometry, used to estimate the position of a mobile robot, employs encoders attached to the robot’s wheels. However, errors occur caused by the integrative nature of the rotating speed and the slippage between the wheel and the ground. In this paper, we discuss mobile robot position estimation without using external signals in indoor environments. In order to achieve optimal solutions, a Kalman filter that estimates the orientation and velocity of mobile robots has been designed. The proposed system combines INS and odometry and delivers more accurate position information than standalone odometry.     

Advancing assessment and design of stormwater monitoring programs using a self-organizing map: characterization of trace metal concentration profiles in stormwater runoff

Stormwater runoff poses a great challenge to the scientific assessment of the effects of diffuse pollution sources on receiving waters. In this study, a self-organizing map (SOM), a research tool for analyzing specific patterns in a large array of data, was applied to the monitoring data obtained from a stormwater monitoring survey to acquire new insights into stream water quality profiles under different rainfall conditions. The components of the input data vectors used by the SOM included concentrations of 10 metal elements, river discharge, and rainfall amount which were collected at the inlet and endpoint of an urban segment of the Yeongsan River, Korea. From the study, it was found that the SOM displayed significant variability in trace metal concentrations for different monitoring sites and rainfall events, with a greater impact of stormwater runoff on stream water quality at the upstream site than at the downstream site, except under low rainfall conditions (≤4 mm). In addition, the SOM clearly determined the water quality characteristics for “non-storm” and “storm” data, where the parameters nickel and arsenic and the parameters chromium, cadmium, and lead played an important role in reflecting the spatial and temporal water quality, respectively. When the SOM was used to examine the efficacy of stormwater quality monitoring programs, between 34 and 64% of the sample size in the current data set was shown to be sufficient for estimating the stormwater pollutant loads. The observed errors were small, generally being below 10, 6, and 20% for load estimation, map resolution, and clustering accuracy, respectively. Thus, the method recommended may be used to minimize monitoring costs if both the efficiency and accuracy are further determined by examining a large existing data set.     

Directed self-assembly of organic semiconductors via confined evaporative capillary flows for use in organic field-effect transistors

We fabricated well-defined 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) crystal arrays for use in electronic applications via a simple but effective method, the confined evaporative capillary flow (CEC) method. This has been accomplished by systematically controlling the contact line pinning at the edge of glass stylus and the outward hydrodynamic flow within the drying droplet with various processing solvents and surface properties of the substrate during solidification. We found that after CEC coating of TIPS-PEN solution dissolved into toluene onto SiO₂ surface, ribbon-shaped TIPS-PEN crystals were well developed with a width of 20–100 μm and length of 300 μm – 2 mm, which is presumably owing to optimized capillary evaporation. Specifically, TIPS-PEN crystals present highly preferred crystal orientation along the (l 0 0) axis, which can lead to efficient charge transport in a lateral direction. Thus, TIPS-PEN field-effect transistors (FETs) exhibited a good hole mobility of 0.72 cm²/Vs.     

Versatile threshold voltage control of OTFTs via discontinuous pn-heterojunction formation

We demonstrate the versatility of the threshold voltage control for organic thin-film transistors (OTFTs) based on formation of discontinuous pn-heterojunction on the active channel layer. By depositing n-type dioctyl perylene tetracarboxylic diimide molecules discontinuously onto base p-type pentacene thin films (the formation of the discontinuous pn-heterojunction), a positive shift of the threshold voltage was attained which enabled realizing a depletion-mode transistor from an original enhancement-mode pristine pentacene transistor. Careful control of the threshold voltage based on this method led assembling a depletion-load inverter comprising a depletion-mode transistor and an enhancement-mode transistor connected in series that yielded tunable signal inversion voltage approaching 0 V. In addition, the tunability could be applied to improve the program/erase signal ratio for non-volatile transistor memories by more than 4 orders of magnitude compared to reference memory devices made of pristine pentacene transistors.     

Transforming One‐Dimensional Nanowalls to Long‐Range Ordered Two‐Dimensional Nanowaves: Exploiting Buckling Instability and Nanofibers Effect in Holographic Lithography

Two‐dimensional nanowaves with long‐range order are fabricated by exploiting swelling‐induced buckling of one‐dimensional (1D) nanowalls with nanofibers formed in‐between during holographic lithography of the negative‐tone photoresist SU‐8. The 1D film goes through a constrained swelling in the development stage, and becomes buckled above the critical threshold. The degree of lateral undulation can be controlled by tuning the pattern aspect ratio (height/width) and exposure dosage. At a high aspect ratio (e.g., 6) and a high exposure dosage, nanofibers (30–50 nm in diameter) are formed between the nanowalls as a result of overlapping of low crosslinking density regions. By comparing experimental results with finite‐element analysis, the buckling mechanism is investigated, which confirms that the nanofibers prevent the deformed nanowalls from recovery to their original state, thus, leading to long‐range ordered two‐dimensional (2D) wavy structures. The film with nanowaves show weaker reflecting color under an ambient light and lower transmittance compared to the straight nanowalls. Using double exposure through a photomask, patterns consisting of both nanowaves and nanowalls for optical display are created.     

Photo‐Stable Organic Thin‐Film Transistor Utilizing a New Indolocarbazole Derivative for Image Pixel and Logic Applications

Small molecule pentacene layer has been a representative among many organic thin‐film transistor (OTFT) channels with decent p‐type mobilities, but it is certainly light‐sensitive due to its relatively small highest occupied molecular orbital‐lowest unoccupied molecular orbital (HOMO‐LUMO) gap (1.85 eV). Although a few other small molecule‐based layers have been reported later, their photo‐stabilities or related device applications have hardly been addressed. Here, a new photostable organic layer is reported, heptazole (C₂₆H₁₆N₂), which has almost the same HOMO level as that of pentacene but with a higher HOMO‐LUMO gap (≈2.95 eV). This heptazole OTFT displays a decent mobility comparable to that of conventional amorphous Si TFTs, showing good photostability unlike pentacene OTFTs. An image pixel driving the photostable heptazole OTFT connected to a pentacene/Al Schottky photodiode is demonstrated. This heptazole OTFT also conveniently forms a logic inverter coupled with a pentacene OTFT, sharing Au for source/drain.     

Toward Advanced Mobile Cloud Computing for the Internet of Things: Current Issues and Future Direction

Cloud computing is the coming new era of information processing and has proved its benefits in high scalability and functional diversity. However, almost all cloud-computing architectures including SaaS, PaaS, and IaaS are vulnerable to serious security issues. Similarly, Mobile Cloud Computing (MCC) is vital to overcoming mobile limited storage and computing capabilities. MCC authentication and authorization issues must be provided on two levels: login password control and the environment from where the cloud is accessed. MCC has overcome the barrier of limited storage by providing remote storage but requires a strict security system that is responsible for retrievability, integrity, and seamless storage access. Elasticity and connectivity are also of major concern in MCC because delays and jitters cause degradation in the user experience. Cloud-computing architecture creates more challenges in maintaining security because of the liberty of users to choose any MCC architecture. Thus in this paper we discuss current cloud computing issues and future directions.