Monitoring the Channel Formation in Organic Field‐Effect Transistors via Photoinduced Charge Transfer

Conducting channel formation in organic field‐effect transistors (OFETs) is considered to happen in the organic semiconductor layer very close to the interface with the gate dielectric. In the gradual channel approximation, the local density of accumulated charge carriers varies as a result of applied gate bias, with the majority of the charge carriers being localized in the first few semiconductor monolayers close to the dielectric interface. In this report, a new concept is employed which enables the accumulation of charge carriers in the channel by photoinduced charge transfer. An OFET employing C₆₀ as a semiconductor and divinyltetramethyldisiloxane‐bis(benzocyclobutene) as the gate dielectric is modified by a very thin noncontinuous layer of zinc‐phthalocyanine (ZnPc) at the semiconductor/dielectric interface. With this device geometry, it is possible to excite the phthalocyanine selectively and photogenerate charges directly at the semiconductor/dielectric interface via photoinduced electron transfer from ZnPc onto C₆₀. Thus the formation of a gate induced and a photoinduced channel in the same device can be correlated.     

Visualizing the performance loss of solar cells by IR thermography — an evaluation study on CIGS with artificially induced defects

Local electric defects may result in considerable performance losses in solar cells. Infrared (IR) thermography is one important tool to detect these defects on photovoltaic modules. Qualitative interpretation of IR images has been carried out successfully, but quantitative interpretation has been hampered by the lack of “calibration” defects. The aims of this study are to (i) establish methods to induce well‐defined electric defects in thin‐film solar cells serving as “calibration” defects and to (ii) assess the accuracy of IR imaging methods by using these artificially induced defects. This approach paves the way for improving quality control methods based on imaging in photovoltaic. We created ohmic defects (“shunts”) by using a focused ion beam and weak diodes (“interface shunts”) by applying a femto‐second laser at rather low power on copper indium gallium selenide cells. The defects can be induced precisely and reproducibly, and the severity of the defects on the electrical performance can be well adjusted by focused ion beam/laser parameters. The successive assessment of the IR measurement (ILIT‐Voc) revealed that this method can predict the losses in P_mpp (maximal power extractable) with a mean error of below 10%. Copyright © 2016 John Wiley & Sons, Ltd.     

Composition Engineering of All‐Inorganic Perovskite Film for Efficient and Operationally Stable Solar Cells

Cesium‐based inorganic perovskites have recently attracted great research focus due to their excellent optoelectronic properties and thermal stability. However, the operational instability of all‐inorganic perovskites is still a main hindrance for the commercialization. Herein, a facile approach is reported to simultaneously enhance both the efficiency and long‐term stability for all‐inorganic CsPbI_2.5Br_0.5 perovskite solar cells via inducing excess lead iodide (PbI₂) into the precursors. Comprehensive film and device characterizations are conducted to study the influences of excess PbI₂ on the crystal quality, passivation effect, charge dynamics, and photovoltaic performance. It is found that excess PbI₂ improves the crystallization process, producing high‐quality CsPbI_2.5Br_0.5 films with enlarged grain sizes, enhanced crystal orientation, and unchanged phase composition. The residual PbI₂ at the grain boundaries also provides a passivation effect, which improves the optoelectronic properties and charge collection property in optimized devices, leading to a power conversion efficiency up to 17.1% with a high open‐circuit voltage of 1.25 V. More importantly, a remarkable long‐term operational stability is also achieved for the optimized CsPbI_2.5Br_0.5 solar cells, with less than 24% degradation drop at the maximum power point under continuous illumination for 420 h.     

A two-stage capacitive-feedback differencing amplifier for temporal contrast IR sensors

This article presents a small-area, ultra low-power, low-mismatch differencing transient amplifier for ROIC pixels of micro-bolometer based temporal contrast IR sensors. The two-stage capacitive-feedback amplifier works in the sub-threshold domain, has a voltage gain of 46 dB, a 3 dB bandwidth of about 10 kHz and consumes 85 nW of static power. The amplifier circuit has been fabricated in a 0.35 μm standard CMOS process and consumes less than 2000 μm² of silicon area, enabling a square pixel size of 50 × 50 μm for the IR sensor array.     

Adaptive Call Admission Control for QoS/Revenue Optimization in CDMA Cellular Networks

In this paper, we show how online management of both quality of service (QoS) and provider revenue can be performed in CDMA cellular networks by adaptive control of system parameters to changing traffic conditions. The key contribution is the introduction of a novel call admission control and bandwidth degradation scheme for real-time traffic as well as the development of a Markov model for the admission controller. This Markov model incorporates important features of 3G cellular networks, such as CDMA intra- and inter-cell interference, different call priorities and soft handover. From the results of the Markov model the threshold for maximal call degradation is periodically adjusted according to the currently measured traffic in the radio access network. As a consequence, QoS and revenue measures can be optimized with respect to a predefined goal. To illustrate the effectiveness of the proposed QoS/revenue management approach, we present quantitative results for the Markov model and a comprehensive simulation study considering a half-day window of a daily usage pattern.     

Controlling Chiral Spin States of a Triangular‐Lattice Magnet by Cooling in a Magnetic Field

Magnetic materials with a non‐collinear and non‐coplanar arrangement of magnetic moments hosting a nonzero scalar spin‐chirality exhibit unique magnetic and spin‐dependent electronic transport properties. The spin chirality often occurs in materials where competing exchange interactions lead to geometrical frustrations between magnetic moments and to a strong coupling between the crystal lattice and the magnetic structure. These characteristics are particularly strong in Mn‐based antiperovskites where the interactions and chirality can be tuned by substitutional modifications of the crystalline lattice. This study presents evidence for the formation of two unequal chiral spin states in magnetically ordered Mn_3.338Ni_0.651N antiperovskite based on density functional theory calculations and supported by magnetization measurements after cooling in a magnetic field. The existence of two scalar spin‐chiralities of opposite sign and different magnitude is demonstrated by a vertical shift of the magnetic‐field dependent magnetization and Hall effect at low fields and from an asymmetrical magnetoresistivity when the applied magnetic field is oriented parallel or antiparallel to the direction of the cooling field. This opens up the possibility of manipulating the spin chirality for potential use in the emerging field of chiral spintronics.     

TiN and TaN diffusion barriers in copper interconnect technology: Towards a consistent testing methodology

The present status of work on diffussion barriers for copper in multilevel interconnects is surveyed briefly, with particular emphasis on TiN and TaN, and silicon dioxide as the interlayer dielectric. New results are presented for these materials, combining thermal annealing and bias temperature stress testing. With both stress methods, various testing conditions are compared using capacitance-vs-voltage (C-V) and leakage current-vs-voltage (I-V) measurements to characterize the stressed samples. From an evaluation of these data and a comparison with other testing approaches, conditions for a consistent testing methodology of barrier reliability are outlined.     

An optimal nonorthogonal separation of the anisotropic Gaussian convolution filter.

We give an analytical and geometrical treatment of what it means to separate a Gaussian kernel along arbitrary axes in R(n), and we present a separation scheme that allows us to efficiently implement anisotropic Gaussian convolution filters for data of arbitrary dimensionality. Based on our previous analysis we show that this scheme is optimal with regard to the number of memory accesses and interpolation operations needed. The proposed method relies on nonorthogonal convolution axes and works completely in image space. Thus, it avoids the need for a fast Fourier transform (FFT)-subroutine. Depending on the accuracy and speed requirements, different interpolation schemes and methods to implement the one-dimensional Gaussian (finite impulse response and infinite impulse response) can be integrated. Special emphasis is put on analyzing the performance and accuracy of the new method. In particular, we show that without any special optimization of the source code, it can perform anisotropic Gaussian filtering faster than methods relying on the FFT.     

Avalanche‐Discharge‐Induced Electrical Forming in Tantalum Oxide‐Based Metal–Insulator–Metal Structures

Oxide‐based metal–insulator–metal structures are of special interest for future resistive random‐access memories. In such cells, redox processes on the nanoscale occur during resistive switching, which are initiated by the reversible movement of native donors, such as oxygen vacancies. The formation of these filaments is mainly attributed to an enhanced oxygen diffusion due to Joule heating in an electric field or due to electrical breakdown. Here, the development of a dendrite‐like structure, which is induced by an avalanche discharge between the top electrode and the Ta₂O_5‐x layer, is presented, which occurs instead of a local breakdown between top and bottom electrode. The dendrite‐like structure evolves primarily at structures with a pronounced interface adsorbate layer. Furthermore, local conductive atomic force microscopy reveals that the entire dendrite region becomes conductive. Via spectromicroscopy it is demonstrated that the subsequent switching is caused by a valence change between Ta⁴⁺ and Ta⁵⁺, which takes place over the entire former Pt/Ta₂O_5‐x interface of the dendrite‐like structure.