A 9.1–10.7 GHz 10-W, 40-dB Gain Four-Stage PHEMT MMIC Power Amplifier

This letter presents a compact X-band high gain and high power four-stage AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuit (MMIC) high power amplifier (PA). This amplifier is designed to fully match a 50-Omega input and output impedance. Based on 0.35-mum gate-length power PHEMT technology, this PA MMIC is fabricated on a 3-mil thick wafer. While operating under 8 V and 2700-mA dc bias condition, the characteristics of 40-dB small-signal gain, a 10-W continuous-wave saturation output power, and 33% power added efficiency at 9.7GHz can be achieved     

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

In this letter, we report on the microwave power and efficiency performance of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V _ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V _ds = 48 V. These results are the highest reported power performance for AlGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates.     

An analytical programming model for the drain-coupling source-side injection split gate flash EEPROM

This paper presents a compact and accurate analytical model for evaluating the programming behaviors of the drain-coupling source-side injection (SSI) split-gate Flash memory. Starting with the bias-dependent and time-varying drain coupling ratio, a programming model is developed on the basis of the constant barrier height approximation and Lucky-electron model to express the full transient injection current, peak lateral electric field, and storage charge as functions of technological, physical, and electrical parameters. The extracted re-direction mean-free path of the SSI device is smaller than that of the channel hot-electron counterpart by one order of magnitude, which provides the physical intuition for the derived high injection efficiency of around 2/1000. The intrinsic coupling ratio depends only on technological parameters and is presented as the design index of the device. The usefulness of this model is its ability of constructing the complete operation plot of the time-to-program versus the programming voltage for various reliability windows and tunable technological parameters. Besides, the variance of the read current distribution of a memory array is also analytically predicted.     

A 0.25-/spl mu/m CMOS quad-band GSM RF transceiver using an efficient LO frequency plan

This paper describes a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS applications. It is the most important design issue to maximize resource sharing and reuse in designing the multiband transceivers. In particular, reducing the number of voltage-controlled oscillators (VCOs) required for local oscillator (LO) frequency generation is very important because the VCO and phase-locked loop (PLL) circuits occupy a relatively large area. We propose a quad-band GSM transceiver architecture that employs a direct conversion receiver and an offset PLL transmitter, which requires only one VCO/PLL to generate LO signals by using an efficient LO frequency plan. In the receive path, four separate LNAs are used for each band, and two down-conversion mixers are used, one for the low bands (850/900 MHz) and the other for the high bands (1800/1900 MHz). A receiver baseband circuit is shared for all four bands because all of their channel spaces are the same. In the transmit path, most of the building blocks of the offset PLL, including a TX VCO and IF filters, are integrated. The quad-band GSM transceiver that was implemented in 0.25-/spl mu/m CMOS technology has a size of 3.3/spl times/3.2 mm/sup 2/, including its pad area. From the experimental results, we found that the receiver provides a maximum noise figure of 2.9 dB and a minimum IIP3 of -13.2dBm for the EGSM 900 band. The transmitter shows an rms phase error of 1.4/spl deg/ and meets the GSM spectral mask specification. The prototype chip consumes 56 and 58 mA at 2.8 V in the RX and TX modes, respectively.     

A beam-scanning and polarization-agile antenna array using mutually coupled oscillating doublers

In this paper, a two-dimensional mutually coupled oscillator array is studied for the application of a beam-scanning and polarization-agile antenna array. In the design of antenna array, a two-dimensional oscillator array is implemented in x-y plane, the polarization agility is provided by one dimension (or y-direction) and the other dimension (or x-direction) is for beam scanning. By properly tuning the free-running frequencies of these oscillators, the array radiation direction can be scanned at the selected polarization states including linearly polarized, left-hand and right-hand circularly polarized states. The maximal phase difference of /spl plusmn/180/spl deg/ between coupled oscillating signals is acquired by utilizing their second-harmonic signals. This then gives well-defined phase differences among oscillators for beam scanning in addition to the required quadrature phase difference for circular polarization. The performances of polarization agility and beam scanning for a four-element antenna array are verified experimentally and shown to have the potential for adaptive antenna array applications.     

应用ANN的数字信号调制模式识别的特征矢量分析

数字信号调制模式的自动识别是无线通信中信号分析和处理的关键步骤之一。神经网络应用于数字信号调制模式识别的一个重要的预处理过程就是要形成完备的特征矢量空间。本文在原有分析方法的基础上，研究了信号的瞬时特征、谱特征和统计特征，特别提出了用于信号子类分析的新的高阶统计量特征，形成了数字调制模式自动识别的较为完备的特征矢量空间。通过对九种数字调制信号进行仿真表明，即使在信噪为5dB的条件下仍然能够获得较高的识别正确率。     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

Magnetism in SiC implanted with high doses of Fe and Mn

High concentrations (0.1–5 at.%) of Mn or Fe were introduced into the near-surface region (≤2000 Å) of 6H-SiC substrates by direct implantation at ～300°C. After annealing at temperatures up to 1000°C, the structural properties were examined by transmission electron microscopy (TEM) and selected-area diffraction pattern (SADP) analysis. The magnetic properties were examined by SQUID magnetometry. While the Mn-implanted samples were paramagnetic over the entire dose range investigated, the Fe-implanted material displayed a ferromagnetic contribution present at <175 K for the highest dose conditions. No secondary phases were detected, at least not to the sensitivity of TEM or SADP.     

THE STUDY OF AN M-ARY MC-CDMA SYSTEM BASED ON CYCLIC SPREADING CODES ＆ PRE-EQUALIZATION

A novel fast despreading scheme for M-ary Multi-Carrier Code-Division Multiple Access (MC-CDMA) system is proposed based on cyclic spreading codes and pre-equalizer. In the transmitter, the M spreading codes of each user are generated by circularly shifting the prototype spreading code. A feedback pre-equalizer is employed to process the M-ary MCCDMA signal before transmitted. The received signal is multiplied by the Inverse Discrete Fourier Transform (IDFT) result of the mirror image code of the prototype spreading code, and then demodulated by Orthogonal Frequency-Division Multiplexing (OFDM) demodulator. Compared with the conventional M-ary MC-CDMA receiver, the proposed scheme increases bandwidth efficiency, meanwhile, it achieves M-ary despread spectrum and multi-carrier demodulation, which reduces computation complexity remarkably.     

正交循环码M进制扩频接收机的研究

该文提出了一种基于正交循环码的M进制扩频接收机方案,发端将一条原型扩频码循环移位构成M个扩频码,实现M进制扩频,接收端利用时频变换域正交匹配滤波器实现了非相干解扩解调。该方案不仅减少了需要的扩频码数目,而且有效地降低了接收机的计算复杂度。该文对所提出的系统在单用户和多用户条件下的误码性能进行了理论分析和仿真,并比较了3种M进制解扩方法的运算量。结果表明：正交循环码M进制扩频系统的计算复杂度和误码特性均优于传统的M进制系统。