Growth temperature dependence of low-noise MESFET in molecular-beam epitaxy

The substrate growth temperature dependence of electrical properties for a low-noise MESFET fabricated on MBE-grown material has been demonstrated. The optimum noise figure and its associated gain were attributed to the higher epilayer quality and mobility at a growth temperature of 650°C between temperatures of 550°C and 700°C.     

One-stage sternal stenting with homograft bone after cardiac operation in pediatric patients

Low cardiac output after open heart operations in neonates and infants carries a high mortality. Delayed sternal closure may be life-saving but may prolong hospital stay and increase costs. To circumvent these issues, we shaped homograft bone and interposed it between the sternal edges to allow primary wound closure in 2 pediatric patients. Midterm results are satisfactory.     

Synthesis and Properties of the Bi-Based Superconducting Powder Prepared by the Pechini Process

Bi-based superconductors are of great interest in high-temperature superconductors. We describe what is believed to be the first synthesis of these materials using the Pechini process, a low-temperature synthetic method that often yields inorganic oxide of excellent phase purity and well-controlled stoichiometry. Using this process, it has been possible to synthesize phase-pure Bi-2223 phase by calcining the appropriate polymeric precursors in air at 800°C for several hours. The superconductivity studies show that the Pechini-synthesized materials appear to offer high-quality performance.     

Membrane sterol composition modulates the pore forming activity of syringomycin E in human red blood cells

The syndrome of hypoparathyroidism associated with growth retardation, developmental delay, and dysmorphism (HRD) is a newly described, autosomal recessive, congenital disorder with severe, often fatal consequences. Since the syndrome is very rare, with all parents of affected individuals being consanguineous, it is presumed to be caused by homozygous inheritance of a single recessive mutation from a common ancestor. To localize the HRD gene, we performed a genomewide screen using DNA pooling and homozygosity mapping for apparently unlinked kindreds. Analysis of a panel of 359 highly polymorphic markers revealed linkage to D1S235. The maximum LOD score obtained was 4.11 at a recombination fraction of 0. Analysis of three additional markers-GGAA6F06, D1S2678, and D1S179-in a 2-cM interval around D1S235 resulted in LOD scores >3. Analysis of additional chromosome 1 markers revealed evidence of genetic linkage disequilibrium and place the HRD locus within an approximately 1-cM interval defined by D1S1540 and D1S2678 on chromosome 1q42-43.     

A deep multi-source adaptation transfer network for cross-subject electroencephalogram emotion recognition

Neural Computing and Applications - In real-world application of affective brain–computer interface (aBCI), individual differences across subjects and non-stationary characteristics of...     

Delay‐dependent stability for Markovian genetic regulatory networks with time‐varying delays

This paper is concerned with the problem of stochastic stability analysis for a class of genetic regulatory networks with Markovian jump parameters and time‐varying delays. A delay‐dependent stability criterion is derived by using a novel mode‐dependent Lyapunov functional. The derived stability criterion is expressed in terms of linear matrix inequalities and is less conservative than the existing ones in the literature. A numerical example is provided to demonstrate the effectiveness of the proposed stability criterion. Copyright © 2011 John Wiley and Sons Asia Pte Ltd and Chinese Automatic Control Society     

Growth characteristics of β-SiC by chemical vapour deposition

A twin-plane re-entrant corner effect (TPRE) in growth of chemical vapour deposited (CVD) -SiC is described by the film and particles of gas-phase homogeneous nucleation. The structural morphology has been characterized by scanning electron microscopy and transmission electron microscopy. Morphological characteristics of the deposited crystals, such as triangularity, hexagons or facets have been explained in terms of the re-entrant corner effect at twin junctions, which were proposed as preferential growth sites for perfect crystals. For real deposits, screw dislocations and/or the re-entrant corner effect are not expected to be compatible. The majority of chemical vapour deposited SiC crystals have a high defect density comprised of {111} twins and dislocations associated with the process variables. Infrared transmission spectra and electron spectroscopy of chemical analysis indicated that the major chemical bonds of CVD -SiC were Si-C and C-H bonds. The positions of the 1s or 2p corelevel peaks for deposits are described.     

Piezoelectric and acoustic properties of potassium titanyl phosphate (KTP) and its isomorphs

The bulk elastic and piezoelectric properties of potassium titanyl phosphate (KTP) and some of its family members such as RbTiOPO(4 ) (RTP) and RbTiOAsO(4) (RTA) have been determined. The piezoelectric, elastic, and dielectric matrix (P-E-D) of KTP has been completely characterized. Values for the temperature dependence of the expansion coefficients and elastic constants have been obtained, and the effects of variations in dielectric constant on coupling coefficient determined. The major diagonal elements of the piezoelectric and elastic matrices of RTP and RTA were measured as were the thermal expansion coefficient of all the KTP isomorphs, KTP in the temperature range 25-80 degrees C, is shown to have a combination of large coupling coefficients (up to k(t)=38% for hydrothermally grown KTP) and medium temperature dependence coefficients of elastic constant (as low as 40 p.p.m./ degrees C for tau(c33) for hydrothermally grown KTP) that makes it attractive for many piezoelectric applications.     

软件单元测试应用研究及案例分析

单元测试是软件测试过程的第一站,高质量的单元测试是软件质量保证的必要条件,本文就单元测试的概念、测试类型及规程作了简单的阐述,同时就单元测试进行了案例分析。