2～12GHz GaAs单片行波放大器

报道了一个全平面超宽带ＧａＡｓ单片行波放大器的研究结果。该单片电路的核心部件是四个３００μｍ栅宽的ＭＥＳＦＥＴ，整个电路拓扑结构简单，芯片面积为３．０ｍｍ×１．８ｍｍ。电路经优化设计后在２～１２ＧＨｚ范围内，小信号增益为５±１ｄＢ，输入输出电压驻波比≤１．７５。上述频率范围内输出功率≥１６ｄＢｍ，噪声系数≤８ｄＢ。采用全离子注入、全平面工艺，均匀性、一致性良好。实验结果与设计预计值十分一致。     

关于布尔函数的二次逼近

本文首先利用矩阵形式引入了二阶ｗａｌｓｈ谱的概念并讨论了其性质，其次引入了二次ｂｅｎｔ函数的概念，同时论述了二次ｂｅｎｔ函数的密码学意义。     

准分子激光的应用

本文介绍了准分子激光器的基本类型、主要应用领域及其与材料相互作用的机理。对准分子激光在电子工业、生物医学和材料加工方面的一些重要应用做了比较详细的论述。     

CVD金刚石工具膜生长特征SEM观察

本文用不热形变栅状直丝化学气相沉积（ＣＶＤ）法生长金刚石膜，在Ｓｉ及ＷＣ－Ｃｏ硬质合金衬底上金刚石膜晶面显露规律随衬底温度和甲烷浓度而异，经适当表面处理及选择合适的工艺条件，当生长初期衬底上就呈现出良好晶形的沉积膜，衬底与膜之间的粘结力能得到提高。Ｒａｍａｎ谱分析表明此膜仅具有特征金刚石１３３２ｃｍ￣（－１）峰，通过ＳＥＭ观察揭示出盒刚石膜可在表面、侧面及棱上生长，并与衬底有良好的联结。     

温度调谐LBO晶体光参量振荡器

本文详细研究０．５３２μｍ激光泵浦、温度调谐Ⅱ型非临界相位匹配ＬＢＯ光参量振荡器。当温度从２０℃升高到２００℃时，其信号波和闲置波的调谐范围分别为１．００２～０．８９８μｍ和１．１３４～１．３０６μｍ。本装置最吸引人之处是本征输出线宽比Ⅰ型情形小一个量级。     

双波长Nd：YAG脉冲激光器的实验研究

根据多波长同时振荡条件，我们建立了大能量１０６４ｎｍ和１３１８ｎｍ同时运转的双波长脉冲Ｎｄ：ＹＡＧ激光器。得到了１０６４ｎｍ和１３１８ｎｍ的激光输出能量分别为０．５９４Ｊ和０．８６１Ｊ，效率分别为０．３１％和０．４５％。实验结果说明了该双波长激光器有较好的时间和空间重选性。     

A simple method for extracting average doping concentration in thepolysilicon and silicon surface layer near the oxide in polysilicon-gateMOS structures

The author demonstrates a simple technique that extracts average doping concentration in the polysilicon and silicon near the oxide in a metal/polysilicon/oxide/silicon system. The technique is based on the maximum-minimum capacitance method on two large area structures-one MOSFET and one MOSC (MOS capacitor). The technique is simple and reliable since only three data points in the C-V data are required-two points in MOSC C-V and one point in MOSFET C-V. The technique avoids inaccuracy caused by interface traps at the polysilicon/oxide and the oxide/silicon interface. The technique can be implemented into fab routine electric-test procedures for simultaneously monitoring change of doping concentration in polysilicon and silicon during process development     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

稀土在搪瓷面釉上应用的研究

采用稀土氧化物和无机化合物的复合物（不简称ＲＩ－复合物）作为搪瓷釉浆悬浮剂，使之全部或大部分代替粘土，进行了一系列试验，已获得成功，突破了长期来搪瓷工业离不开粘土的传统工艺，并实现了工业化生产。