Test Technology Technical Council Newsletter

This newsletter provides information on past and upcoming events related to the IEEE Computer Society's Test Technology Technical Council and the test community.     

Possibility of sewage and combined sewer overflow reuse with biological aerated filters.

The secondary effluent from municipal plants in Korea generally represents higher BOD with lower SS. Therefore, more soluble forms of organics and NH4-N need to be removed to improve its effluent for reuse. In this study reuse possibility of secondary effluent and CSO (combined sewer overflow) using BAF (biological aerated filter) was evaluated. The tertiary application with 1.2 h EBCT, SS, BOD and COD showed stable concentrations less than 1.3, 1.3 and 6.2 mg/L, respectively. Nitrogen could be nitrified even at 7 degrees suggesting BAF can be used for a water reuse method as well as an effective add-on facility in cold regions. However, BAF was not stable with CSO application at increased flow rates suggesting CSO must be equalised prior to application. Disinfection was necessary even during normal weather conditions.     

An enhanced zone 3 algorithm of a distance relay using transient components and state diagram

Zone 3 of a distance relay is used to provide the remote backup protection in case of the failure of the primary protection. However, the risk of maloperation under stressed conditions such as heavy loading, voltage, and transient instability is quite high. Zone 3 is used in combination with the derivatives of the voltage and current, etc. to prevent maloperation. At times, the impedance characteristics that restrict the tripping area of relay are used to avoid maloperation due to load encroachment. This work presents a novel zone 3 scheme based on combining the steady-state components (i.e., 60 Hz) and the transient components (TCs) using a state diagram that visualizes the sequence of studies that emanate from the sequence of events. The simulation results show that the novel zone 3 distance relay elements using the proposed method operate correctly for the various events.     

Validation of 3-D curved objects: CAD model and fabricatedworkpiece

This paper proposes a new method to describe and identify a 3-D curved object for the purpose of validating a fabricated object to the design specification. Curved 3-D objects are, in general, difficult to represent and identify because they lack distinct properties such as edges, planes, or cylindrical surfaces which are the building blocks in representing objects. In this paper, the authors propose to use principal axes of a 3-D object to establish a reference for the representation. A method of obtaining an inertia matrix from a 3-D range image is developed. The unique set of principal axes is obtained from the inertia matrix of an object with an arbitrary 3-D position and orientation, and the object can be described uniquely on these principal axes. On the principal axes, an object is described by a set of features describing the shape of the object such as spine, section size, section orientation, and section contraction. The features are used for comparing two objects for the validation purpose. The authors also propose a direct measure of similarity between two objects as a mean-squared difference of radii. As an experiment, two 3-D object models are designed through a CAD package, and fabricated objects are compared with the designed models for validation purposes     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

Micromechanical characterisation of fibre/matrix interfaces

Theoretical analyses for the single fibre pull-out and push-out models under monotonic loading are given which are based on a shear-lag analysis in a fracture mechanics approach considering non-constant friction at the debonded interface as a result of fibre Poisson contraction (or expansion). The solutions allow the determination of typical fibre/matrix interfacial properties such as the interfacial fracture toughness, G_ic, the coefficient of friction, μ, and the residual clamping stress, q₀. Under cyclic loading the interfacial properties are expected to degrade as a result of repetitive abrasion, and a power law function is assumed between μ and the number of elapsed cycles, N. However, G_ic is assumed to be unaffected and a fracture mechanics based debond criterion is derived for the relationship between the external applied stress, the debond length and the reduced friction coefficient for both fibre pull-out and fibre push-out. In addition, the relative displacements between the free fibre end and the matrix top are obtained for cyclic fatigue when the fibre is loaded and unloaded. A relationship obtained for the protrusion (or intrusion) length in fibre pull-out (or push-out) experiments allows the severity of the interface frictional degradation to be evaluated and characterised. Similarities and differences in the frictional degradation behaviour between fibre pull-out and push-out are also identified.     

Effects of hot carrier induced interface state generation insubmicron LDD MOSFET's

A two-dimensional numerical simulation including a new interface state generation model has been developed to study the performance variation of a LDD MOSFET after a dc voltage stress. The spatial distribution of hot carrier induced interface states is calculated with a breaking silicon-hydrogen bond model. Mobility degradation and reduction of conduction charge due to interface traps are considered. A 0.6 μm LDD MOSFET was fabricated. The drain current degradation and the substrate current variation after a stress were characterized to compare the simulation. A reduction of the substrate current at V_g ≃0.5 V_d in a stressed device was observed from both the measurement and the simulation. Our study reveals that the reduction is attributed to a distance between a maximum channel electric field and generated interface states