A wafer level monitoring method for plasma-charging damage usingantenna PMOSFET test structure

A novel monitoring method for plasma-charging damage is proposed. This method performs a quick and accurate evaluation using antenna PMOSFET. It was found that not only hot-carrier (HC) lifetime but transistor parameters such as initial gate current and substrate current were changed according to the degree of plasma-charging damage. However, the present work suggests that monitoring the shift of drain current after a few seconds of HC stress is a more accurate method to indicate plasma-charging damage. The monitoring method using the present test structure is demonstrated to be useful for realizing highly reliable devices     

Electrical linewidth test structures fabricated in monocrystallinefilms for reference-material applications

The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of monocrystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the IMplantation of OXygen) processing. The motivation is to facilitate the development of linewidth reference materials for critical-dimension (CD) metrology-instrument calibration. The selection of the (110) orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enable a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications include the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features     

A unified diode model for circuit simulation

A new commercially available diode model is described. This unified model is capable of simulating the widest range of diode technologies of any presently available. The emphasis of this paper is on describing the model's extensive features and flexibility in the different domains of operation and is of particular interest in power applications     

Soft commutation in capacitive idling converters

The capacitive idling converters derived from the Cuk, SEPIC, Zeta, and flyback topologies allow soft commutation of power switches without the need for additional circuitry, making it possible to increase the switching frequency while maintaining high efficiency     

Pipelining and bypassing in a VLIW processor

This short note describes issues involved in the bypassing mechanism for a very long instruction word (VLIW) processor and its relation to the pipeline structure of the processor. The authors first describe the pipeline structure of their processor and analyze its performance and compare it to typical RISC-style pipeline structures given the context of a processor with multiple functional units. Next they study the performance effects of various bypassing schemes in terms of their effectiveness in resolving pipeline data hazards and their effect on the processor cycle time     

Large-deviation inequalities for parameter estimators in stochastic systems

Translated from Kibernetika i Sistemnyi Analiz, No. 2, pp. 95–112, March–April, 1994.     

Changes of the combustion regimes of nongasifying and low-gas systems over the parameter range

The process of combustion of homogeneous and heterogeneous nongasifying and slightly gasifying systems over the range of a number of parameters characterizing the reactive composition and the conditions for the arrangement of the combustion process is studied by using thermocouple and optical methods. The regions of the implementation of different combustion regimes, namely, steady, pulsating, multiple-point, and spin, are determined experimentally.Institute of Structural Macrokinetics, Russian Academy of Sciences, Chernogolovka. Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 65, No. 4, pp. 407–411, October, 1993.