Film Formation in Binary Sol-Gel Systems

The film-forming capacity of binary systems containing Sb₂O₃, SnO₂, CeO₂, Y₂O₃, Nd₂O₃, Bi₂O₃, V₂O₅, ZnO, CuO, CdO, and Al₂O₃ are investigated. The best film-formers are Sb₂O₃ and SnO₂, whereas ZnO, CuO, CdO, and Al₂O₃ cannot produce films of optical quality. The rest of considered oxides do not impair the clarity of coatings when their molding content is 20 – 50%. A proportional dependence is established between the refractive index and the reflection coefficient of a film and the refractive indexes of oxides making parts of this film, as well as between the concentration of deposited FFS, the film-forming capacity of oxides, and the film thickness.     

A New Generation of Steels for Metallic Structures

Metal Science and Heat Treatment -     

Neutron and capture γ-ray accumulation factors in engineering calculations of reactor shielding

Translated from Atomnaya Énergiya, Vol. 66, No. 5, pp. 321–324, May, 1989.     

Analog regulators of the energy-liberation distribution in nuclear reactors

Translated from Atomnaya Énergiya, Vol. 66, No. 2, pp. 81–85, February, 1989.     

Pulse-Frequency Characteristics in Bifurcation Problems

Generation of self-oscillations under unstable stationary states of nonlinear control systems, which may contain delay of complicated nature (the Andronov–Hopf bifurcation), and approximate design of self-oscillating states and their asymptotes are studied with the help of pulse-frequency characteristics of the linear component of a system.     

Integrated optimization of the use of information and hardware resources in data processing systems with controllable message size

The paper considers integrated optimization of a single-server semi-Markov queue with input conflicts, controllable message size, and a finite buffer with different types of storage organization. The optimization is based on an additive performance criterion.Translated from Kibernetika i Sistemnyi Analiz, No. 6, pp. 45–53, November–December, 1991.     

Gigabit pulse position bistability in semiconductor lasers

The paper briefly reviews the major forms of optical bistability in active optical devices compatible for use in gigabit optical communication systems, and reports an entirely new optical bistability for the first time. Unlike previous devices, the two bistable states of the optical device are each a series of picosecond optical pulses at 1 GHz or greater repetition rates, and are distinguished by a half period temporal shift between their temporal positions in relation to a clock pulse. The bistable device is based on a gain switched semiconductor laser. Theoretical studies suggest 100-ps switching speeds might be achieved, and experimental results are reported indicating optically triggered switching times of 500 ps.