The relationship between highly-cited papers and the frequency of citations to other papers within-issue among three top information science journals

Scientometrics - This study investigates a potential relationship between highly-cited scholarly papers and the number of citations received by other papers with which they share a journal issue....     

Steels for Bridge Structures

Metallurgist - We consider domestic and foreign standards for rolled metals used in bridge building. Domestic standards contain elevated requirements to the reliability of rolled metals in terms of...     

Investigation into the Influence of Sodium Lignosulfonate,Anionic Surfactants,and Their Mixtures on the Copper Cementation Rate by Zinc

Russian Journal of Non-Ferrous Metals - This article is devoted to the influence of sodium lignosulfonate (SL), anionic surfactants (sodium dodecylsulfate (SDS), sodium dodecylbenzene sulfonate...     

Precise Extraction of Charge Carrier Mobility for Organic Transistors

Unreliable mobility values, and particularly greatly overestimated values and severely distorted temperature dependences, have recently hampered the development of the organic transistor field. Given that organic field‐effect transistors (OFETs) have been routinely used to evaluate mobility, precise parameter extraction using the electrical properties of OFETs is thus of primary importance. This review examines the origins of the various mobilities that must be determined for OFET applications, the relevant extraction methods, and the data selection limitations, which help in avoiding conceptual errors during mobility extraction. For increased precision, the review also discusses device fabrication considerations, calibration of both the specific gate‐dielectric capacitance and the threshold voltage, the contact effects, and the bias and temperature dependences, which must actually be handled with great care but have mostly been overlooked to date. This review serves as a systematic overview of the OFET mobility extraction process to ensure high precision and will also aid in improving future research.