Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift

A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V.     

The measurement of the diffusion coefficient and the sorption isotherm of water in paint films

An experimental technique together with a numerical model is proposed with which the diffusion coefficient and the sorption isotherm of water in paint can be measured. Inside a closed vessel, paint films are on stainless-steel plates. Water is present as water vapour in the air and in the paint. After blowing dry or wet air through the vessel for some time, the situation moves to a new equilibrium. The relative humidity of the air inside the vessel is measured as a function of time. From fitting the theoretical/numerical model against the experimental values, follow the diffusion coefficient and the sorption isotherm of water in the paint. The results show large scattering. When the independently measured sorption isotherm is used as an input parameter in the model, the fitting procedure gives much smaller scattering for the diffusion coefficient.     

Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Improvement of AlGaInP light emitting diode by sulfide passivation

The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated.     

Stability of the FDTD scheme containing macromodels

Stability analysis of the finite difference time domain scheme containing macromodels is presented. It is shown that for a stable macromodel, the stability of the combined scheme depends on the field interpolation at the macromodel boundary. The maximal allowable time step is shown to be much larger than for subgridding.     

Thermal conductivity of doped PbTe-based solid solutions with off-center impurities

The coefficients of thermopower and electrical and thermal conductivity in the PbTe_0.8Se_0.1 S _0.1 solid solution with electron concentration (4.6–54) × 10¹⁸ cm^?3 are studied in the range of 85–300 K (and in some cases up to 700 K). The temperature dependences of electrical and thermal conductivity indicate that the low-temperature electron and phonon scattering initiated by the off-center impurity of sulfur exists. The temperature dependences of the electronic and lattice components of thermal conductivity are calculated in the approximation of a parabolic spectrum and electron scattering by acoustic phonons and neutral substitutional impurities. The lattice thermal conductivity is found to have a feature in the form of a shallow minimum in the range of 85–250 K. A similar feature, while not so clearly pronounced, is found to exist also in Pb_1?x Sn_xTe_1?x Se_x alloys (x≥0.15) with an off-center tin impurity. An analysis of the possible origins of this effect suggests that, at low temperatures, the Lorentz numbers L of the materials under study are smaller than the L₀ numbers employed which correspond to the above scattering mechanisms. The cause of the decrease in L is related to electron scattering at two-level systems, a mechanism whose effect grows with increasing electron energy. An analysis of experimental data obtained at high temperatures, as well as on undoped samples with the lowest possible carrier concentrations, yields the values of L for samples with different electron densities. The minimum value L/L₀ = 0.75 is obtained for a lightly doped sample at ～130 K.     

Quadrature Mismatch Shaping for Digital-to-Analog Converters

Quadrature sigma-delta analog-to-digital converters require a feedback path for both the I and the Q parts of the complex feedback signal. If two separate multibit feedback digital-to-analog converters (DACs) are used, mismatch among the unit DAC elements leads to additional mismatch noise in the output spectrum as well as an I/Q imbalance. This paper proposes new quadrature bandpass (QBP) mismatch shaping techniques. In our approach, the I and Q DACs are merged into one complex DAC, which leads to near-perfect I/Q balance. To select the unit DAC elements of the complex multibit DAC, the well-known butterfly shuffler and tree structure are generalized towards a complex structure, and necessary constraints for their correct functioning are derived. Next, a very efficient first-order QBP shaper implementation is proposed. Finally, the newly presented complex structures are simulated to prove their effectiveness and are compared with each other with respect to performance     

Discrete Chaos-I: Theory

We propose a definition of the discrete Lyapunov exponent for an arbitrary permutation of a finite lattice. For discrete-time dynamical systems, it measures the local (between neighboring points) average spreading of the system. We justify our definition by proving that, for large classes of chaotic maps, the corresponding discrete Lyapunov exponent approaches the largest Lyapunov exponent of a chaotic map when M/spl rarr//spl infin/, where M is the cardinality of the discrete phase space. In analogy with continuous systems, we say the system has discrete chaos if its discrete Lyapunov exponent tends to a positive number, when M/spl rarr//spl infin/. We present several examples to illustrate the concepts being introduced.     

Nondiffusive weak localization in two-dimensional systems with spin-orbit splitting of the spectrum

The effect of spin splitting caused by structural asymmetry (Rashba’s contribution) and bulk asymmetry (Dresselhaus’s contribution) on the magnetoconductance of two-dimensional structures with high mobility of charge carriers is studied. The theory of weak localization with regard to both of the contributions is developed. The theory is valid in the entire region of classically low magnetic fields for arbitrary relations between the frequencies of spin precession and elastic collisions. The suppression of the correction for antilocalization is demonstrated in the case of equal contributions of structural anisotropy and bulk anisotropy to the spin splitting. The effect of the contribution, cubic in the wave vector, to the spin splitting on the quantum magnetoresistance is studied.     

Nash equilibria of packet forwarding strategies in wireless ad hoc networks

In self-organizing ad hoc networks, all the networking functions rely on the contribution of the participants. As a basic example, nodes have to forward packets for each other in order to enable multihop communication. In recent years, incentive mechanisms have been proposed to give nodes incentive to cooperate, especially in packet forwarding. However, the need for these mechanisms was not formally justified. In this paper, we address the problem of whether cooperation can exist without incentive mechanisms. We propose a model,based on game theory and graph theory to investigate equilibrium conditions of packet forwarding strategies. We prove theorems about the equilibrium conditions for both cooperative and noncooperative strategies. We perform simulations to estimate the probability that the conditions for a cooperative equilibrium hold in randomly generated network scenarios.. As the problem is involved, we deliberately restrict ourselves to a static configuration. We conclude that in static ad hoc networks where the relationships between the nodes are likely to be stab le-cooperation needs to be encouraged.