Purification and renaturation of recombinant human lymphotoxin (tumour necrosis factor beta) expressed in Escherichia coli as inclusion bodies

High level expression of recombinant human tumour necrosis factor β (rh TNF-β) in Escherichia coli results in the formation of two portions of protein, namely soluble active protein and insoluble protein which is inactive and aggregates in the form of inclusion bodies (IBs). In this study, a procedure for purification and renaturation of rh TNF-β from inclusion bodies has been designed and verified experimentally with a product purity of more than 90% and a recovery of about 30%. The procedure includes washing of IBs with specific wash buffer (Triton X-100/EDTA/lysozyme/PMSF), their solubilization with 8 mol dm^?3 alkaline urea, purification with ion-exchange columns, refolding with renaturation buffer and finally concentration and desalination with an ultrafiltration membrane. The characteristics of the renatured protein were identical with those of purified protein from the soluble fraction as demonstrated by (1) SDS-PAGE, (2) cytotoxic activity on mouse L929 cells, (3) N-terminal amino acid sequence, and (4) gel filtration chromatography.     

TEM method for rapid and precise evaluation of continuous recrystallization

With the aid of a double-tilt holder in a transmission electron microscope, a new method for a rapid and precise determination of the misorientations of a large number of subgrain or grain boundaries is given in this article. By use of the method, the continuous recrystallization can be rapidly and precisely evaluated when compared to the other conventional methods.     

计算机网络安全体系的研究

首先,结合国内外同行的最新研究成果,我们将对网络系统中的不安全因素加以分析,并形式化地给出一个安全计算机网络系统的定义;然后将从理论上阐述一个基于OSI-RM体系的网络安全保护体系的模型,并讨论该安全保护体系在现有系统中的作用。     

Monolithic SiGe Up‐/Down‐Conversion Mixers with Active Baluns

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on‐chip 1 to 6 GHz up‐conversion and 1 to 8 GHz down‐conversion mixers using a 0.8 µm SiGe hetero‐junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up‐conversion mixer was implemented on‐chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up‐conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down‐conversion mixer was implemented on‐chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down‐conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.     

基于TMS320C6x实现多载波QPSK信号全数字化整体解调

提出并证明了一种群路FDMA/QPSK(频分多址/正交相移键控)信号全数字化整体解调的新方法,该方法根据信道构成特点和信号调制方式,将直接分路法和常规多相FFT(快速傅里叶变换)分离法相结合,构成了一种简化的等效多相FFT分路方法,再将输出的数字信号送到数字式解调器,实现了多载波信号的全数字化整体解调,其特点是软件和硬件结构简单、系统计算量小,且易于DSP实时实现,现已用该算法进行了32路FDMA/QPSK信号整体解调的计算机仿真实验,结果表明该方法是可行的.     

Computational Implementation of Asymmetric Integral Imaging by Use of Two Crossed Lenticular Sheets

We propose an asymmetric integral imaging method to adjust the resolution and depth of a three‐dimensional image. Our method is obtained by use of two lenticular sheets with different pitches fabricated under the same F/#. The asymmetric integral imaging is the generalized version of integral imaging, including both conventional integral imaging and one‐dimensional integral imaging. We present experimental results to test and verify the performance of our method computationally.     

Microstructural evolution of lead-free Sn-Bi-Ag-Cu SMT joints during aging

It was reported in a previous study that the Sn-6Bi-2Ag-0.5Cu solder alloy had great potential to replace leaded alloys. This alloy was prepared by mechanical alloying, and had the advantage of providing a high percentage of supersaturate solution of bismuth in tin. In the present paper, the microstructural evolution of surface-mount joints during aging was examined. In the as-soldered joints, small bismuth and Ag₃Sn particles of about 1 mum in size were found to be finely dispersed in a nearly pure tin matrix with a small amount of eta-Cu₆Sn₅ phase in the bulk of solder. During aging, microstructural evolution of solder joints occurred. These include Cu-Sn intermetallic compound (IMC) layer growth at the interface between solder and copper pad on the printed circuit board, as well as bismuth phase and Ag₃Sn phase coarsening. The shear strength of the solder joints decreased parabolically with the increase in IMC layer thickness, such that tau_s=22.22-radic22.05(t-1.88), where tau_s is the shear strength in MPa and t (>1.88) is the total IMC layer thickness in micrometers. The microstructure of solder appeared to be stable under aging at elevated temperatures up to about 160degC. Above this temperature, brittle and porous IMC epsiv-Cu₃Sn appeared at the copper/eta-Cu₆Sn ₅ interface. Fracture was found to occur at the Cu-Sn IMC layer-solder interface and in the bulk of solder     

Impact of nonuniform graded dopant profile in polysilicon gate on gate leakage current

In a MOSFET, a nonuniform, graded vertical dopant profile in the polysilicon gate causes a potential drop at the polysilicon/oxide interface. In this paper, the effect of this potential drop on the gate leakage current has been evaluated for the first time. The extent of variations of this affected gate leakage current with gate oxide thickness, gate length, and gate and drain bias conditions have been assessed with device simulation for an nMOS at 0.13 /spl mu/m low-voltage process. The results provide a guideline to the severity of this effect from the point of view of device and circuit operation and standby power consumption.     

高层建筑屋面悬挑曲梁结构施工技术

本文通过工程实例,说明采用型钢和钢管组合支撑体系,解决高层建筑屋面悬挑曲梁结构的支模难题,保证工程质量和施工安全,并探讨施工中型钢的节点连接做法。     

A Silicon–Silica Nanocomposite Material

The synthesis and characterization of a novel silicon–silica nanocomposite material are reported. A self‐assembly method allows the encapsulation of silicon nanoclusters within the channels of a periodic mesoporous silica thin film. The result is the formation of a silicon–silica nanocomposite film with bright, room‐temperature photoluminescence in the visible range, and a nanosecond luminescence lifetime. The properties of the nanocomposite material have been studied by several analytical techniques, which collectively show the existence within the channels of non‐diamondoid‐structure‐type silicon nanoclusters with various hydrogenated silicon sites. It is estimated that the silicon nanoclusters in the silica mesoporous films occupy up to 39 % of the accessible pore volume. The nanocomposite film shows improved resistance to air oxidation compared to crystalline silicon. The high loading and chemical stability to oxidation under ambient conditions are important advantages in terms of the development of silicon‐based light‐emitting diodes from this class of materials.