Improving TCP performance over wireless networks at the link layer

We present the transport unaware link improvement protocol (TULIP), which dramatically improves the performance of TCP over lossy wireless links, without competing with or modifying the transport- or network-layer protocols. TULIP is tailored for the half-duplex radio links available with today's commercial radios and provides a MAC acceleration feature applicable to collision-avoidance MAC protocols (e.g., IEEE 802.11) to improve throughput. TULIP's timers rely on a maximum propagation delay over the link, rather than performing a round-trip time estimate of the channel delay. The protocol does not require a base station and keeps no TCP state. TULIP is exceptionally robust when bit error rates are high; it maintains high goodput, i.e., only those packets which are in fact dropped on the wireless link are retransmitted and then only when necessary. The performance of TULIP is compared against the performance of the Snoop protocol (a TCP-aware approach) and TCP without link-level retransmission support. The results of simulation experiments using the actual code of the Snoop protocol show that TULIP achieves higher throughput, lower packet delay, and smaller delay variance. This revised version was published online in June 2006 with corrections to the Cover Date.     

Chronic measurement of the stimulation selectivity of the flat interface nerve electrode

The flat interface nerve electrode (FINE) is an attempt to improve the stimulation selectivity of extraneural electrodes. By reshaping peripheral nerves into elliptical cylinders, central fibers are moved closer to the nerve-electrode interface, and additional surface area is created for contact placement. The goals of this study were to test the hypothesis that greater nerve reshaping leads to improved selectivity and to examine the chronic recruitment properties of the FINE. Three FINEs were developed to reshape peripheral nerves to different degrees. Four electrodes of each type were implanted on the sciatic nerves of 12 cats and tested for selectivity over at least three months. There was physiologic evidence of nerve injury in two cats with the tightest cuffs, but the other animals behaved normally. All cuff types were capable of selectively activating branches of the sciatic nerve, as well as groups of fibers within branches. The electrodes that moderately reshaped the nerves demonstrated the most selectivity. Both the selectivity measurements and the recruitment curve characteristics were stable throughout the implant period. From an electrophysiological standpoint, the FINE is a viable alternative for neuroprosthetic devices. A histological analysis of the nerves is under way to evaluate the safety of the FINE.     

On the Feasibility of Growing Pb[(Zn1/3Nb2/3)0.91Ti0.09]O3 Single Crystals

Pb[(Zn_1/3Nb_2/3)_0.91Ti_0.09]O₃ (PZNT91/9) single crystals were grown by two methods: from solution using PbO as a self‐fluxing agent (SC method) and directly from the melt without fluxing (MC method). In both growth methods, an allomeric Pb[(Mg_1/3‐Nb_2/3)_0.69Ti_0.31]O₃ (PMNT69/31) single crystal was used as a seed. X‐ray diffraction patterns of ground crystals showed that phase‐pure perovskite PZNT91/9 single crystals were successfully fabricated by the above two methods. The composition of the crystals obtained by both the SC and MC methods was analyzed using X‐ray fluorescence, which confirmed that the crystal composition is close to the nominal value, although volatilization of PbO and segregation during crystal growth are inevitable. The MC PZNT91/9 crystals exhibit excellent piezoelectric properties, with the piezoelectric constant, d₃₃, in the range of 1800–2200 pC N^–1. This value is comparable to that of the SC crystals. However, the MC crystals show an abnormal dielectric behavior. In contrast with the SC crystals, in the MC crystals a much broader dielectric peak appears in the dielectric response curves, accompanied by a much lower peak temperature of around 105 °C. Furthermore, frequency dispersion is apparent over a much wider temperature range (even more apparent than in pure relaxors), where a large, i.e., about 70 °C, full width at half maximum (FWHM) for the dielectric peaks is observed in the dielectric response. It is speculated that such an unusual phenomenon correlates with defects, microinhomogeneities, and polar regions in the as‐grown MC crystals. The origins of this abnormality have not been interpreted in detail until now. However, optical observation of the domain structure confirms that both the SC and MC crystals possess complex structural states.     

Relating the Morphology of Poly(p‐phenylene vinylene)/Methanofullerene Blends to Solar‐Cell Performance

The performance of bulk‐heterojunction solar cells based on a phase‐separated mixture of donor and acceptor materials is known to be critically dependent on the morphology of the active layer. Here we use a combination of techniques to resolve the morphology of spin cast films of poly(p‐phenylene vinylene)/methanofullerene blends in three dimensions on a nanometer scale and relate the results to the performance of the corresponding solar cells. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and depth profiling using dynamic time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) clearly show that for the two materials used in this study, 1‐(3‐methoxycarbonyl)propyl‐1‐phenyl‐[6,6]‐methanofullerene (PCBM) and poly[2‐methoxy‐5‐(3′,7′‐dimethyloctyloxy)‐1,4‐phenylene vinylene] (MDMO‐PPV), phase separation is not observed up to 50 wt.‐% PCBM. Nanoscale phase separation throughout the film sets in for concentrations of more than 67 wt.‐% PCBM, to give domains of rather pure PCBM in a homogenous matrix of 50:50 wt.‐% MDMO‐PPV/PCBM. Electrical characterization, under illumination and in the dark, of the corresponding photovoltaic devices revealed a strong increase of power conversion efficiency when the phase‐separated network develops, with a sharp increase of the photocurrent and fill factor between 50 and 67 wt.‐% PCBM. As the phase separation sets in, enhanced electron transport and a reduction of bimolecular charge recombination provide the conditions for improved performance. The results are interpreted in terms of a model that proposes a hierarchical build up of two cooperative interpenetrating networks at different length scales.     

Enhanced Photoelectrochemistry in CdS/Au Nanoparticle Bilayers

Three different configurations of Au‐nanoparticle/CdS‐nanoparticle arrays are organized on Au/quartz electrodes for enhanced photocurrent generation. In one configuration, Au‐nanoparticles are covalently linked to the electrode and the CdS‐nanoparticles are covalently linked to the bare Au‐nanoparticle assembly. The resulting photocurrent, φ = 7.5 %, is ca. 9‐fold higher than the photocurrent originating from a CdS‐nanoparticle layer that lacks the Au‐nanoparticles, φ = 0.8 %. The enhanced photocurrent in the Au/CdS nanoparticle array is attributed to effective charge separation of the electron–hole pair by the injection of conduction‐band electrons from the CdS‐ to the Au‐nanoparticles. Two other configurations involving electrostatically stabilized bipyridinium‐crosslinked Au/CdS or CdS/Au nanoparticle arrays were assembled on the Au/quartz crystal. The photocurrent quantum yields in the two systems are φ = 10 % and φ = 5 %, respectively. The photocurrents in control systems that include electrostatically bridged Au/CdS or CdS/Au nanoparticles by oligocationic units that lack electron‐acceptor units are substantially lower than the values observed in the analogous bipyridinium‐bridged systems. The enhanced photocurrents in the bipyridinium‐crosslinked systems is attributed to the stepwise electron transfer of conduction‐band electrons to the Au‐nanoparticles by the bipyridinium relay bridge, a process that stabilizes the electron–hole pair against recombination and leads to effective charge separation.     

A 15 nm Ultra‐thin Body SOI CMOS Device' with Double Raised Source/Drain for 90 nm Analog Applications

Fully‐depleted silicon‐on‐insulator (FD‐SOI) devices with a 15 nm SOI layer thickness and 60 nm gate lengths for analog applications have been investigated. The Si selective epitaxial growth (SEG) process was well optimized. Both the singleraised (SR) and double‐raised (DR) source/drain (S/D) processes have been studied to reduce parasitic series resistance and improve device performance. For the DR S/D process, the saturation currents of both NMOS and PMOS are improved by 8 and 18%, respectively, compared with the SR S/D process. The self‐heating effect is evaluated for both body contact and body floating SOI devices. The body contact transistor shows a reduced self‐heating ratio, compared with the body floating transistor. The static noise margin of an SOI device with a 1.1 µm² 6T‐SRAM cell is 190 mV, and the ring oscillator speed is improved by 25 % compared with bulk devices. The DR S/D process shows a higher open loop voltage gain than the SR S/D process. A 15 nm ultra‐thin body (UTB) SOI device with a DR S/D process shows the same level of noise characteristics at both the body contact and body floating transistors. Also, we observed that noise characteristics of a 15 nm UTB SOI device are comparable to those of bulk Si devices.     

Design of Scannable Non‐uniform Planar Array Structure for Maximum Side‐Lobe Reduction

In this letter, we propose a novel design scheme for an optimal non‐uniform planar array geometry in view of maximum side‐lobe reduction. This is implemented by a thinned array using a genetic algorithm. We show that the proposed method can maintain a low side‐lobe level without pattern distortion during beam steering.     

An Analog Front‐End Circuit for ISO/IEC 14443‐Compatible RFID Interrogators

An analog front‐end circuit for ISO/IEC 14443‐compatible radio frequency identification (RFID) interrogators was designed and fabricated by using a 0.25 µm double‐poly CMOS process. The fabricated chip was operated using a 3.3 Volt single‐voltage supply. The results of this work could be provided as reusable IPs in the form of hard or firm IPs for designing single‐chip ISO/IEC 14443‐compatible RFID interrogators.     

Error Concealment Based on Semantic Prioritization with Hardware‐Based Face Tracking

With video compression standards such as MPEG‐4, a transmission error happens in a video‐packet basis, rather than in a macroblock basis. In this context, we propose a semantic error prioritization method that determines the size of a video packet based on the importance of its contents. A video packet length is made to be short for an important area such as a facial area in order to reduce the possibility of error accumulation. To facilitate the semantic error prioritization, an efficient hardware algorithm for face tracking is proposed. The increase of hardware complexity is minimal because a motion estimation engine is efficiently re‐used for face tracking. Experimental results demonstrate that the facial area is well protected with the proposed scheme.     

ZCZ‐CDMA and OFDMA using M‐QAM for broadband wireless communications

This paper considers direct‐sequence code‐division multiple‐access with zero‐correlation zone sequences (ZCZ‐CDMA) and orthogonal frequency‐division multiple‐access (OFDMA) schemes using M‐ary QAM signaling for broadband wireless communications. Their system structures, complexities and performances in both AWGN and multipath frequency‐selective fading channels are evaluated and compared. For ZCZ‐CDMA, joint suppression of the multipath fading interference and multiple‐access interference can be achieved with a reduced family‐size of the spreading sequences. For OFDMA, analytical and simulation results indicate that it has the same performance as ZCZ‐CDMA in fast time‐varying multipath fading channels. In time‐invariant or slowly time‐varying channels, where the channel information can be made available to transmitters, OFDMA outperforms ZCZ‐CDMA, offers a higher capacity and is more flexible for system reconfiguration with a comparable computational complexity. Copyright © 2004 John Wiley & Sons, Ltd.