Gasification kinetics of oil sands coke

Kinetics of steam gasification of delayed and fluid cokes derived from Athabasca bitumen have been studied in 6.35 cm diameter stirred and fixed bed reactors. Experiments were carried out at atmospheric pressure and at temperatures between 800°C and 930°C. The coke particle size ranged from 0.1 to 3.5 mm, and the steam partial pressure was varied from 15.2 to 60.6 kPa. Scanning electron microscopy, surface area analysis, and mercury porosimetry were employed to relate physical structure changes in the solids to experimental kinetic data. Several kinetic models for gasification were tested with the experimental gasification data. Rate expressions are presented for carbon conversion and for the release of sulphur.     

Numerical and experimental analysis of large passivation opening for solder joint reliability improvement of micro SMD packages

In this paper, using a recently developed solder fatigue model for wafer level-chip scale package (WL-CSP), we investigated the improvement on solder joint reliability for a 8-bump micro SMD package by enlarging the passivation layer opening at the solder–die interface. The motivation to enlarge the passivation opening is to reduce the severity of the stress concentration caused by the original design, and also to increase the contact area between the solder bump and aluminum bump pad. It was confirmed in the thermal shock test that with the new design, package fatigue life improved by more than 70%. To numerically predict this improvement represents a unique challenge to the modeling. This is because in order to capture the slightest geometrical difference on the order of a few microns between the two designs, the multiple-layer solder-die interface needs to be modeled using extremely fine mesh, while the overall dimensions of the package and the test board are on the order of millimeters. To bridge this tremendous gap in geometry, a single finite element model that incorporates all necessary geometrical details is deemed computationally prohibitive and impractical. In this paper, we applied a global–local modeling scheme that was also suggested by others [1, 2 and 3]. The global model contains the complete package with much simplified solder–die interface whereas the local model includes only one solder joint, but with detailed solder–die interface. Unlike most global–local models proposed by others, we included time-independent plasticity and temperature-dependent materials in the global model. This greatly improved model correlation accuracy with only moderate increase in run time. Energy-based solder fatigue model was used to correlate the inelastic strain energy with the package fatigue life. In an earlier study [4], we have found that Darveaux’s equations tended to be conservative when applied to the micro SMD, and hence new correlations based on curve-fitting the test data were derived. In this paper, we used the newly derived equation and achieved less than 20% error in N₅₀ life for both designs, which is on par with Darveaux’s equations when used for BGAs. The analysis also revealed two factors that may account for the life improvement. First, a slight decrease in inelastic energy dissipation after enlarging the passivation opening. Second, the shift of the crack initiation location which leads to longer crack growth length for the new design. The second factor was also independently confirmed by the failure analysis.     

Dispersion characteristics of the broadside-coupled coplanarwaveguide

The dispersive properties for the even- and odd-modes of the broadside-coupled coplanar waveguide (CPW) are determined using the spectral domain method. Various numerical results of the even- and odd-mode effective dielectric constants as a function of frequency are presented and discussed. It is found that the structure has a very weak dispersion. This fact is further confirmed through a comparison between the calculated dynamic and quasi-static results of the even- and odd-mode effective dielectric constants. The low dispersion feature signifies the fact that the quasi-static analysis is adequate for designing practical microwave and millimeter-wave circuits employing broadside-coupled CPW     

On the effects of a spacecraft subcarrier unbalanced modulator

This paper presents mathematical models with associated analysis of the deleterious effects which a spacecraft's subcarrier unbalanced modulator has on the performance of a phase-modulated residual carrier communications link. The undesired spectral components produced by the phase and amplitude imbalances in the subcarrier modulator can cause (1) potential interference to the carrier tracking and (2) degradation in the telemetry bit signal-to-noise ratio (SNR). A suitable model for the unbalanced modulator is developed and the threshold levels of undesired components that fall into the carrier tracking loop are determined. The distribution of the carrier phase error caused by the additive White Gaussian noise (AWGN) and undesired component at the residual RF carrier is derived for the limiting cases. Further, this paper analyses the telemetry bit signal-to-noise ratio degradations due to undesirable spectral components as well as the carrier tracking phase error induced by phase and amplitude imbalances. Numerical results which indicate the sensitivity of the carrier tracking loop and the telemetry symbol-error rate (SER) to various parameters of the models are also provided as a tool in the design of the subcarrier balanced modulator.     

Substrate issues for the growth of mercury cadmium telluride

Close lattice matching and lattice compatibility with mercury cadmium telluride (MCT) make CdTe and related alloys ideal substrate materials for growth of MCT layers for the purpose of making high-performance second-generation infrared detectors. However, the limitations in the properties of CdTe and the difficulties in its bulk growth have prompted extensive research in the area of alternative substrates. Some basic relevant characteristics of substrates such as sapphire, GaAs, and silicon are compared and the possibilities and problems associated with each material are analyzed in the light of the most recent results in the field.     

Cognitive amplify‐and‐forward relay networks with beamforming under primary user power constraint over Nakagami‐m fading channels

In this paper, we analyze the performance of cognitive amplify‐and‐forward (AF) relay networks with beamforming under the peak interference power constraint of the primary user (PU). We focus on the scenario that beamforming is applied at the multi‐antenna secondary transmitter and receiver. Also, the secondary relay network operates in channel state information‐assisted AF mode, and the signals undergo independent Nakagami‐m fading. In particular, closed‐form expressions for the outage probability and symbol error rate (SER) of the considered network over Nakagami‐m fading are presented. More importantly, asymptotic closed‐form expressions for the outage probability and SER are derived. These tractable closed‐form expressions for the network performance readily enable us to evaluate and examine the impact of network parameters on the system performance. Specifically, the impact of the number of antennas, the fading severity parameters, the channel mean powers, and the peak interference power is addressed. The asymptotic analysis manifests that the peak interference power constraint imposed on the secondary relay network has no effect on the diversity gain. However, the coding gain is affected by the fading parameters of the links from the primary receiver to the secondary relay network. Copyright © 2012 John Wiley & Sons, Ltd.     

Required bandwidth, unwanted emission, and data power efficiencyfor residual and suppressed carrier systems-a comparative study

This paper presents a new concept for required bandwidth along with a method for computing this bandwidth and the associated undesired emission for the classes of PCM/PSK/PM, PCM/PM and BPSK signals. The PCM/PSK/PM signals considered here employ either a square wave or sine-wave subcarrier with NRZ data format. On the other hand, the PCM/PM and BPSK signals use either a Bi-phase or an NRZ data format. Furthermore, the maximum allowable required bandwidth in the presence of noise and the data power efficiency for these modulation schemes will also be investigated. The term “data power efficiency” as considered in this paper consists of two principal components, namely, the amount of power contained in the data channel, and the symbol signal-to-noise ratio (SSNR) degradation due to the presence of intersymbol interference (ISI) for a specified required bandwidth. This paper evaluates both of these components numerically for the modulation schemes considered and the results are then compared. Furthermore, the impact of baseband filtering on the required bandwidth is also investigated in this paper     

New look on relay selection strategies for full-duplex multiple-relay NOMA over Nakagami-m fading channels

Wireless Networks - By removing the orthogonal use of radio-resources, non-orthogonal multiple access (NOMA) has been introduced to improve the spectral efficiency of fifth generation (5G) and...     

Compression artifacts reduction with multiscale tensor regularization

Multidimensional Systems and Signal Processing - We study a multiscale tensor regularization based JPEG decompression artifact removal in digital images. Structure tensor eigenvalues based robust...     

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

A quantum‐tunneling metal‐insulator‐metal (MIM) diode is fabricated by atmospheric pressure chemical vapor deposition (AP‐CVD) for the first time. This scalable method is used to produce MIM diodes with high‐quality, pinhole‐free Al₂O₃ films more rapidly than by conventional vacuum‐based approaches. This work demonstrates that clean room fabrication is not a prerequisite for quantum‐enabled devices. In fact, the MIM diodes fabricated by AP‐CVD show a lower effective barrier height (2.20 eV) at the electrode–insulator interface than those fabricated by conventional plasma‐enhanced atomic layer deposition (2.80 eV), resulting in a lower turn on voltage of 1.4 V, lower zero‐bias resistance, and better asymmetry of 107.