Deep Q-network-based auto scaling for service in a multi-access edge computing environment

In 5G networks, it is necessary to provide services while meeting various service requirements, such as high data rates and low latency, in response to dynamic network conditions. Multi-access edge computing (MEC) is a promising concept to meet these requirements. The MEC environment enables service providers to deploy their low latency services that are composed of multiple components. However, operating a service manually and attempting to satisfy the quality of service (QoS) requirements is difficult because many factors need to be considered in an MEC scenario. In this paper, we propose an auto-scaling method using deep Q-networks (DQN), which is a reinforcement learning algorithm, to resize the number of instances assigned to service. In our evaluation, compared to other baseline methods, the proposed approach maintains the appropriate number of instances effectively in response to dynamic traffic change while satisfying QoS and minimizing the cost of operating the service in the MEC environment. The proposed method was implemented as a module running in OpenStack and published as open-source software.     

System integration of high voltage electrostatic MEMS actuators

A system integration for High Voltage (HV) electrostatic MicroElectroMechanical Systems (MEMS) actuators is introduced on a micro-Printed Circuit Board. The system includes a programmable microcontroller, a programmable DC/DC converter, a multi output HV interface and electrostatic MEMS actuators. The system produces high output voltages (10–300 V) and can control a large variety of MEMS capacitive loads (1 to 50 pF) by combining diverse semiconductor technologies. This system proves that technologies, such as low voltage CMOS of different processes, high voltage DMOS and MEMS, can interact, communicate and even be integrated as a System In Package (SIP), providing significant size and cost reductions. The system was programmed to control electrostatic MEMS actuator. The DC/DC converter was made from components of different technologies and two addressable high voltage CMOS interfaces were fabricated with DALSA's 0.8 μm High Voltage process. A prototype of the global system has been built and tested.     

Microstructure control of copper films by the addition of molybdenum in an advanced metallization process

The effect of annealing on the resistivity, morphology, microstructure, and diffusion characteristics of Cu(Mo)/SiO₂/Si and Ti/Cu(Mo)/SiO₂/Si multilayer films has been investigated in order to deterine the role of Mo. In the case of a Cu(Mo)/SiO₂/Si multilayer, most of the Mo diffused out to the free surface to form MoO₃ at temperatures up to 500 C, and complete dissociation of Mo occurred at higher temperatures. The segregation of Mo to the external surface leads to Mo-free Cu films with extensive grain growth up to 20 times the original grain size and strong (111) texture. In the case of a Ti/Cu(Mo)/SiO₂/Si multilayer, a thin Ti film prohibits Cu agglomeration, out-diffusion of Mo, and diffusion of Cu into SiO₂ at temperatures up to 750 C. Cu(Mo) grain growth was less extensive, but (111) fiber texturing was much stronger than in the case of Cu(Mo)/SiO₂/Si. In the current study, significant changes in microstructure, such as a strong (111) texture and abnormal grain growth, have been obtained by adding Mo to Cu films when the films are annealed.     

Paraxial approximation effect on a dielectric interface analysis

We are presenting a fast new method of analysing a dielectric interface which is assumed to be cylindrically symmetrical. It is based on a multimode Gaussian beam development. Then two different cases are considered and we show the kind of results we can expect from this process. Finally, we explain in detail the relationships between the paraxial approximation and further justified simplifications which lead to an important calculation time decrease.     

A model for hot-electron-induced MOSFET linear-current degradationbased on mobility reduction due to interface-state generation

A simple model for the hot-electron degradation of MOSFET linear-current drive is developed on the basis of the reduction of the inversion-layer mobility due to the generation of interface states. The model can explain the observed dependence of the device hot-electron lifetime on the effective channel length and oxide thickness by taking into account both the relative nonscalability of the localized damage region and the dependence of the linear-current degradation on the effective vertical electric field E_eff. The model is verified for deep-submicrometer non-LDD n-channel MOSFETs with L_eff=0.2-1.5 μm and T_ox=3.6-21.0 nm. From the correlation between linear-current and charge-pumping degradation, the scattering coefficient α, which relates the number of generated interface states to the corresponding amount of inversion-layer mobility reduction, can be extracted and its dependence on E_eff determined. Using this linear-current degradation model, existing hot-electron lifetime prediction models are modified to account explicitly for the effects of L_eff and T _ox     

Classification of Spectral Patterns Obtained from Eustachian Tube Sonometry

Spectral patterns of sound transmission through the Eustachian tube (ET) have been obtained in a series of experiments designed to identify ET dysfunction. Previous studies of ET function using sonometry have relied on heuristic and somewhat arbitrary methods in interpreting the data. In this study, an automated classification algorithm was developed to separate these sonograms into three distinct groups. From a total of 150 sample spectra, 75 were used in the formation of learning sets. The remaining spectra were classified into these three groups using standard Bayesian techniques. Both parametric and nonparametric methods were applied in estimating conditional probability density functions. Results of classification are compared with an independent test of ET function. Agreement between our classifier and the results of the independent test was as good as 97.3 percent. The results of this study indicate that an automated classification procedure can effectively distinguish among the three major types of sonograms obtained from ET sonometry.     

Hybrid ring coupler for W-band MMIC applications using MEMS technology

The hybrid ring coupler was designed and fabricated on a GaAs substrate using surface micromachining techniques, which adopted dielectric-supported air-gapped microstrip line (DAML) structure. The fabrication process of DAML is compatible with the standard monolithic microwave integrated circuit (MMIC) techniques, and the hybrid ring coupler can be simply integrated into a plane-structural MMIC. The fabricated hybrid ring coupler shows wideband characteristics of the coupling loss of 3.57 /spl plusmn/ 0.22dB and the transmission loss of 3.80 /spl plusmn/ 0.08dB across the measured frequency range of 85 to 105GHz. The isolation characteristics and output phase differences are -34dB and 180/spl plusmn/1/spl deg/, at 94GHz, respectively.