首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   176885篇
  免费   2136篇
  国内免费   704篇
电工技术   3290篇
综合类   103篇
化学工业   27878篇
金属工艺   7776篇
机械仪表   5120篇
建筑科学   4409篇
矿业工程   875篇
能源动力   4677篇
轻工业   16375篇
水利工程   1702篇
石油天然气   3126篇
武器工业   2篇
无线电   19845篇
一般工业技术   33315篇
冶金工业   33106篇
原子能技术   4291篇
自动化技术   13835篇
  2021年   1312篇
  2019年   1246篇
  2018年   2095篇
  2017年   2077篇
  2016年   2186篇
  2015年   1570篇
  2014年   2716篇
  2013年   7783篇
  2012年   4551篇
  2011年   6361篇
  2010年   5034篇
  2009年   5882篇
  2008年   5860篇
  2007年   5837篇
  2006年   5012篇
  2005年   4680篇
  2004年   4472篇
  2003年   4143篇
  2002年   4101篇
  2001年   4125篇
  2000年   3922篇
  1999年   4054篇
  1998年   10380篇
  1997年   7390篇
  1996年   5653篇
  1995年   4281篇
  1994年   3617篇
  1993年   3564篇
  1992年   2604篇
  1991年   2537篇
  1990年   2416篇
  1989年   2435篇
  1988年   2376篇
  1987年   2127篇
  1986年   2066篇
  1985年   2368篇
  1984年   2185篇
  1983年   2012篇
  1982年   1880篇
  1981年   1944篇
  1980年   1796篇
  1979年   1816篇
  1978年   1776篇
  1977年   2108篇
  1976年   2688篇
  1975年   1557篇
  1974年   1549篇
  1973年   1607篇
  1972年   1350篇
  1971年   1262篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
991.
We derive an effective single-band Hubbard type Hamiltonian for CuO2 planes. The Hamiltonian includes both electron-electron repulsion and electron-phonon coupling to oxygen vibrational modes. We start with first-principles density functional theory parameters and then map onto a single-band model. Unlike previous mappings to a single-band Hamiltonian, ours explicitly preserves the Fermi surface shape and matrix elements of the many-band Hamiltonian. We consider both in-plane oxygen breathing modes as well as out-of-plane tilting modes. The latter modes have a quadratic electron-phonon coupling, and are also highly anharmonic in La2CuO4 based superconductors. The coupling to breathing modes is too small to account for highT c, while the coupling to quadratic modes is much stronger even though they would be neglected in a standard Migdal-Eliashberg approach to superconductivity.  相似文献   
992.
Highlights key considerations that should be addressed by consulting psychologists to demonstrate the value of assessment services that they provide to clients. Executive and managerial assessment (EMA) is done in a variety of contexts, at multiple levels, and for multiple purposes. In order to demonstrate the value of EMA, it is suggested that consultants present a 2-part framework of evidence to decision makers. First, they should present the results of utility analysis, using the very best parameter estimates available. Second, they should present a detailed linkage of essential job tasks to required knowledge, skills, abilities, and other characteristics (KSAOs). Then, KSAOs should be linked to instruments of prediction back to essential job tasks. Value is therefore demonstrated in 2 ways: in financial terms as well as by presenting construct-oriented evidence of validity. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
993.
双波长Nd:YAG脉冲激光器的实验研究   总被引:8,自引:1,他引:7  
根据多波长同时振荡条件,我们建立了大能量1064nm和1318nm同时运转的双波长脉冲Nd:YAG激光器。得到了1064nm和1318nm的激光输出能量分别为0.594J和0.861J,效率分别为0.31%和0.45%。实验结果说明了该双波长激光器有较好的时间和空间重选性。  相似文献   
994.
Centralized and distributed automated guided vehicle system (AGVS) models for materials handling, and the model for part processing are integrated into a single coherent model. This formulation can be used to collectively schedule and control the entire flexible manufacturing system (FMS) as opposed to the traditional separate scheduling of part processing and material handling. The two AGVS models are based on Petri nets and can be directly used in the scheduling method that uses Petri nets for formulation and heuristic search for solution. This method employs a global search to seek the optimal operation of an entire FMS. Scheduling examples are presented and the method compares favorably with the results simulated using heuristic dispatch rules  相似文献   
995.
The manufacturing message specification (MMS) is the ISO standard communication protocol specific to manufacturing. To analyze MMS design and performance, service unit automats are introduced to represent individual MMS services, while service connection Petri Nets (PNs) are constructed from these automats to describe MMS service connections and processes. This approach makes MMS protocol specification and analysis possible in terms of well-developed concepts and methods in PN theory. It leads to a distributed and hierarchical model of MMS software system by integrating service connection PNs. A generalized stochastic PN for MMS performance evaluation is obtained by incorporating service parameters and time factors into the model. A technique based on T-invariants is used to simplify the performance analysis  相似文献   
996.
Enhanced performance is demonstrated in n-type metal-oxide-semiconductor field-effect transistors with channel regions formed by pseudomorphic growth of strained Si on relaxed Si1-xGex. Standard MOS fabrication techniques were utilized, including thermal oxidation of the strained Si. Surface channel devices show low-field mobility enhancements of 80% at room temperature and 12% at 10 K, when compared to control devices fabricated in Czochralski Si. Similar enhancements are observed in the device transconductance. In addition, buried channel devices show peak room temperature mobilities about three times that of control devices  相似文献   
997.
In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p+-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF2-implanted device is much larger than that of the boron-implanted device  相似文献   
998.
C ion implantation has been employed, for the first time, to form the buried p-layer in GaAs, self-aligned, ion implanted JFETs. Comparable DC performance was seen for JFETs with C or Mg implants; however, C-backside JFETs showed superior high-frequency performance. High dose C-backside devices had a ft of 28.3 GHz and a fmax of 43.2 GHz for a 0.5 μm gate length that were 28% and 46% higher, respectively, than comparable Mg-implanted JFETs. This enhancement is a result of the lower Cgs in the C-backside device resulting from he inherently low activation of the implanted C below the channel while the C still effectively compensated the tail of the Si-channel implant. This approach relaxes the trade-off between optimizing the DC and the AC performance for the buried p-implant in GaAs JFETs and MESFET's  相似文献   
999.
Responds to M. F. Hoyt's (see record 1995-22250-001) commentary on T. F. Van Denburg and E. J. Van Denburg's (see record 1994-18427-001) response to Hoyt's (see record 1994-18395-001) commentary on Van Denburg and Van Denburg's (see record 1993-06526-001) article about a case of premature therapy termination. Issues related to limits and flexibility in treatment are addressed. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
1000.
Continuous surface boundaries, object shape, and global motion can be perceived from information that is fragmentary in both space and time. The authors report investigations indicating that accretion and deletion of texture is only 1 member of a broader class of element transformations that produce boundaries, shape, and motion, through spatiotemporal boundary formation (SBF). Four experiments exploring SBF are reported. The 1st 3 examine the class of transformations producing SBF, indicating that local element changes in color, orientation, or location are all effective. A 4th experiment examines temporal constraints on SBF. Integration of local element changes to produce boundaries, form, and global motion appears to be confined to a 165-msec window. Two classes of spatiotemporal integration models are considered; the relation between SBF and other cases of boundary interpolation are discussed. (PsycINFO Database Record (c) 2010 APA, all rights reserved)  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号