Functional Materials for Memristor-Based Reservoir Computing: Dynamics and Applications

The booming development of artificial intelligence (AI) requires faster physical processing units as well as more efficient algorithms. Recently, reservoir computing (RC) has emerged as an alternative brain-inspired framework for fast learning with low training cost, since only the weights associated with the output layers should be trained. Physical RC becomes one of the leading paradigms for computation using high-dimensional, nonlinear, dynamic substrates. Among them, memristor appears to be a simple, adaptable, and efficient framework for constructing physical RC since they exhibit nonlinear features and memory behavior, while memristor-implemented artificial neural networks display increasing popularity towards neuromorphic computing. In this review, the memristor-implemented RC systems from the following aspects: architectures, materials, and applications are summarized. It starts with an introduction to the RC structures that can be simulated with memristor blocks. Specific interest then focuses on the dynamic memory behaviors of memristors based on various material systems, optimizing the understanding of the relationship between the relaxation behaviors and materials, which provides guidance and references for building RC systems coped with on-demand application scenarios. Furthermore, recent advances in the application of memristor-based physical RC systems are surveyed. In the end, the further prospects of memristor-implemented RC system in a material view are envisaged.     

Unveiling the Synergy of Interfacial Contact and Defects in α-Fe2O3 for Enhanced Photo-Electrochemical Water Splitting

Photo-electrochemical (PEC) water splitting is a promising method for converting solar energy into clean energy, but the mechanism of improving PEC efficiency through the interfacial contact and defect strategy remains highly controversial. Herein, reduced graphene oxide (rGO) and oxygen vacancies are introduced into α-Fe₂O₃ nanorod (NR) arrays using a simple spin-coating method and acid treatment. The resultant oxygen vacancy–α-Fe₂O₃/rGO-integrated system exhibits a higher photocurrent, four times than the pristine α-Fe₂O₃. It is well evidenced that the electronic interface interaction between α-Fe₂O₃ and rGO is boosted with the oxygen vacancies, facilitating electron transfer from α-Fe₂O₃ to rGO. Moreover, the oxygen vacancies not only create interband states in α-Fe₂O₃ that can trap photogenerated holes and thus facilitate charge separation but significantly also strengthen the adsorption of oxidative intermediates and reduce the energy barrier of rate-determining step during oxygen evolution reaction (OER). This study demonstrates an rGO–oxygen vacancy synergistic interfacial contact and defect modification approach to design semiconducting photocatalysts for high-efficiency solar energy capture and conversion. The generated principle is expected to be extendable to another material system.     

电磁搅拌作用下激光熔池电磁场、温度场和流场的数值模拟

建立了描述电磁搅拌辅助激光熔凝过程的电磁场和流场的三维数学模型,采用有限元和有限体积结合的方法实现激光熔池中电磁场与温度场及流场的耦合模拟分析,研究了电磁场对激光熔池流场与温度场的影响。结果表明,电磁力在水平面上呈周向分布,切向电磁力的大小从熔池边缘到中心递减;在旋转磁场的作用下,熔池内温度略有降低,温度梯度减小;熔池内液体趋向旋转运动,速度场分布与电磁力相似;熔池纵向环流增加,使熔池内的熔体对流加剧,有利于传热,加快冷却;激励电流大小对电磁场和熔池流场有明显影响。为激光加工提供理论参考。     

有效的模(2n+1)乘算法及其VLSI设计

模乘运算在剩余数值系统、数字信号处理系统及其它领域都具有广泛的应用,模乘法器的硬件实现具有重要的作用。提出了一种改进的模(2~n 1)余数乘法器的算法及其硬件结构,其输入为通常的二进制表示,因此无需另外的输人数据转换电路而可直接用于数字信号处理应用。通过利用模(2~n 1)运算的周期性简化其乘积项并重组求和项,以及采用改进的进位存储加法器和超前进位加法器优化结构以减少路径延时和硬件复杂度。比较其它同类设计,新的结构具有较好的面积、延时性能。     

2D Group IVB Transition Metal Dichalcogenides

Semiconductor technology is currently impaired by the surface dangling bond of materials, which introduces scattering and interface traps. 2D materials, especially transition metal dichalcogenides (TMDs) with different main groups, have settled this issue by utilizing unique atomically smooth surfaces and van der Waals (vdW) structures. Over the past few decades, many processes for exploring new materials, manipulating physical properties, and synthesizing single crystals have been developed. Among these 2D materials, group IVB TMDs are distinguished for their splendid physical properties, including ultrahigh mobility, charge density wave, superconducting transitions, etc. Here, the recent advances in group IVB TMDs are reviewed, which offer easy access to next generation nano-, opto-, thermal-electronic, energy storage and conversion applications. Both the advantages and challenges of these studies are summarized to further clarify existing problems.     

基于AT89C52单片机的烟雾报警器设计

介绍了一种基于AT89C52单片机和MQ-2型半导体电阻式烟雾传感器的烟雾报警器设计。该烟雾报警器具有声光报警、浓度显示以及与上位机串口通信等功能。其结构简单,价格低廉,性能稳定,具有较好的实用价值。     

Charge-Driven Self-Assembled Microspheres Hydrogel Scaffolds for Combined Drug Delivery and Photothermal Therapy of Diabetic Wounds

The treatment of diabetic wound remains a big clinical challenge. Hydrogel that can provide physical barrier and humidity displays amazing potentials for managing the diabetic wounds healing. Herein, a new charge-driven self-assembled microsphere hydrogel scaffold (SMHS) is reported based on an electric charge interaction, by combining use of black phosphorus (BP)-contained chitosan methacryloyl (CS) microspheres with positive charge and basic fibroblast growth factor-contained hyaluronic acid methacryloyl (HA) microspheres with negative charge. The weak charge attraction among microspheres gives the SMHS the injectable characteristic. Due to the existence of BP, near-infrared (NIR) irradiation has obvious effects on the degradation and drug release behaviors of SMHS. Significantly, SMHS that combines the short-term physical (photothermal) intervention and long-term chemical (drug release) intervention may be promising in spatio-temporal regulation of regenerative microenvironment. SMHS with NIR irradiation (SMHS+NIR) can promote cell proliferation, cell migration, angiogenesis and macrophage polarization. Moreover, in diabetic rat skin wounds, SMHS+NIR significantly accelerates the wound healing process by simultaneously inhibiting the inflammatory response, promoting angiogenesis and tissues remodeling. The outcome of this research not only provides a biomaterial for diabetic wounds healing, but also demonstrates a new strategy for designing novel hydrogel-based biomaterials which have the free editing and combination functions.     

一种新型压阻值理论计算方法

A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance on the sensitive film. In the proposed method, we take the Ritz method as an initial theoretical model to calculate the rate of piezoresistance ΔR/R through an integral （the closed area Ω where the surface piezoresistance of the film lies as the integral area and the product of stress σ and piezoresistive coefficient π as the integral object） and compare the theoretical values with the experimental results. Compared with the traditional method, this novel calculation method is more accurate when applied to calculating the value of the silicon piezoresistance on the sensitive film of an SOI pieoresistive pressure sensor.     

探讨中国电信运营商的海外拓展之路

如何实现"走出去"是中国电信运营商普遍关注的问题.本文分析了中国电信运营业国际化的背景,总结了国内外电信运营商全球拓展的经验和教训,并以此为基础就中国电信运营商的海外拓展战略、模式,海外市场选择以及资本运作等关键问题进行了探讨,以寻求适合中国电信运营商海外拓展的健康之路.     

On the Deembedding Issue of CMOS Multigigahertz Measurements

The purpose of this paper is to address the issues of deembedding multigigahertz CMOS measurements by extensively comparing six popular methods and by proposing a new method based on two-port measurements. The comparison aims to evaluate the maximum applicable frequency of equivalent-circuit methods (open-short, three step, ...) and the effect of the source dangling leg of MOSFETs on the cascade methods (two line and thru). Fifty dummy structures and 12 MOSFETs were fabricated using standard 0.18-mum CMOS technology. It was found that, at low frequencies (<6 GHz), all method results were comparable. The open-short method performed well over the entire frequency range (0.1-40 GHz) studied. The newly developed method, called the thru-short method, uses only two dummy structures, a thru and a short, to completely deembed the parasitics from probe pads, interconnects, and the semiconducting substrate. The measurements validated the thru-short algorithm and showed its usefulness for multigigahertz on-wafer CMOS measurements.