High‐Performance Ultraviolet Photodetector Based on a Few‐Layered 2D NiPS3 Nanosheet

2D materials, represented by transition metal dichalcogenides (TMDs), have attracted tremendous research interests in photoelectronic and electronic devices. However, for their relatively small bandgap (<2 eV), the application of traditional TMDs into solar‐blind ultraviolet (UV) photodetection is restricted. Here, for the first time, NiPS₃ nanosheets are grown via chemical vapor deposition method. The nanosheets thinning to 3.2 nm with the lateral size of dozens of micrometers are acquired. Based on the various nanosheets, a linearity is found between the Raman intensity of specific A_g modes and the thickness, providing a convenient method to determine their layer numbers. Furthermore, a UV photodetector is fabricated using few‐layered 2D NiPS₃ nanosheets. It shows an ultrafast rise time shorter than 5 ms with an ultralow dark current less than 10 fA. Notably, this UV photodetector demonstrates a high detectivity of 1.22 × 10¹² Jones, outperforming some traditional wide‐bandgap UV detectors. The wavelength‐dependent photoresponsivity measurement allows the direct observation of an admirable cut‐off wavelength at 360 nm, which indicates a superior spectral selectivity. The promising photodetector performance, accompanied with the controllable fabrication and transfer process of nanosheet, lays the foundation of applying 2D semiconductors for ultrafast UV light detection.     

Using Bulk Heterojunctions and Selective Electron Trapping to Enhance the Responsivity of Perovskite–Graphene Photodetectors

Graphene field effect transistor sensitized by a layer of semiconductor (sensitizer/GFET) is a device structure that is investigated extensively for ultrasensitive photodetection. Among others, organometallic perovskite semiconductor sensitizer has the advantages of long carrier lifetime and solution processable. A further step to improve the responsivity is to design a structure that can promote electron–hole separation and selective carrier trapping in the sensitizer. Here, the use of a hybrid perovskite–organic bulk heterojunction (BHJ) as the light sensitizer to achieve this goal is demonstrated. Our spectroscopy and device measurements show that the CH₃NH₃PbI₃–PCBM BHJ/GFET device has improved charge separation yield and carrier lifetime as compared to a reference device with a CH₃NH₃PbI₃ sensitizer only. The key to these enhancement is the presence of [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM), which acts as charge separation and electron trapping sites, resulting in a 30‐fold increase in the photoresponsivity. This work shows that the use of a small amount of electron or hole acceptors in the sensitizer layer can be an effective strategy for improving and tuning the photoresponsivity of sensitizer/GFET photodetectors.     

Facile Two‐Step Synthesis of All‐Inorganic Perovskite CsPbX3 (X = Cl,Br, and I) Zeolite‐Y Composite Phosphors for Potential Backlight Display Application

Recently developed CsPbX₃ (X = Cl, Br, and I) perovskite quantum dots (QDs) hold great potential for various applications owing to their superior optical properties, such as tunable emissions, high quantum efficiency, and narrow linewidths. However, poor stability under ambient conditions and spontaneous ion exchange among QDs hinder their application, for example, as phosphors in white‐light‐emitting diodes (WLEDs). Here, a facile two‐step synthesis procedure is reported for luminescent and color‐tunable CsPbX₃–zeolite‐Y composite phosphors, where perovskite QDs are encapsulated in the porous zeolite matrix. First zeolite‐Y is infused with Cs⁺ ions by ion exchange from an aqueous solution and then forms CsPbX₃ QDs by diffusion and reaction with an organic solution of PbX₂. The zeolite encapsulation reduces degradation and improves the stability of the QDs under strong illumination. A WLED is fabricated using the resulting microscale composites, with Commission Internationale de I'Eclairage (CIE) color coordinates (0.38, 0.37) and achieving 114% of National Television Standards Committee (NTSC) and 85% of the ITU‐R Recommendation BT.2020 (Rec.2020) coverage.     

图像处理中扩散方程的快速数值解法

该文给出图像处理中常用的二阶非线性扩散方程的快速求解算法。首先提出一种线性差分离散格式,既包含了显格式,也包含了隐格式;其次给出了数值稳定性条件,最后讨论了3种快速解法：多重网格法(MG),交替方向隐格式(ADI),和加性算子分离格式(AOS)。对3种方法进行了比较和评价,结果表明：用3种方法得到的去噪效果基本相同;ADI和AOS实现较简单;多重网格法得到的恢复图像在光滑区域视觉上优于两种直接法。     

乘性噪声环境下基于局部最佳检测器的伪码捕获方法

扩频系统常常工作在多径环境中,伴随着加性噪声的同时往往还存在着乘性噪声。该文提出了一种乘性噪声环境下伪码捕获方法,将伪码捕获等价为假设检验问题,利用局部最佳检测算法推导出乘性噪声环境下的伪码捕获检测统计量,文中给出了基于局部最佳检测算法的捕获结构,并与传统的平方和检测器进行了性能仿真对比,结果表明该文所提出的捕获方法在乘性噪声环境下检测性能较平方和检测器有较大幅度的提高,而在无乘性噪声的环境下检测性能只较传统的平方和检测器检测性能稍有降低。     

高性能数字频率合成器的设计与实现

通过对直接数字频率合成技术的研究,采用单片机AT89S51控制DDS芯片AD9854设计出一种高性能直接数字频率合成器。该数字频率合成器采用并行通信的方式传输控制字,通过改变控制字来改变输出频率,得到所需频率的正弦波。软件上采用菜单式、全部键盘控制方式。用4×4矩阵键盘控制,进行功能选择以及设置频率、幅度和相位控制字。界面显示用带中文字库的液晶TS-12864显示,实现了良好的人机交互,系统操作使用方便。用单片机控制DDS数字芯片实现的数字频率合成器,有着比模拟频率合成器更好的抗干扰性、频率分辨率和频谱纯度,同时有着更小的体积。系统经测试得到所需频率的正弦波,数字频率合成器设计成功。     

基于非下采样Contourlet域高斯尺度混合模型的图像降噪

提出了一种图像去噪方法,将高斯尺度混合(GSM)模型引入非下采样Contourlet变换(NSCT)域,构造了基于NSCT分解系数的邻域模型,并利用Bayes最小均方(BLS)估计进行局部去噪。仿真实验结果表明,通过本文提出的方法能够有效去除高斯噪声,较完整地保持图像中的边缘等细节信息,在峰值信噪比(PSNR)提高与视觉效果上优于其它的去噪方法。实验结果验证了方法的正确性。     

24位A／D转换称重数据采集系统

研究一种用于组合秤和选别秤的高精度数据采集系统,采用具有24位分辨率的Σ-Δ模数转换器高性能片上系统(SoC)MSC1210和应变式称重传感器设计称重数据采集系统。该系统可应用于组合称重设备、选别设备,并具有精度较高,可靠性较强的特点。     

设计模式在业务逻辑层中的应用

传统的软件应用系统一般采用3层应用框架,业务逻辑层代码中混杂各种数据库调用语句,严重影响系统的可扩展性、可复用性、可维护性。从设计模式考虑,提出从业务逻辑层分出数据接口层,负责与数据层沟通,实现业务逻辑层与数据层的真正独立,提高系统的可扩展性、可复用性和可维护性,并通过具体应用实例实现数据访问对象(DAO)设计模式。     

用空间电荷限制电流法测定n型掺杂的BPhen的电子迁移率

摘 要 用空间电荷限制电流（SCLC）法测定了不同厚度（50-300nm）的Liq掺杂BPhen的电子迁移率。实验结果表明在33wt％Liq掺杂的BPhen中,当厚度达到150nm以后电子迁移率接近于体材料的迁移率。对于300nm厚的掺杂的BPhen,测定的电子迁移率约为5.4×10-3 cm2/Vs （电场强度为0.3MV/cm时）,比本征BPhen的迁移率（3.4×10-4 cm2/Vs）高约一个数量级,而且其迁移率基本上不依赖于电场。同时还对掺杂的BPhen为有机电致发光器件（OLED）的典型厚度时的电子迁移率进行了测定。