住宅隔热的影响因素及设计对策

夏季 ,室外气候诸因素经过不同途径 ,对室内的影响会有差异。了解这些差异有助于在设计时把握主要问题。讨论在住宅隔热设计中 ,针对不同的室内条件 ,应优先考虑的因素及相应的设计对策。     

A Petri net based approach to modeling and scheduling for an FMSand a case study

In this paper, a timed-place Petri net (TPPN) model for flexible manufacturing systems (FMSs) is constructed, which contains two major submodels: the stationary transportation model; and the variable process flow model. For multiple automated guided vehicle (AGV) systems, the authors embed a simple rule and introduce a push-AGV strategy in a TPPN model to solve the collision and traffic jam problems of such vehicles. Since a firing sequence of the TPPN from the initial marking to the final marking can be seen as a schedule of the modeled FMS, by using an A^* based search algorithm, namely, the limited-expansion A algorithm, an effective schedule of the part processing can be obtained. To show the promising potential of the proposed work, a prototype FMS is used as a target system for implementation. The experiment results assert that the job-shop scheduling problem can always be satisfactorily solved     

Enhancement of oxide break-up by implantation of fluorine inpoly-Si emitter contacted p+-n shallow junctionformation

In this study, it is demonstrated that the incorporation of fluorine can enhance poly-Si/Si interfacial oxide break-up in the poly-Si emitter contacted p⁺-n shallow junction formation. The annealing temperature for breaking up the poly-Si/Si interfacial oxide has been found to be as low as 900°C. As a result, the junction depth of the BF₂-implanted device is much larger than that of the boron-implanted device     

连续挤压法介绍

连续挤压法的特点是：挤压所需的压力是借助一个回转的摩擦轮来实现的。摩擦轮的轮缘上设有一个凹槽，其断面取决于原坯的断面（线材坯料）。本文将就这种工艺的设备和有关铝材生产阶段中的一些问题作一简介。     

局部施肥对植株生长及根系形态的影响

本文论述了局部施肥对植株地上部与地下部的影响。局部施肥促进了施肥区根系的发达 ,第一侧根与第二侧根较多 ,根的吸收表面积增多 ,根鲜重增加 ,对养分的吸收能力增强 ,但整个根系与地上部的干鲜重下降。     

0.64BaTi4O9-0.36BaEu2Ti4O12/BaTi4O9纤维复合陶瓷的相结构研究

利用XRD，XPS和TEM等测试手段对0.64BaTi4O9-0.36BaEu2Ti4O12/BaTi4O9纤维复合陶瓷新材料的相结构进行了研究。研究结果表明：随着BaTi4O6纤维的加入，烧结试样表面O元素的含量提高，材料中Ti^3 离子和Ti^2 离子的含量降低，材料介电性能有所提高。     

缓冲层对氮化镓二维生长的影响

报道了在射频等离子体（RF-Plasma)辅助的分子束外延（MBE）技术中，使用白宝石（0001）衬底，采用低温缓冲层工艺外延氮化镓（GaN)。通过原子力显微镜（AFM）的表面形貌比较及X射线双晶衍射（XRD）ω扫描摇摆曲线的分析，讨论了低温缓冲层成核机理及缓冲层生长温度与形成准二维生长的关系，确立了缓冲层的三维成核，准二维生长的生长机理，并在此基础上实现了氮化镓外延层更好地二维生长，进一步提高了氮化镓外延层的晶体质量。     

Pd-Ge contact to n-GaAs with the TiW diffusion barrier

Pd-Ge based ohmic contact to n-GaAs with a TiW diffusion barrier was investigated. Electrical analysis as well as Auger electron spectroscopy and the scanning electron microscopy were used to study the contact after it was subjected to different furnace and rapid thermal annealing and different aging steps. All analyses show that TiW can act as a good barrier metal for the Au/Ge/Pd/n-GaAs contact system. A value of 1.45 × 10⁻⁶ Ω-cm² for the specific contact resistance was obtained for the Au/TiW/Ge/Pd/n-GaAs contact after it was rapid thermally annealed at 425°C for 90 s. It can withstand a thermal aging at 350°C for 40 h with its ρ_c increasing to 2.94 × 10⁻⁶Ω-cm² and for an aging at 410°C for 40 h with its ρ_c increasing to 1.38 × 10⁻⁵ Ω-cm².     

也谈轻型钢结构房屋柱基设计

对柱脚抗剪键的设置和计算中所取用的荷载组合提出个人观点,同时对轻钢结构柱脚螺栓受拉计算提出注意事项.