首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   1882篇
  免费   40篇
  国内免费   6篇
电工技术   140篇
综合类   2篇
化学工业   278篇
金属工艺   41篇
机械仪表   34篇
建筑科学   35篇
矿业工程   1篇
能源动力   34篇
轻工业   155篇
水利工程   9篇
无线电   239篇
一般工业技术   240篇
冶金工业   546篇
原子能技术   37篇
自动化技术   137篇
  2022年   22篇
  2021年   38篇
  2020年   17篇
  2019年   12篇
  2018年   30篇
  2017年   16篇
  2016年   20篇
  2015年   19篇
  2014年   38篇
  2013年   56篇
  2012年   38篇
  2011年   69篇
  2010年   49篇
  2009年   63篇
  2008年   65篇
  2007年   53篇
  2006年   49篇
  2005年   60篇
  2004年   46篇
  2003年   34篇
  2002年   53篇
  2001年   29篇
  2000年   44篇
  1999年   50篇
  1998年   203篇
  1997年   125篇
  1996年   93篇
  1995年   67篇
  1994年   58篇
  1993年   65篇
  1992年   36篇
  1991年   26篇
  1990年   18篇
  1989年   24篇
  1988年   28篇
  1987年   12篇
  1986年   11篇
  1985年   21篇
  1984年   20篇
  1983年   15篇
  1982年   18篇
  1981年   16篇
  1980年   12篇
  1979年   14篇
  1978年   7篇
  1977年   18篇
  1976年   16篇
  1975年   7篇
  1974年   6篇
  1967年   6篇
排序方式: 共有1928条查询结果,搜索用时 14 毫秒
31.
The microstructure of InxGa1−xAs/GaAs (5 nm/5 nm, x < 0 to 1.0), as grown by a metalorganic chemical vapor deposition two-step growth technique on Si(100) at 450‡C, and subsequently annealed at 750‡C, is investigated using plan-view and cross-sectional transmission electron microscopy. The variations in resultant island morphology and strain as a function of the In content were examined through the comparison of the misfit dislocation arrays and moirés observed. The results are discussed in relation to the ways in which the island relaxation process changes for high In content.  相似文献   
32.
A single-chip H.264 and MPEG-4 audio-visual LSI for mobile applications including terrestrial digital broadcasting system (ISDB-T / DVB-H) with a module-wise, dynamic voltage/frequency scaling architecture is presented for the first time. This LSI can keep operating even during the voltage/frequency transition, so there is no performance overhead. It is realized through a dynamic deskewing system and an on-chip voltage regulator with slew rate control. By the combination with traditional low power techniques such as embedded DRAM and clock gating, it consumes only 63 mW in decoding QVGA H.264 video at 15 frames/sec and MPEG-4 AAC LC audio simultaneously.  相似文献   
33.
Lai  I.-Wei  Funabiki  Nobuo  Tajima  Shigeto  Al Mamun  Md. Selim  Fujita  Sho 《Wireless Networks》2018,24(6):2191-2203
Wireless Networks - A Wireless Internet-access Mesh NETwork (WIMNET) provides scalable and reliable internet access through the deployment of multiple access points (APs) and gateways (GWs). In...  相似文献   
34.
MBE growth and properties of ZnO on sapphire and SiC substrates   总被引:9,自引:0,他引:9  
Molecular beam epitaxy (MBE) of ZnO on both sapphire and SiC substrates has been demonstrated. ZnO was used as a buffer layer for the epitaxial growth of GaN. ZnO is a würtzite crystal with a close lattice match (<2% mismatch) to GaN, an energy gap of 3.3 eV at room temperature, a low predicted conduction band offset to both GaN and SiC, and high electron conductivity. ZnO is relatively soft compared to the nitride semiconductors and is expected to act as a compliant buffer layer. Inductively coupled radio frequency plasma sources were used to generate active beams of nitrogen and oxygen for MBE growth. Characterization of the oxygen plasma by optical emission spectroscopy clearly indicated significant dissociation of O2 into atomic oxygen. Reflected high energy electron diffraction (RHEED) of the ZnO growth surface showed a two-dimensional growth. ZnO layers had n-type carrier concentration of 9 × 1018 cm−3 with an electron mobility of 260 cm2/V-s. Initial I-V measurements displayed ohmic behavior across the SiC/ZnO and the ZnO/GaN heterointerfaces. RHEED of GaN growth by MBE on the ZnO buffer layers also exhibited a two-dimensional growth. We have demonstrated the viability of using ZnO as a buffer layer for the MBE growth of GaN.  相似文献   
35.
Monolithic rat-race mixers for millimeter waves   总被引:1,自引:0,他引:1  
In this paper, we report on fully monolithic millimeter-wave Schottky-barrier diode (SBD) down-converters with an IF amplifier using heterojunction bipolar transistors (HBT's). A rat-race circuit is used for the mixer, and is analyzed using a harmonic-balance simulator. The measured conversion gain and the isolation are 7.1 and 29 dB in the V-band design, and 8.0 and 25 dB in the W-band design, respectively. The conversion gains are matched well with the circuit simulation  相似文献   
36.
The authors describe a number of design techniques that are effective for enhancing sensitivity and bandwidth. A Gilbert-cell circuit with a single-to-balance conversion input buffer and a peaking circuit are adopted for the mixer. In addition, a wideband amplifier is proposed that adopts a novel multiple-feedback cascode FET amplifier configuration with an LC input matching network. Finally, a novel interconnection technique is proposed that improves impedance matching between ICs and the package over a wide frequency range up to 10 GHz. These ICs were fabricated using a 0.2-μm gate self-aligned GaAs MESFET process. These techniques could enable a highly sensitive multigigabit-per-second coherent optical heterodyne receiver to be implemented  相似文献   
37.
A new architecture for serial access memory is described that enables a static random access memory (SRAM) to operate in a serial access mode. The design target is to access all memory address serially from any starting address with an access time of less than 10 ns. This can be done by all initializing procedure and three new circuit techniques. The initializing procedure is introduced to start the serial operation at an arbitrary memory address. Three circuit techniques eliminate extra delay time caused by an internal addressing of column lines, sense amplifiers, word lines, and memory cell blocks. This architecture was successfully implemented in a 4-Mb CMOS SRAM using a 0.6 μm CMOS process technology. The measured serial access time was 8 ns at a single power supply voltage of 3.3 V  相似文献   
38.
The relationship between thiophene sequences and organic thin-film transistor (OTFT) characteristics was studied to determine their effect on ionization potential, molecular orientation, and air stability. Two types of molecular structures were used: continuous sequence and divided sequence thiophenes. The length of thiophene sequence did not affect FET characteristics but did affect ionic potential and air stability. Furthermore, materials with divided thiophene sequences showed no change in OTFT characteristics when exposed to air. These results suggest that separation of thiophene sequences can improve air stability, which is a problem of thiophene-based materials.  相似文献   
39.
This paper introduces a new family of low-power and high-performance flip-flops, namely conditional data mapping flip-flops (CDMFFs), which reduce their dynamic power by mapping their inputs to a configuration that eliminates redundant internal transitions. We present two CDMFFs, having differential and single-ended structures, respectively, and compare them to the state-of-the-art flip-flops. The results indicate that both CDMFFs have the best power-delay product in their groups, respectively. In the aspect of power dissipation, the single-ended and differential CDMFFs consume the least power at data activity less than 50%, and are 31% and 26% less power than the conditional capture flip-flops at 25% data activity, respectively. In the aspect of performance, CDMFFs achieve small data-to-output delays, comparable to those of the transmission-gate pulsed latch and the modified-sense-amplifier flip-flop. In the aspect of timing reliability, CDMFFs have the best internal race immunity among pulse-triggered flip-flops. A post-layout case study is demonstrated with comparison to a transmission-gate flip-flop. The results indicate the single-ended CDMFF has 34% less in data-to-output delay and 28% less in power at 25% data activity, in spite of the 34% increase in size  相似文献   
40.
The purpose of this study is to develop a technique for computer-aided diagnosis (CAD) systems to detect lung nodules in helical X-ray pulmonary computed tomography CT) images. We propose a novel template-matching technique based on a genetic algorithm (GA) template matching (GATM) for detecting nodules existing within the lung area; the GA was used to determine the target position in the observed image efficiently and to select an adequate template image from several reference patterns for quick template matching. In addition, a conventional template matching was employed to detect nodules existing on the lung wall area, lung wall template matching (LWTM), where semicircular models were used as reference patterns; the semicircular models were rotated according to the angle of the target point on the contour of the lung wall. After initial detecting candidates using the two template-matching methods, we extracted a total of 13 feature values and used them to eliminate false-positive findings. Twenty clinical cases involving a total of 557 sectional images were used in this study. 71 nodules out of 98 were correctly detected by our scheme (i.e., a detection rate of about 72%), with the number of false positives at approximately 1.1/sectional image. Our present results show that our scheme can be regarded as a technique for CAD systems to detect nodules in helical CT pulmonary images.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号