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911.
Yeqin Huang Narayanan R.M. Kadambi G.R. 《Antennas and Propagation, IEEE Transactions on》2003,51(11):3064-3071
Electromagnetic coupling effects on the antenna in a conducting cavity are studied theoretically and experimentally. It is observed in experiments that at the resonant frequencies of the cavity, the input resistance of the antenna attains values two or three orders of magnitude higher than that at frequencies away from resonance. It is shown via theoretical analysis that the input resistance of the antenna measured at the resonant frequencies of the cavity is not merely the loss resistance desired in computing the antenna efficiency, but is actually the sum of the loss resistance of the antenna and the coupling resistance between the antenna and cavity. This coupling effect is demonstrated quantitatively by numerical computations for dipole and monopole antennas. The computational results for the input resistance are in agreement with the measured data. A method is proposed to avoid the cavity-antenna antiresonance in the measurement. 相似文献
912.
Aloisi W. Giustolisi G. Palumbo G. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2004,51(2):77-84
This paper investigates the design of low-voltage low-power switched-capacitor (SC) filters for high-frequency applications by using the clock-booster approach. In particular, our proposed SC filter architecture uses single-ended double-sampling integrator cells based on low-voltage operational transconductance amplifiers which take advantage of dynamic biasing and the clock-booster technique to drive the switch transistors. To validate its high-frequency capability, two low-pass elliptic SC filters respectively with a corner frequency of 6 and 8-MHz, were designed in a 0.35-/spl mu/m CMOS process. Both are suitable for telecom applications and can operate with a power supply as low as 1.5 V, while dissipating 11 mW. Measurements showed that for an output amplitude of 1 V/sub pp/, their total harmonic distortions were maintained well below -40 dB in their bandwidths. Comparisons with other SC filter implementations in the literature, which highlight the quality of our implementation are also provided. 相似文献
913.
This paper provides an integrative literature review of the research on the impact of the public funding of basic research, extending previous work done at the Science Policy Research Unit (SPRU), University of Sussex, East Sussex, UK. "Impact" is measured in terms of publications, patents, new drugs, employment, and new start-up companies. The primary focus of this paper is on empirical studies of the impact of biomedical research. However, a few key theoretical papers and empirical papers with a broader industrial focus are also reviewed to provide a more complete perspective. Conclusions, including an alternative view that basic research need not be public supported, and future research opportunities in this area are also discussed. 相似文献
914.
Flowers G.T. Fei Xie Bozack M.J. Malucci R.D. 《Components and Packaging Technologies, IEEE Transactions on》2004,27(1):65-71
Single frequency vibration tests were used to induce fretting corrosion in tin alloy plated contacts. The samples used in this study were connectors consisting of 25 pairs of mated pin and socket contacts. Experimental results for a variety of vibration levels, frequencies, and wiring tie-off lengths are presented. The experiments consisted of running a series of vibration tests at each frequency where the excitation level was stepped through a range of g-levels. During each test run contact resistance was monitored as a performance characteristic. The results exhibit threshold behavior at each frequency for the onset of fretting degradation. Typically a plateau region was observed where similar g-levels produced similar fretting rates. It was also found that outside the plateau region the g-levels varied according to the dynamic behavior of the mechanical system. In addition, a transfer matrix model was used to analyze these results. An empirical fit of the data correlated well with the model when damping was used. This analysis revealed the importance of the bending moment induced at the contact interface as a result of excitation levels and tie-off configurations. Consequently, it is concluded that dynamic response of the mechanical system under various g-levels and tie off configurations can greatly impact the performance of a connector system subjected to vibration stresses. 相似文献
915.
Examining a curvilinear relationship between communication frequency and team performance in cross-functional project teams 总被引:3,自引:0,他引:3
Patrashkova-Volzdoska R.R. McComb S.A. Green S.G. Compton W.D. 《Engineering Management, IEEE Transactions on》2003,50(3):262-269
The performance of a cross-functional team depends on the skillful and innovative combination of information and expertise from all team members. Communication is the medium through which team members share the information required for successful amalgamation. In this work, we postulate that both high and low levels of team communication can impede team performance, thus leading to a curvilinear relationship between team performance and team communication. To test this hypothesis, the relationships between face-to-face, e-mail, and telephone communication and team performance were examined for 60 cross-functional project teams. E-mail and face-to-face communication were curvilinearly associated with performance, but telephone communication was not. Further analysis of the communication frequency between colocations showed that e-mail is the only medium for which usage increased with distance. 相似文献
916.
Bissessur H. Charlet G. Gohin E. Simonneau C. Pierre L. Idler W. 《Electronics letters》2003,39(2):192-193
By transmitting 40 channels over 300 km of TeraLight fibre, it is shown that optical differential phase shift keying can be used in 100 GHz-spaced 40 Gbit/s systems, with direct detection and a simple receiving filter. Chromatic dispersion tolerance around 300 ps/nm is also measured, compared to 70 ps/nm for NRZ. 相似文献
917.
This article raises various issues in the design of an efficient BCI system in multimedia applications. The main focus is on one specific modality, namely an electroencephalography (EEG)-based BCI. In doing so, we provide an overview of the most recent progress achieved in this field, with an emphasis on signal processing aspects. 相似文献
918.
Lianshan Yan Yeh C. Yang G. Lin L. Chen Z. Shi Y.Q. Willner A.E. Yao X.S. 《Lightwave Technology, Journal of》2003,21(7):1676-1684
We demonstrate the first programmable group-delay module based on polarization switching. With a unique binary tuning mechanism, the device can generate any differential group delay value from -45 to +45 ps with a resolution of 1.40 ps, or any true-time-delay value from 0 to 45 ps with a resolution of 0.7 ps. The delay varying speeds for both applications are under 1 ms and can be as fast as 0.1 ms. We evaluate both the dynamic and static performances of the device while paying special attention to its dynamic figures of merit for polarization-mode dispersion emulation and compensation applications. Our experiment shows that the device exhibits a negligible transient-effect induced power penalty (<0.2 dB) in a 10-Gb/s nonreturn-to-zero system. 相似文献
919.
Kerber A. Cartier E. Pantisano L. Degraeve R. Kauerauf T. Kim Y. Hou A. Groeseneken G. Maes H.E. Schwalke U. 《Electron Device Letters, IEEE》2003,24(2):87-89
The magnitude of the V/sub T/ instability in conventional MOSFETs and MOS capacitors with SiO/sub 2//HfO/sub 2/ dual-layer gate dielectrics is shown to depend strongly on the details of the measurement sequence used. By applying time-resolved measurements (capacitance-time traces and charge-pumping measurements), it is demonstrated that this behavior is caused by the fast charging and discharging of preexisting defects near the SiO/sub 2//HfO/sub 2/ interface and in the bulk of the HfO/sub 2/ layer. Based on these results, a simple defect model is proposed that can explain the complex behavior of the V/sub T/ instability in terms of structural defects as follows. 1) A defect band in the HfO/sub 2/ layer is located in energy above the Si conduction band edge. 2) The defect band shifts rapidly in energy with respect to the Fermi level in the Si substrate as the gate bias is varied. 3) The rapid energy shifts allows for efficient charging and discharging of the defects near the SiO/sub 2//HfO/sub 2/ interface by tunneling. 相似文献
920.
M. Blaho D. Pogany E. Gornik M. Denison G. Groos M. Stecher 《Microelectronics Reliability》2003,43(4):545-548
Current distribution in vertical double-diffused MOS (DMOS) transistors of a Smart Power Technology are investigated under high current, short duration operation conditions by means of a backside laser interferometric thermal mapping technique. DMOS devices of different areas are studied under pulsed gate forward operation mode and under electrostatic discharge (ESD)-like stress with floating and grounded gate. The internal behavior of the devices observed by thermal mapping under these stress conditions is correlated with the electrical characteristics. 相似文献