The Vortex Path Model Analysis of the Field Angle Dependence of the Critical Current Density in Nanocomposite YBa2Cu3 O 7−x – BaZrO3 Films Obtained by Low Fluorine Chemical Solution Deposition

In the present paper, we analyze the role of in situ grown BaZrO₃ (BZO) inclusions in YBa₂Cu₃O_7?x (YBCO) thin films prepared by chemical solution deposition using a low fluorine coating solution, on the field angle dependence of the critical current density, J _c (??), data using the vortex path model. In order to form a coherent picture on the BZO doping influence on the pinning properties of the YBCO matrix, detailed structural analyses performed by X-ray diffraction techniques and microstructural evaluation by transmission electron microscopy are also presented. The evaluation of different contributions to the overall, J _c , permitted us to prove the effectiveness of the BZO inclusions acting as isotropic pinning centers, reflected in a uniform component of high relative value with respect to other components. For the studied 10 mol % BZO doping concentration, a threefold increase in the critical current density, J _c , of the YBCO host is measured, in self-field at 77 K, corresponding to a value of J _c =2.9MA/cm², whereas a factor 10 is measured at 1 T (J _c =0.35 MA/cm²).     

Switched-Capacitor Track-and-Hold Amplifiers With Low Sensitivity to Op-Amp Imperfections

This paper describes high-precision switched-capacitor (SC) track-and-hold amplifier (THA) stages. They use a novel continuous-time correlated double sampling (CDS) scheme to desensitize the operation to amplifier imperfections. Unlike earlier predictive-CDS amplifiers, the circuits do not need a sampled-and-held input signal for their operation. During the tracking period, an auxiliary continuous-time signal path is established, which predicts the output voltage during the holding period. This allows accurate operation even for low amplifier gains and large offsets over a wide input frequency range. Extensive simulations were performed to compare the performance of the proposed THAs with earlier circuits utilizing CDS. The results verify that their operation is far more robust than that of any previously described SC amplifiers     

In situ electrochemical impedance spectroscopy of Zr–1%Nb under VVER primary circuit conditions

Oxide layers were grown on tubular samples of Zr–1%Nb under conditions simulating those in VVER-type pressurised water reactors, viz. in near-neutral borate solutions in an autoclave at 290 °C. These samples were investigated using electrochemical impedance spectroscopy which was found to be suitable to follow in situ the corrosion process. A –CPE_oxR_ox– element was used to characterise the oxide layer on Zr–1%Nb. Both the CPE_ox coefficient, σ_ox, and the parallel resistance, R_ox, were found to be thickness dependent. The layer thickness, however, can only be calculated after a calibration procedure. The temperature dependence of the CPE_ox element was also found to be anomalous while the temperature dependence of R_ox indicates that the oxide layer has semiconductor properties. The relaxation time – defined as (R_oxσ_ox)^1/ – was found to be quasi-independent of oxidation time and temperature; thus it is characteristic to the oxide layer on Zr–1%Nb.     

Cognitive processing, discovery of meaning, CD4 decline, and AIDS-related mortality among bereaved HIV-seropositive men

This study investigated whether finding meaning in response to an HIV-related stressor was associated with changes in immune status and health. Forty HIV-seropositive men who had recently experienced an AIDS-related bereavement completed interviews assessing cognitive processing and finding meaning after the loss and provided blood samples for a 2- to 3-year follow-up. AIDS-related mortality over an extended follow-up was determined from death certificates. As predicted, men who engaged in cognitive processing were more likely to find meaning from the loss. Furthermore, men who found meaning showed less rapid declines in CD4 T cell levels and lower rates of AIDS-related mortality (all ps < .05), independent of health status at baseline, health behaviors, and other potential confounds. These results suggest that positive responses to stressful events, specifically the discovery of meaning, may be linked to positive immunologic and health outcomes.     

CMOS active pixel image sensors for highly integrated imagingsystems

A family of CMOS-based active pixel image sensors (APSs) that are inherently compatible with the integration of on-chip signal processing circuitry is reported. The image sensors were fabricated using commercially available 2-μm CMOS processes and both p-well and n-well implementations were explored. The arrays feature random access, 5-V operation and transistor-transistor logic (TTL) compatible control signals. Methods of on-chip suppression of fixed pattern noise to less than 0.1% saturation are demonstrated. The baseline design achieved a pixel size of 40 μm×40 μm with 26% fill-factor. Array sizes of 28×28 elements and 128×128 elements have been fabricated and characterized. Typical output conversion gain is 3.7 μV/e^- for the p-well devices and 6.5 μV/e^- for the n-well devices. Input referred read noise of 28 e^- rms corresponding to a dynamic range of 76 dB was achieved. Characterization of various photogate pixel designs and a photodiode design is reported. Photoresponse variations for different pixel designs are discussed     

Neural network methods for the modeling and control of welding processes

While welding processes are of great importance in manufacturing, their modeling and control is still subject of research. The highly nonlinear, strongly coupled, and multivariable nature of these processes renders the use of analytical tools practically impossible. In this article a novel approach is presented which employs networks of simple nonlinear units: a neural network. A widely used welding process, the Gas Tungsten Arc Welding is presented and the problem of its modeling and control is exhibited. A very brief introduction to neural networks is followed by presenting the experimental results for modeling the static and dynamic behavior of the process, as well as some practical recommendations regarding the use of the neural network techniques for controlling these processes.     

Hot-wire chemical vapor deposition of high hydrogen content silicon nitride for solar cell passivation and anti-reflection coating applications

The stoichiometry and hydrogen content of hot-wire (HW)-grown silicon nitride was examined as a function of SiH₄/NH₃ flow ratio. The effect of post-deposition hydrogenation treatment on overall film hydrogen content was determined. The hydrogen release properties in Si-rich and N-rich nitride layers were characterized by annealing treatments. Defect hydrogenation was studied using Fourier transform infrared spectroscopy on platinum-diffused silicon substrates. HW nitride layers were deposited onto diffused emitter String Ribbon silicon substrates, producing cells with comparable short circuit current density, open circuit voltage, fill-factor, and efficiency to those fabricated using plasma chemical vapor deposition nitride layers.     

A Simple Circuit to Reduce the Input Capacitance of Microelectrode Amplifiers

There are several specialized applications which require amplifiers with very low input capacitance. Two field effect transistors (FET's) can be cascaded in a source follower configuration to drive the drain of the input FET. The cascaded source follower provides at least an order of magnitude decrease in input capacitance. The cascaded source follower can be added to existing amplifiers or incorporated into new amplifier design with relatively little difficulty.