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941.
A low phase noise silicon 18-GHz push-push VCO   总被引:1,自引:0,他引:1  
The design and measurement of a push-push voltage controlled oscillator (VCO) at 18.66-18.3 GHz are presented in this paper. The circuit includes two packaged silicon transistors (Siemens BFP 540F) and a microstrip resonator tuned by two GaAs varactor diodes (M/A-COM ML46580). A 360-MHz tuning range is obtained with an output power of 0-3.1 dBm. The fundamental rejection is around 17 dB for a wide range of collector bias current. The phase noise is below -103 dBc/Hz at 100-kHz offset and below -122 dBc/Hz at 1 MHz for the entire tuning bandwidth.  相似文献   
942.
A sampled grating distributed Bragg reflector-laser integrated with a waveguide Franz-Keldysh modulator is investigated for high optical power applications. The EAM modulation efficiency is demonstrated to asymptotically approach a limit determined by the internal differential photodetector efficiency. Linear photocurrent and 1 dB small signal AC compression point both exceed 70 mA, indicating high saturation power.  相似文献   
943.
Piston failures are not a common occurrence, but they do occur, and failure is usually associated with fatigue crack growth. Most failures initiate at the gudgeon pin hole or in the skirt of the piston. Occasionally they fail elsewhere. In the example covered in this paper, failure initiated in the crown and progressed down to the gudgeon pin before final failure occurred. This paper outlines the cause and mode of failure and shows that small metallurgical discontinuities can contribute to these failures under the right circumstances.  相似文献   
944.
A new approach to study the fracture of quasi-brittle materials is introduced: the design and testing of model materials. By model material is understood a material with enlarged microstructure and which material parameters, such as stacking and mechanical properties of particles and cohesion force, can be fully controlled. In this paper a first example to the model materials approach is presented, consisting in 5 mm steel particles bonded in a precise stacking with an epoxy-based glue. It is shown how it is possible to correlate the different fracture mechanisms and ultimate peak load of the model material to the particle pair force and to the fracture process zone size. It is also seen how a quasi-brittle behaviour is produced in the presence of mechanisms that induced the crack to shift fracture planes, that is, in presence of energy dissipative mechanisms.  相似文献   
945.
The effect of pulsed photon annealing with energy densities from 1.4 to 42 J/cm2 for various lengths of time on the structure of the amorphous alloy Fe79P14.2Si4.4Mn2.2V0.2 was studied by x-ray diffraction, differential scanning calorimetry, and transmission electron microscopy. The results demonstrate that short-term irradiation with low energy densities leads to surface relaxation of the amorphous alloy, increases the strength of the surface layer, and reduces the internal-friction peak. Longer term photon annealing leads to crystallization of the alloy throughout the sample thickness.  相似文献   
946.
947.
We have studied vortex dynamics in Bi2Sr2CaCu2O8 single crystal with low density columnar defects by using a magnetic force microscope. Single crystal Bi2Sr2CaCu2O8 sample was irradiated by 1.3 GeV uranium ion to form artificial pinning centers along the crystalline c-axis. The irradiation dose corresponded to a matching field of 20 gauss. The radius of an individual vortex is approximately 140 nm, which is close to the penetration depth of this material. Magnetic force microscope (MFM) images show that intrinsic crystalline defects such as stacking fault dislocations are very effective pinning centers for vortices in addition to the pinning centers due to ion bombardment. By counting the number of vortex, we found that the flux trapped at each pinning center is a single flux quantum. At higher magnetic field, the vortex structure showed an Abrikosov lattice disturbed only by immobile vortices located at pinning centers. When increasing or decreasing the external magnetic field, the spatial distribution of vortices showed a Bean model like behavior.  相似文献   
948.
The linear electro-optic response of polymer-dispersed liquid crystal films has been studied. Micrometer-sized droplets of a cyanobiphenyl mixture (E7) were formed in a Norland Optical Adhesive 65 photopolymer by photopolymerization-induced phase separation. Samples with various average nematic droplet sizes were systematically investigated. The temperature dependence of the first-harmonic electro-optic spectra was obtained. Peculiar peaks and double peaks in the phase spectra were found at temperatures close to the clearing point. Samples with narrow distributions of droplet sizes were characterized by a double peak of the amplitude spectra in the low-frequency range. A flexoelectric origin of the first-harmonic spectra in confined nematic systems is discussed.  相似文献   
949.
The new method of a gap recovery in symbol sequences is presented. A covering is combined from the suitable reasonably short strings of the parts of a sequence available for observation. Two criteria are introduced to choose the best covering. It must yield the maximum of entropy of a frequency dictionary developed over the sequence obtained due to the recovery, if an overlapping combined from the copies of strings from the available parts of the sequence exists. The second criterion identifies the best covering in case when one has to use any string to cover the gap; here the best covering must yield the minimum of specific entropy of the frequency dictionary developed over the available parts of the sequence against the one developed over the entire sequence obtained due to the recovery. Kirdin kinetic machine which is the ideal fine-grained structureless computer has been used to resolve the problem of the reconstruction of a gap in symbol sequence.  相似文献   
950.
An experiment is reported on the effect of 60Co gamma rays or 45-keV x-ray photons on the GaAs/(Al, Ga)As PHEMT. It is shown that x-ray treatment can improve the dc performance of the device in some cases. This finding is attributed in part to the annealing or modification of DX centers.  相似文献   
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