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991.
Optimal design of APD biasing circuit 总被引:1,自引:0,他引:1
SUN Chun-sheng QIN Shi-qiao WANG Xing-shu ZHU Dong-hua 《光电子快报》2007,3(3):237-240
This paper proposes a control method for avalanche photodiode(APD) reverse bias with temperature compensation and load resistance compensation. The influence of background light and load resistance on APD detection circuit is analyzed in detail. A theoretical model of temperature compensation and load resistance compensation is established,which is used for APD biasing circuit designing. It is predicted that this control method is especially suitable for LD laser range finder used on vehicles. Experimental results confirm that the design proposed in this paper can considerablely improve the performance of range finder. 相似文献
992.
994.
串行时钟芯片DS1302在温度测量记录仪表中的应用 总被引:2,自引:0,他引:2
对测量仪表中普遍使用的实时时钟技术做了分析,简要介绍了串行时钟芯片DS1302的功能及主要特点,并结合在温度测量记录仪表的应用实例,论述了DS1302的重要作用,详细给出了与单片机STC89C51接口的软硬件设计,通过软硬件实验与调试,总结了应用DS1302的技术难点与注意事项,证明了仪表实时时钟运行的准确性与可靠性。该设计硬件简单可靠,软件编程容易,可方便的移植到其它控制系统中。 相似文献
995.
C.K. Wong J.H.L. Pang J.W. Tew B.K. Lok H.J. Lu F.L. Ng Y.F. Sun 《Microelectronics Reliability》2008,48(4):611-621
This paper examines various aspects of SAC (Sn–3.8Ag–0.7Cu wt.%) solder and UBM interactions which may impact interconnection reliability as it scales down. With different solder joint sizes, the dissolution rate of UBM and IMC growth kinetics will be different. Solder bumps on 250, 80 and 40 μm diameter UBM pads were investigated. The effect of solder volume/pad metallization area (V/A) ratio on IMC growth and Ni dissolution was investigated during reflow soldering and solid state isothermal aging. Higher V/A ratio produced thinner and more fragmented IMC morphology in SAC solder/Ni UBM reflow soldering interfacial reaction. Lower V/A ratio produced better defined IMC layer at the Ni UBM interface. When the ratio of V/A is constant, the IMC morphology and growth trend was found to be similar. After 250 h of isothermal aging, the IMC growth rate of the different bump sizes leveled off. No degradation in shear strength was observed in these solder bump after 500 h of isothermal aging. 相似文献
996.
Qizhen Sun Deming Liu Li Xia Jian Wang Hairong Liu Shum P. 《Photonics Technology Letters, IEEE》2008,20(11):933-935
A novel time-division-multiplexing fiber Bragg grating (FBG) sensor for multipoint temperature warning sensor is proposed and demonstrated. A multiwavelength pulsed laser based on a multichannel matched FBG is employed. The sensor array consists of multiple uniform FBGs at different positions and with different nominal wavelengths. When the temperature exceeds the threshold at a certain position, the light at the corresponding time slot and wavelength can be detected. The sensor provides a simple and flexible solution to locate the abnormal temperature increase with different tolerable thresholds at different locations. 相似文献
997.
Shuli Sun Lihua Xie Wendong Xiao Nan Xiao 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2008,55(7):695-699
998.
This paper presents an external camera method for measuring fingertip forces by imaging the fingernail and surrounding skin. A 3-D model of the fingernail surface and skin is obtained with a stereo camera and laser striping system. Subsequent images from a single camera are registered to the 3-D model by adding fiducial markings to the fingernail. Calibration results with a force sensor show that the measurement range depends on the region of the fingernail and skin. A generalized least squares model is developed to predict fingertip force given coloration changes, and results for normal and shear force measurement are presented. 相似文献
999.
A novel linear switched termination active cross‐coupled low‐voltage differential signaling (LVDS) transceiver operating at 1.5 GHz clock frequency is presented. On the transmitter side, an active cross‐coupled linear output driver and a switched termination scheme are applied to achieve high speed with low current. On the receiver side, a shared preamplifier scheme is employed to reduce power consumption. The proposed LVDS transceiver implemented in an 80 nm CMOS process is successfully demonstrated to provide a data rate of 6 Gbps/pin, an output data window of 147 ps peak‐to‐peak, and a data swing of 196 mV. The power consumption is measured to be 4.2 mW/pin at 1.2 V. 相似文献
1000.
Xianchun Peng Jie Sun Huan Liu Liang Li Qikun Wang Liang Wu Wei Guo Fanping Meng Li Chen Feng Huang Jichun Ye 《半导体学报》2022,43(2):79-85
AIN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing (HTTA) on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the (0002) diffraction peak to as low as 68 arcsec of AIN after HTTA implies a reduction of tilt component inside the AIN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high) Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AIN regardless of sapphire orienta-tion. 相似文献