Effect of microporosity on tensile properties of as-cast AZ91D magnesium alloy

In the present study, the effect of microporosity on the tensile properties of as-cast AZ91D magnesium alloy was investigated through experimental observation and numerical prediction. The test specimens were fabricated by die-casting and gravity-casting. For gravity-casting, the inoculation and use of various metallic moulds were applied to obtain a wide range of microporosity. The deficiency of the interdendritic feeding of the liquid phase acted as a dominant mechanism on the formation of the micropores in the Mg?Al-alloys, rather than the evolution of hydrogen gas. Although tensile strength and elongation has a nonlinear and very intensive dependence upon microporosity, the yield strength appeared to have a linear relationship with microporosity. However, it was possible to quantitatively estimate the linear contribution of microporosity on the individual tensile property for a range of microporosity, which was below about 1%. The numerical prediction suggests that the effect of microporosity on fractured strength and elongation decreased as the strain hardening exponent increased. Furthermore, the shape and distribution of micropores may play a more dominant role than local plastic deformation on the tensile behavior of AZ91D alloy.     

超声波处理和染料结晶性能对粒度分布的影响

超声波是一种频率超越人类听觉范围的声波 ,主要分为动力超声波 ( 1 8ｋＨｚ～ 1ＭＨｚ)和用于诊断的超声波 ( 1ＭＨｚ以上 )。多年以来 ,超声波作为一种辅助工具广泛应用于许多领域 ,从而引起了化学家的极大兴趣。研究表明 ,在纺织品染色过程中 ,超声波能提高反应速率可能归因于超声波的能量 ,有关超声波的应用潜力已有许多文献报道。超声波能提高染色效率主要归因于液体介质中的空化现象 ,这一点已被一致认可。所谓空化现象是指微气泡增长、崩溃、爆炸。Ｍａｓｏｎ指出 ,经超声波辐射的固体粒度显著减小。Ｔｏｍｌｉｓｏｍ和其他工作者也…     

Smart TDI readout circuit for long-wavelength IR detector

A smart time delay and integration (TDI) readout circuit is suggested which performs background suppression, cell-to-cell non-uniformity compensation, and dead pixel correction. Using the smart TDI readout circuit, the integration capacitor area occupying almost the whole area of a unit-cell can be reduced to one-fifth and transimpedance gain can increase by five times. From measurement results, it is found that the skimming current error for a few hundred nA background current is < 1.25 nA corresponding to LSB/2 of ADC and the non-uniformity introduced by cell-to-cell background current variation is reduced to 1.02 nA     

Nondestructive evaluation of the characteristics of degraded materials using backward radiated ultrasound

The frequency dependency of Rayleigh surface wave is investigated indirectly by measuring the angular dependency of the backward radiation of the incident ultrasonic wave in two kinds of degraded specimens by scuffing or corrosion. Then, the frequency dependency is compared with the residual stress distribution or the corrosion-fatigue characteristics for the scuffed or corroded specimens, respectively. The width of the backward radiation profile increases with the increase of the variation in residual stress distribution for the scuffed specimens. In the corroded specimens, the profile width decreases with the increase of the effective aging layer thickness and is inversely proportional to the exponent, m, in the Paris’ law that can predict the crack size increase due to fatigue. The result observed in this study demonstrates high potential of backward radiated ultrasound as a tool for nondestructive evaluation of subsurface gradient of material degradation generated by scuffing or corrosion.     

Effects of solidification structure on fatigue crack initiation and fatigue strength in Al−Si−Mg cast alloys

Rotating-bending uniaxial fatigue tests and micro-fatigue crack initiation tests were carried out using a permanent mold cast (PMC) and semi-solid die cast (SDC) with Al−7%Si−0.35%Mg composition in order to examine the relationship between solidification structures and fatigue behaviors. The crack length was measured using a replication method. Fatigue strength was improved in SDC, which was almost consistent with the predicted fatigue strength using the size of Si particle cluster. Resistance to fatigue crack initiation and fatigue strength were improved in SDC owing to the finer Si cluster and to higher ultimate tensile strength. Fatigue crack in PMC was preferentially initiated at pores. For SDC, the fatigue crack was initiated at the Si particle/matrix interface, and then sucessively grew along eutectic cell boundaries.     

Low-Temperature Materials and Thin Film Transistors for Flexible Electronics

This paper addresses the low-temperature deposition processes and electronic properties of silicon based thin film semiconductors and dielectrics to enable the fabrication of mechanically flexible electronic devices on plastic substrates. Device quality amorphous hydrogenated silicon (a-Si:H), nanocrystalline silicon (nc-Si), and amorphous silicon nitride (a-SiN/sub x/) films and thin film transistors (TFTs) were made using existing industrial plasma deposition equipment at the process temperatures as low as 75/spl deg/C and 120/spl deg/C. The a-Si:H TFTs fabricated at 120/spl deg/C demonstrate performance similar to their high-temperature counterparts, including the field effect mobility (/spl mu//sub FE/) of 0.8 cm/sup 2/V/sup -1/s/sup -1/, the threshold voltage (V/sub T/) of 4.5 V, and the subthreshold slope of 0.5 V/dec, and can be used in active matrix (AM) displays including organic light emitting diode (OLED) displays. The a-Si:H TFTs fabricated at 75/spl deg/C exhibit /spl mu//sub FE/ of 0.6 cm/sup 2/V/sup -1/s/sup -1/, and V/sub T/ of 4 V. It is shown that further improvement in TFT performance can be achieved by using n/sup +/ nc-Si contact layers and plasma treatments of the interface between the gate dielectric and the channel layer. The results demonstrate that with appropriate process optimization, the large area thin film Si technology suits well the fabrication of electronic devices on low-cost plastic substrates.     

Highly Efficient Orange and Green Solid‐State Light‐Emitting Electrochemical Cells Based on Cationic IrIII Complexes with Enhanced Steric Hindrance

Highly efficient orange and green emission from single‐layered solid‐state light‐emitting electrochemical cells based on cationic transition‐metal complexes [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ (where ppy is 2‐phenylpyridine, dFppy is 2‐(2,4‐difluorophenyl)pyridine, and sb is 4,5‐diaza‐9,9′‐spirobifluorene) is reported. Photoluminescence measurements show highly retained quantum yields for [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂ sb]PF₆ in neat films (compared with quantum yields of these complexes dispersed in m‐bis(N‐carbazolyl)benzene films). The spiroconfigured sb ligands effectively enhance the steric hindrance of the complexes and reduce the self‐quenching effect. The devices that use single‐layered neat films of [Ir(ppy)₂sb]PF₆ and [Ir(dFppy)₂sb]PF₆ achieve high peak external quantum efficiencies and power efficiencies of 7.1 % and 22.6 lm W^–1) at 2.5 V, and 7.1 % and 26.2 lm W^–1 at 2.8 V, respectively. These efficiencies are among the highest reported for solid‐state light‐emitting electrochemical cells, and indicate that cationic transition‐metal complexes containing ligands with good steric hindrance are excellent candidates for highly efficient solid‐state electrochemical cells.     

Waveband-switchable SOA ring laser constructed with a phase modulator loop mirror filter

An electrically tunable multiwavelength source has been developed using a birefringence-based optical comb filter in a semiconductor optical amplifier ring laser. The filter is constructed with an electrooptic phase modulator placed inside a fiber loop mirror. By controlling the birefringence of the modulator through the applied bias, the radio-frequency power, or the modulation frequency, we achieve a continuous shift of the spectral comb to access different interleaved wavebands. Electrical waveband switching has been successfully demonstrated for 21 wavelengths at 100-GHz grid spacing with an optical signal-to-noise ratio over 40 dB.     

A 0.9 V 92 dB Double-Sampled Switched-RC Delta-Sigma Audio ADC

A 0.9 V third-order double-sampled delta-sigma audio ADC is presented. A new method using a combination of a switched-RC technique and a floating switched-capacitor double-sampling configuration enabled low-voltage operation without clock boosting or bootstrapping. A three-level quantizer with simple dynamic element matching was used to improve linearity. The prototype IC implemented in a 0.13 CMOS process achieves 92 dB DR, 91 dB SNR and 89 dB SNDR in a 24 kHz audio signal bandwidth, while consuming 1.5 mW from a 0.9 V supply. The prototype operates from 0.65 V to 1.5 V supply with minimal performance degradation.