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21.
Mitochondrial oxidative damage and dysfunction contribute to a wide range of human diseases. Considering the limitation of conventional antioxidants and that mitochondria are the main source of reactive oxygen species (ROS) which induce oxidative damage, mitochondria-targeted antioxidants which can selectively block mitochondrial oxidative damage and prevent various types of cell death have been widely developed. As a lipophilic cation, triphenylphosphonium (TPP) has been commonly used in designing mitochondria-targeted antioxidants. Conjugated with the TPP moiety, antioxidants can achieve more than 1000-fold higher mitochondrial concentration depending on cell membrane potentials and mitochondrial membrane potentials. Herein we discuss the deficiencies of conventional antioxidants and the advantages of mitochondrial targeting, and review various types of TPP-based mitochondria-targeted antioxidants. These provide theoretical and background support for the design of new anti-oxidant.  相似文献   
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Spinel LiSr0·1Cr0·1Mn1·8O4 was synthesised by high temperature solid state method in order to enhance the electrochemical performance. The LiSr0·1Cr0·1Mn1·8O4 (LSCMO) materials were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical tests. The XRD and SEM studies confirm that LSCMO had spinel crystal structure with a space group of Fd3m, and the particle of LSCMO shows irregular shape. The cyclic voltammetry data illustrated that the heavy current charge–discharge performance of LMO was improved by Sr2+ and Cr3+ doping. The galvanostatic charge–discharge of LSCMO cathode materials was measured at 1, 5, 10 and 20 C. The results indicated that LSCMO improved the capacity retention.  相似文献   
24.
Tian  J. Y.  Xu  G.  Hu  H. J.  Zhou  M. X. 《Strength of Materials》2019,51(3):439-449
Strength of Materials - A metallographic method, dilatometry, and X-ray diffraction were applied to investigate the effects of undercooling and holding time on bainitic transformation,...  相似文献   
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In this work, the sintering behaviour of fluorapatite (FAp)–silicate composites prepared by mixing variable amounts of natural quartz (2.5 wt% to 20 wt%) and FAp was studied. The composites were pressureless sintered in air at temperatures from 1000 °C to 1350 °C. The effects of temperatures on the densification, phase formation, chemical bonding and Vickers hardness of the composites were evaluated. All the samples exhibited mixed phase, comprising FAp and francolite as the major constituents along with some minor phases of cristobalite, wollastonite, dicalcium silicate and/or whitlockite dependent on the quartz content and sintering temperature. The composite containing 2.5 wt% quartz exhibited the best sintering properties. The highest bulk density of 3 g/cm3 and a Vickers hardness of >4.2 GPa were obtained for the 2.5 wt% quartz–FAp composite when sintered at 1100 °C. The addition of quartz was found to alter the microstructure of the composites, where it exhibited a rod-like morphology when sintered at 1000 °C and a regular rounded grain structure when sintered at 1350 °C. A wetted grain surface was observed for composites containing high quartz content and was believed to be associated with a transient liquid phase sintering.  相似文献   
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Machine Learning - We propose a set of highly scalable algorithms for the combinatorial data analysis problem of seriating similarity matrices. Seriation consists of finding a permutation of data...  相似文献   
27.
Orduna-Malea  Enrique  Aytac  Selenay  Tran  Clara Y. 《Scientometrics》2019,121(1):433-450
Scientometrics - The purpose of this study is to ascertain the suitability of GS’s url-based method as a valid approximation of universities’ academic output measures, taking into...  相似文献   
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Ghosh  Puja  Bhowmick  Brinda 《SILICON》2020,12(5):1137-1144

This paper addresses reliability issues associated with temperature of Ferroelectric Dopant Segregated Schottky Barrier Tunnel Field Effect Transistor (Fe DS-SBTFET). The simulated results are compared with Dopant Segregated Schottky Barrier TFET (DS-SBTFET). This is achieved by varying the operating temperature from 300 to 500 K. DC parameters such as ION/IOFF ratio, drain current characteristics and subthreshold swing (SS) for a range of temperature have been highlighted. Moreover, the influence of temperature on various RF figure of merits such as gate capacitance (CGG), intrinsic delay, cutoff frequency (fT) etc. have been investigated. The device linearity has been analyzed by considering the effect of temperature variation on linearity parameters like gm2, gm3, 1-dB compression point, VIP2, VIP3 and IIP3. The device characteristics get upgraded by the increase in cut-off frequency and reduction in intrinsic delay at elevated temperature.

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