4D Printing of a Bioinspired Microneedle Array with Backward‐Facing Barbs for Enhanced Tissue Adhesion

Microneedle (MN), a miniaturized needle with a length‐scale of hundreds of micrometers, has received a great deal of attention because of its minimally invasive, pain‐free, and easy‐to‐use nature. However, a major challenge for controlled long‐term drug delivery or biosensing using MN is its low tissue adhesion. Although microscopic structures with high tissue adhesion are found from living creatures in nature (e.g., microhooks of parasites, barbed stingers of honeybees, quills of porcupines), creating MNs with such complex microscopic features is still challenging with traditional fabrication methods. Here, a MN with bioinspired backward‐facing curved barbs for enhanced tissue adhesion, manufactured by a digital light processing 3D printing technique, is presented. Backward‐facing barbs on a MN are created by desolvation‐induced deformation utilizing cross‐linking density gradient in a photocurable polymer. Barb thickness and bending curvature are controlled by printing parameters and material composition. It is demonstrated that tissue adhesion of a backward‐facing barbed MN is 18 times stronger than that of barbless MN. Also demonstrated is sustained drug release with barbed MNs in tissue. Improved tissue adhesion of the bioinspired MN allows for more stable and robust performance for drug delivery, biofluid collection, and biosensing.     

Design of Engineered Elastomeric Substrate for Stretchable Active Devices and Sensors

In the field of flexible electronics, emerging applications require biocompatible and unobtrusive devices, which can withstand different modes of mechanical deformation and achieve low complexity in the fabrication process. Here, the fabrication of a mesa‐shaped elastomeric substrate, supporting thin‐film transistors (TFTs) and logic circuits (inverters), is reported. High‐relief structures are designed to minimize the strain experienced by the electronics, which are fabricated directly on the pillars' surface. In this design configuration, devices based on amorphous indium‐gallium‐zinc‐oxide can withstand different modes of deformation. Bending, stretching, and twisting experiments up to 6 mm radius, 20% uniaxial strain, and 180° global twisting, respectively, are performed to show stable electrical performance of the TFTs. Similarly, a fully integrated digital inverter is tested while stretched up to 20% elongation. As a proof of the versatility of mesa‐shaped geometry, a biocompatible and stretchable sensor for temperature mapping is also realized. Using pectin, which is a temperature‐sensitive material present in plant cells, the response of the sensor shows current modulation from 13 to 28 °C and functionality up to 15% strain. These results demonstrate the performance of highly flexible electronics for a broad variety of applications, including smart skin and health monitoring.     

Smashing OpenFlow's “atomic” actions: Programmable data plane packet manipulation in hardware

Recently, with new hardware architectures such as Reconfigurable Match Tables and languages such as P4, the Software Defined Networking community has started to bring line‐rate data plane programmability inside switching chipsets. Starting from the original OpenFlow's match/action abstraction, most of the work has so far focused on key improvements in matching flexibility. Conversely, the “action part,” ie, the set of operations (such as encapsulation or header manipulation) performed on packets after the forwarding decision, has received way less attention. Goal of this paper is to move beyond the idea of “atomic,” preimplemented, actions, and rather make them programmable while retaining high speed multi‐Gbps operation. To this purpose, we propose a domain‐specific HW architecture, called Packet Manipulation Processor (PMP), able to efficiently implement such actions. Both a PMP C++ instruction set simulator and a NetFPGA prototype have been developed. The performances of the PMP have been verified with three nontrivial use cases (tunneling, NAT, and ARP reply generation), showing that also in the worst case the throughput is well above 10 Gbps.     

Non‐Covalent Functionalization of Graphene Using Self‐Assembly of Alkane‐Amines

A simple, versatile method for non‐covalent functionalization of graphene based on solution‐phase assembly of alkane‐amine layers is presented. Second‐order Møller–Plesset (MP2) perturbation theory on a cluster model (methylamine on pyrene) yields a binding energy of ≈220 meV for the amine–graphene interaction, which is strong enough to enable formation of a stable aminodecane layer at room temperature. Atomistic molecular dynamics simulations on an assembly of 1‐aminodecane molecules indicate that a self‐assembled monolayer can form, with the alkane chains oriented perpendicular to the graphene basal plane. The calculated monolayer height (≈1.7 nm) is in good agreement with atomic force microscopy data acquired for graphene functionalized with 1‐aminodecane, which yield a continuous layer with mean thickness ≈1.7 nm, albeit with some island defects. Raman data also confirm that self‐assembly of alkane‐amines is a non‐covalent process, i.e., it does not perturb the sp² hybridization of the graphene. Passivation and adsorbate n‐doping of graphene field‐effect devices using 1‐aminodecane, as well as high‐density binding of plasmonic metal nanoparticles and seeded atomic layer deposition of inorganic dielectrics using 1,10‐diaminodecane are also reported.     

Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

A detailed study of the carrier trapping properties shown by the silicon/oxynitride/oxide gate layers in PowerVDMOS technologies is reported. A quantitative analysis of hole and electron trap densities versus the specific N₂O based nitridation process, extracted from Fowler–Nordheim constant current stress kinetics, allows a deep understanding of the role played by those defects in the susceptibility of every nitrided layer.     

A polyfluoroalkyl imidazolium ionic liquid as iodide ion source in dye sensitized solar cells

We report on the use of a fluorinated imidazolium ionic liquid as a source of iodide ions in solvent-based electrolytes for DSSCs. Efficient dye regeneration and fast charge transport in the fluorinated electrolyte result in an overall improvement of the device performances compared to conventional hydrogenated ionic liquids.     

Artistic edge and corner enhancing smoothing.

Two important visual properties of paintings and painting-like images are the absence of texture details and the increased sharpness of edges as compared to photographic images. Painting-like artistic effects can be achieved from photographic images by filters that smooth out texture details, while preserving or enhancing edges and corners. However, not all edge preserving smoothers are suitable for this purpose. We present a simple nonlinear local operator that generalizes both the well known Kuwahara filter and the more general class of filters known in the literature as "criterion and value filter structure." This class of operators suffers from intrinsic theoretical limitations which give rise to a dramatic instability in presence of noise, especially on shadowed areas. Such limitations are discussed in the paper and overcome by the proposed operator. A large variety of experimental results shows that the output of the proposed operator is visually similar to a painting. Comparisons with existing techniques on a large set of natural images highlight conditions on which traditional edge preserving smoothers fail, whereas our approach produces good results. In particular, unlike many other well established approaches, the proposed operator is robust to degradations of the input image such as blurring and noise contamination.     

Layer‐by‐Layer All‐Inorganic Quantum‐Dot‐Based LEDs: A Simple Procedure with Robust Performance

A novel all‐inorganic electroluminescent device is demonstrated based on highly luminescent CdTe nanocrystals intercalated within a laminar hydrotalcite‐like structure. The laminar scaffold acts to both support and distribute the CdTe nanocrystals. The device is synthesized using simple wet chemical processes at room temperature in ambient conditions. It has high thermal stability, operating continuously up to 90 °C, and a maximum efficiency at J = 0.12 A cm^?2. The device is targeted at the automotive industry.     

Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS

A deep analysis of the intrinsic junction and surface currents in power vertically diffused MOS devices with sub-micrometer channel length and thin gate oxide has been carried on after a typical reliability high temperature reverse bias (HTRB) stress. A reference set of gated diodes has also been examined in order to better understand the onset and evolution of post-stress leakage degradation. A comparison among complete MOSs, single body diodes and enriched diodes allows to highlight the role played by the point defectivity both at gate interface and in the bulk silicon close to the junction surface. We found that the typical interface defects involved in the leakage degradation are shallow traps and can be de-populated simply by a thermally activated mechanism. More specifically, the main degradation mechanism relies to band-defect-band tunneling localized at the surface drain/body junction where an intrinsic n-i-p region evolves due to a bird’s beak lateral profile of the body diffusion. We have demonstrated that the most important contribution to the activation of the precursor defect sites is given by the transverse electrical field that develops just below the SiO₂/Si interface within the n-i-p region during the stress.