Grain Size and Texture of Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> Thin Films Synthesized by Cosputtering Binary Sulfides and Annealing: Effects of Processing Conditions and Sodium

We investigate the synthesis of kesterite Cu₂ZnSnS₄ (CZTS) polycrystalline thin films using cosputtering from binary sulfide targets followed by annealing in sulfur vapor at 500°C to 650°C. The films are the kesterite CZTS phase as indicated by x-ray diffraction, Raman scattering, and optical absorption measurements. The films exhibit (112) fiber texture and preferred low-angle and Σ3 grain boundary populations which have been demonstrated to reduce recombination in Cu(In,Ga)Se₂ and CdTe films. The grain growth kinetics are investigated as functions of temperature and the addition of Na. Significantly, lateral grain sizes above 1 μm are demonstrated for samples grown on Na-free glass, demonstrating the feasibility for CZTS growth on substrates other than soda lime glass.     

Proteins and trypsin inhibitor activity of guar (Cyamopsis tetragonoloba L. Taub) seed

Proteins soluble in tris-acetate buffer (pH9.0) were fractionated by DEAE-cellulose, DEAE-Sephadex A-50 and Sephadex G-200 column chromatography. The purified proteins which contained 5–6% carbohydrate, had molecular weights of 125 900 and 22 390 amu. The high molecular weight fraction was homogeneous by polyacrylamide gel electrophoresis. Proteins extracted in phosphate buffer (0.1M , pH7.6) when subjected to Sephadex G-200 gel chromatography were resolved into three fractions, all of which showed considerable trypsin inhibitor activity. Germination for 3 days reduced the trypsin inhibitor activity of the seed by about 30%.     

A media access and feedback protocol for reliable multicast over wireless channel

A link level reliable multicast requires a channel access protocol to resolve the collision of feedback messages sent by multicast data receivers. Several deterministic media access control protocols have been proposed to attain high reliability, but with large delay. Besides, there are also protocols which can only give probabilistic guarantee about reliability, but have the least delay. In this paper, we propose a virtual token-based channel access and feedback protocol (VTCAF) for link level reliable multicasting. The VTCAF protocol introduces a virtual (implicit) token passing mechanism based on carrier sensing to avoid the collision between feedback messages. The delay performance is improved in VTCAF protocol by reducing the number of feedback messages. Besides, the VTCAF protocol is parametric in nature and can easily trade off reliability with the delay as per the requirement of the underlying application. Such a cross layer design approach would be useful for a variety of multicast applications which require reliable communication with different levels of reliability and delay performance. We have analyzed our protocol to evaluate various performance parameters at different packet loss rate and compared its performance with those of others. Our protocol has also been simulated using Castalia network simulator to evaluate the same performance parameters. Simulation and analytical results together show that the VTCAF protocol is able to considerably reduce average access delay while ensuring very high reliability at the same time.     

Resource requirements and layouts for field programmableinterconnection chips

Field-programmable interconnection chips (FPIC's) provide the capability of realizing user programmable interconnection for any desired permutation. Such an interconnection is very much desired for supporting rapid prototyping of hardware systems and for providing programmable communication networks for parallel and distributed computing. An FPIC should realize any possible permutation of input to output pins via a set of programmable switches. In this paper, we show that any such architecture requires a minimum of Ω(n log n) switches, where Ω is the number of I/O pins. The result stems from an analysis of the underlying permutation network. In addition, for networks of bounded degree d, we prove an Ω(log_d-1 n) bound on the routing delay (maximum length of routing paths for specific I/O permutations) and an Ω(n log_d-1 n) bound on the average utilization of programmable switches used by the FPIC to implement a specific permutation. For the same type of networks, we prove an Ω(n log_d-1 n) bound on the number of nodes of the network. Furthermore, we design efficient architectures for FPIC's offering a wide variety of routing delays, high average programmable resource utilization, and O(n²)-area two-layer layouts. The proposed structures are called hybrid Benes-Crossbar (HBC) architectures and clearly exhibit a tradeoff between performance (routing delay utilization) and area of the layout     

A distributed control architecture of high-speed networks

A control architecture for a high-speed packet-switched network is described. The architecture was designed and implemented as part of the PARIS (subsequently plaNET and BBNS) networking project at IBM. This high bandwidth network for integrated communication (data, voice, video) is currently operational as a laboratory prototype. It will also be deployed within the AURORA Testbed that is part of the NSF/DARPA gigabit networking program. The high bandwidth dictates the need for specialized hardware to support faster packet handling for both point-to-point and multicast connections. A faster and more efficient network control is also required in order to support the increased number of connections and their changing requirements with time. The new network control architecture presented exploits specialized hardware, thereby enabling tasks to be performed faster and with less computation overhead. In particular, since control information can be distributed quickly using hardware packet handling mechanisms, decisions can be made based upon more complete and accurate information. In some respects, this has the effect of having the benefits of centralized control (e.g., easier bandwidth resource allocation to connections), while retaining the fault tolerance and scalability of a distributed architecture     

Modeling of the zero-bias resistance-area product of long wavelength infrared HgCdTe-on-Si diodes fabricated from molecular beam epitaxy-grown epitaxial layers

The electrical effects of dislocations has been studied by modeling zero-bias resistance-area product (R₀A) of long wavelength infrared diodes fabricated in molecular beam epitaxy (MBE)-grown HgCdTe-Si epitaxial films. Results show that dislocations influence both 40 K and 78 K R₀A products in high dislocation density (HgCdTe/Si) material. In low dislocation density samples (HgCdTe/CdZnTe), the variations in 78 K R₀A are limited by the composition (x) variations in Hg_1-xCd_xTe material, whereas dislocation contribution dominates the variations at 40 K. The origin of relatively large spread in 40 K R₀A in both types of samples is traced to the statistical variations in the core charges of dislocations. It is concluded that additional alternatives besides the reduction of dislocation density (such as control of core charges), may also need attention in order to make Si a viable substrate material for the growth of HgCdTe epitaxial layers suitable for devices operating at 40 K.     

A Novel Electroless Process for Embedding a Thin Film Resistor on the Benzocyclobutene Dielectric

To realize embedded resistors on multilayer benzocyclobutene (BCB) either on-chip or on-board, a low-cost large format electroless process for deposition of NiP and NiWP thin-film resistors using both low-temperature (25°C) and high-temperature (90°C) baths has been developed. The electroless process exhibits uniform resistor thickness in the submicron range and offers low profile and excellent adhesion to the BCB dielectric layer. The resistor films also act as a seed layer for direct electroplating of copper traces. The NiP alloys can also be tailored to a variable temperature coefficient of resistance (TCR) with different alloy compositions. The electroless process can be adopted in the PCB manufacturing industries with no additional investment. This article is the first report on electroless plated thin film resistors on low loss BCB dielectric.     

Preparation and characterization of the N and C monoferric lobes of buffalo lactoferrin produced by proteolysis using proteinase K

The two glycosylated N- and C-terminal lobes of buffalo lactoferrin have been produced by limited proteolysis using proteinase K. Lactoferrin is a single chain glycoprotein of molecular mass 80 kDa with two iron-binding sites and two structural lobes connected by a short peptide. Purified samples of lactoferrin, isolated from buffalo colostrum, were subjected to hydrolysis using trypsin, chymotrypsin, pepsin, subtilisin and proteinase K. The first three proteinases produced two major fragments of approximately 35 and 23 kDa together with small molecular mass peptides. Trypsin and chymotrypsin partly digested lactoferrin, while pepsin converted all the intact lactoferrin into fragments. Subtilisin hydrolysis produced fragments of 40 and 26 kDa together with low molecular mass peptides. However, SDS-PAGE of the proteinase K hydrolysis product gave a clear band at 40 kDa together with a band indicating a substantial quantity of low molecular mass peptides (< 14.4 kDa). Upon ion-exchange chromatography this product gave two major fractions, which were further purified by gel filtration and identified as the C and N lobes from their N-terminal sequences. Thus, the 40 kDa band in SDS-PAGE of the proteinase K hydrolysis product contained two fragments of equal molecular mass. On further hydrolysis with proteinase K, the N lobe was completely hydrolysed into low molecular mass peptides, while only a small fraction of the C lobe was converted into small products. This suggested that an inhibitory fragment was present in the C lobe that was released on hydrolysis to small fragments and prevented complete digestion of the C lobe by high-affinity binding to the active site of proteinase K. This fragment was isolated from the lactoferrin-proteinase K complex and its sequence determined to be Val-Ala-Gln-Gly-Gly-Ala-Ala-Gly-Leu-Ala. Circular dichroism studies indicated a high alpha-helical content in the native lactoferrin while comparatively lower helical structures were present in the N and C lobes. In addition, the iron saturations of the N and C lobes appeared to be lower than that of the native protein.     

Software defined vehicular networks: A comprehensive review

The recent breakthroughs in the automobile industries and telecommunication technologies along with the exceptional multimodal mobility services brought focus on intelligent transportation system (ITS), of which vehicular ad hoc networks (VANETs) gain much more attention. The distinctive features of software‐defined networking (SDN) leverages the vehicular networks by its state of the centralized art having a comprehensive view of the network. Its potential to bring the flexibility, programmability and other extensive advancements to vehicular networks has set the stage for a novel networking paradigm termed as software‐defined vehicular networks (SDVNs). Many researchers have demonstrated the SDN‐based VANETs with the various configuration of the SDN components in VANET architecture. However, a compilation of the work on the SDN‐based VANET system as a whole, incorporating its architecture, use‐cases, and opportunities, is still inadequate. We start with the summary of the recent studies that exist on the SDVNs, followed by the comprehensive explanation of its components. Next, we present the taxonomy of SDVN based on the architecture modes, protocols, access technologies, and opportunities with trending technologies. Finally, we highlight the challenges, open research issues, and future research directions.     

Realization of very long wavelength infrared photovoltaic detector arrays on mercury cadmium telluride epitaxial layers grown on Si substrates

This paper proposes a development of n-on-p structures for realizing very long wavelength infrared (VLWIR) detector arrays on mercury cadmium telluride (HgCdTe) epitaxial layers grown on Si substrates. It is shown from a comparative study of zero-bias resistance-area product (R₀A) of diodes in n-on-p and p-on-n configurations that the n-on-p structure has promising potential to control contribution of dislocations, without actually reducing dislocation density below the current level (mid-10⁶ cm⁻²) of HgCdTe/Si material technology. The resulting gain will be in terms of both higher numerical magnitudes of R₀A and its reduced scatter.