TiO2 nano-flakes with high activity obtained from phosphorus doped TiO2 nanoparticles by hydrothermal method

TiO₂ nano-wires (Ti-NWs) and nano-flakes (Ti-NFs) were obtained from phosphorus doped TiO₂ nanoparticles (Ti-P) by hydrothermal method and by subsequent heat treatment respectively. FE-SEM micrograph of the as prepared sample depicts well formed, entangled and randomly oriented nano-wires morphology, which changes to nano-flakes morphology after heat treatment. Structural characterization of the samples by X-ray diffraction shows anatase phase for both the samples. Absorption edge of the Ti-NWs sample shows blueshift where as the Ti-NFs sample exhibit redshift compared to precursor sample as evidenced by UV–Visible absorption spectra, which is due to change in morphology and crystallinity of the samples. XPS studies indicate the presence of titanium and oxygen species only. From the EPR measurements with in-situ visible light irradiation, the number of photogenerated charge carriers is found to be very high for nano-flakes sample. Methyleneblue degradation profiles depict very high activity of Ti-NFs sample compared to Ti-NWs and the precursor samples, which is due to the observed redshift in the absorption edge, change in morphology and high crystallinity of the sample which in turn increases the optical response and separation of photogenerated charge carriers as evidenced by the optical and EPR measurements respectively.     

Electron-electron scattering and ultrasonic attenuation in potassium

The electron-electron scattering contribution to the ultrasonic attenuation in potassium at low temperatures is evaluated using the Landau Fermi liquid theory. The scattering function is evaluated using the approximation suggested by MacDonald and Geldart. The results are compared with theoretically evaluated electron-phonon scattering contributions. The results show that the electron-electron scattering contribution is of the same order as the electron-phonon scattering contribution in the 2–5 K range. Below 2 K the electron-electron scattering predominates.     

Near-Field Scanning Nanophotonic Microscopy—Breaking the Diffraction Limit Using Integrated Nano Light-Emitting Probe Tip

We introduce a novel scanning ldquonanophotonicrdquo microscope through monolithic integration of a nanoscale LED (Nano-LED) on a silicon cantilever. We review two recent trends of incorporating miniature light sources on the scanning probes for near-field scanning optical microscopy: one is to attach fluorephores at the tip to define a small light source, while the other is to integrate an LED and a nanometer aperture into scanning probes, based on silicon microfabrication techniques. The creation of Nano-LED combines the advantages of previous two approaches: no external sources are required and the reduction of the light source size directly leads to resolution improvement. Two types of Nano-LEDs have been successfully demonstrated utilizing nanofabrication and microelectromechanical systems technologies: 1) formation of thin silicon dioxide light-emitting layer between heavily doped p + and n+ silicon layers created by a focused ion beam and 2) electrostatic trapping and excitation of CdSe/ZnS core-shell nanoparticles in a nanogap. We employed these probes into a standard near-field scanning and excitation setup. The probe successfully measured optical as well as topographic images of chromium test patterns with imaging resolutions of 400 and 50 nm, respectively. In addition, the directional resolution dependence of the acquired images suggests the size and shape of the light source. To our knowledge, these results are probably the first successful near-field images directly measured by such tip-embedded light sources. With the potential emission capability from near UV to IR and additional mass producibility, the nanophotonic microscope presents exciting opportunities in near-field optics, integrated circuit technology, nanomanufacturing and molecular imaging, and sensing in biomedicine.     

Genome-Wide Identification and Characterization of PIN-FORMED (PIN) Gene Family Reveals Role in Developmental and Various Stress Conditions in Triticum aestivum L.

PIN-FORMED (PIN) genes play a crucial role in regulating polar auxin distribution in diverse developmental processes, including tropic responses, embryogenesis, tissue differentiation, and organogenesis. However, the role of PIN-mediated auxin transport in various plant species is poorly understood. Currently, no information is available about this gene family in wheat (Triticum aestivum L.). In the present investigation, we identified the PIN gene family in wheat to understand the evolution of PIN-mediated auxin transport and its role in various developmental processes and under different biotic and abiotic stress conditions. In this study, we performed genome-wide analysis of the PIN gene family in common wheat and identified 44 TaPIN genes through a homology search, further characterizing them to understand their structure, function, and distribution across various tissues. Phylogenetic analyses led to the classification of TaPIN genes into seven different groups, providing evidence of an evolutionary relationship with Arabidopsis thaliana and Oryza sativa. A gene exon/intron structure analysis showed a distinct evolutionary path and predicted the possible gene duplication events. Further, the physical and biochemical properties, conserved motifs, chromosomal, subcellular localization, transmembrane domains, and three-dimensional (3D) structure were also examined using various computational approaches. Cis-elements analysis of TaPIN genes showed that TaPIN promoters consist of phytohormone, plant growth and development, and stress-related cis-elements. In addition, expression profile analysis also revealed that the expression patterns of the TaPIN genes were different in different tissues and developmental stages. Several members of the TaPIN family were induced during biotic and abiotic stress. Moreover, the expression patterns of TaPIN genes were verified by qRT-PCR. The qRT-PCR results also show a similar expression with slight variation. Therefore, the outcome of this study provides basic genomic information on the expression of the TaPIN gene family and will pave the way for dissecting the precise role of TaPINs in plant developmental processes and different stress conditions.     

Influence of Synthesis Conditions and Cerium Incorporation on the Properties of Zr-Pillared Clays

Zr-pillared clays were prepared from ZrOCl₂ pillaring solutions by adopting different preparative conditions. Ce³⁺ ions are introduced to Zr-pillared clays by co-intercalation method. The resulting samples were characterized by XRD, TGA, N₂ sorption and UV-VIS-Diffuse reflectance spectroscopy techniques. Basal spacings in the range of 18–21 Å were observed depending upon the preparative condition. TG analysis shows three weight loss regions corresponding to removal of various types of water molecules. All pillared clays show Type-I sorption isotherm typical of microporous materials. Pillaring under refluxing condition is found to have beneficial effect on the surface area and pore volume of the Zr-pillared clay. The chemical environment and location of Ce³⁺ ions is studied by UV-VIS-DRS. The Ce³⁺ ions are found to be present in the micropores of the Zr-pillared clays. However heat treatment at higher temperature may result in peripheral interaction between Ce³⁺ ions and Zr-pillars. Catalytic activity of these pillared clays was evaluated for cyclohexanol dehydration which correlates well with the Brønsted acidity of these materials. The Zr-Pillared clay containing Ce³⁺ ions show good catalytic activity and stability with reaction time which has been ascribed to the stabilazition of the Brønsted acidic centers.     

Wire Electric Discharge Machining of Silica Rich E-waste CRT and BN Reinforced Hybrid Magnesium MMC

Silicon - The current work presents an experimental investigation and multi objective optimization of material and WEDM machining features for better surface finish (Ra) and material removal rate...     

Sol- gel synthesis of Ga2O3 nanorods and effect of precursor chemistry on their structural and morphological properties

Synthesis of mono-crystalline Ga₂O₃ Nanorods was done by sol-gel transformation of gallium(III) isopropoxide (Ga(OPrⁱ)₃). XRD studies were done to determine the planes and crystal structure of synthesized nanorods that showed the synthesis of β-Ga₂O₃(a). TEM studies of synthesized Ga₂O₃ confirmed the synthesis of monocrystalline β-Ga₂O₃ nanorods. To study the effect of precursor chemistry and to determine role of precursor structures on the crystal structure, phase and morphology of the Ga₂O₃, a new modified precursor complex was synthesized. The reaction of Ga(OPrⁱ)₃ with N-phenylsalicylaldimine, [C₆H₄(OH)CH=N(C₆H₅)] in 1:1?M ratio yielded [{(H₅C₆)N?=?CH-C₆H₄O}Ga(OPrⁱ)₂]. The newly synthesized complex was characterized by elemental analyses, molecular weight measurement, FT-IR and NMR (¹H and ¹³C) spectral studies. Spectral studies of the modified complex suggest the presence of bi-dentate mode of attachment of Schiff's base in the solution state. Sol-gel transformations of [{(H₅C₆)N?=?CH-C₆H₄O}Ga(OPrⁱ)₂] in organic medium, yielded γ-Ga₂O₃(b), as found by XRD studies. TEM image of the sample (a) revealed the formation of nano-rods of oxide with average diameter of ~100?nm whereas the TEM image of sample (b) showed presence of nano-sized particles of oxide with average particle size of 10?nm. Morphological and compositional studies of synthesized samples (a) and (b) were carried out using SEM and EDX. The method provides a possibility of large scale synthesis of dissimilar shaped and pure Ga₂O₃ nanoparticles.     

Microwave dielectric properties of barium substituted screen printed CaBi2Nb2O9 ceramic thick films

In the present study, Aurivillius-structured Ba²⁺ substituted CaBi₂Nb₂O₉ (CBNO) ceramic powder was synthesized by co-precipitation method. The CBNO thick films were delineated by screen printing method on alumina substrates using co-precipitated ceramic powder. The overlay method was adopted to measure the microwave dielectric properties of prepared thick films. Single phase layered perovskite structure of the prepared thick films was confirmed by X-ray Diffraction. The effects of Ba²⁺ substitution on the surface morphology, bonding, and microwave dielectric properties of thick films were systematically presented. The maximum value of microwave dielectric constant for the CBNO thick films at 11.8 GHz is 15.6 for Ba²⁺=0.8 substitution. The shift in the stretching vibration modes of the Nb-O bond of NbO₆ octahedron in the Raman spectra with a substitution of Ba²⁺ in CBNO was observed. The substitution of Ba²⁺ on A-site of CBNO improves the microwave dielectric properties of prepared thick films. This work may provide a new approach to enhance the microwave dielectric performance of Aurivillius-structured ceramic thick films.