The prospects of non-volatile phase-change RAM

Phase-change read-and-write memory (PRAM) is a promising memory that can solve the problems of conventional memory—scalability, read/write speed, and reliability. We will review the opportunities and technical challenges of PRAM. The most important challenge of PRAM is the reduction of the writing current. Various approaches to reduce the writing current will be reviewed and the prospects of PRAM are discussed.     

Extended analysis of ground impedance measurement using the fall-of-potential method

An extended analysis of ground impedance measurement using the fall-of-potential method will be presented. An interesting curve that represents the exact locations of the potential probe when the potential and current probes are in different directions is obtained for the first time. Curves representing measurement error are also presented for the case when the potential probe is placed in locations where the correct ground impedance cannot be measured. A similar analysis for ground impedance measurements in multilayer soils is also discussed. The study presented in this paper has extended the theory of the conventional fall-of-potential method and the results obtained can serve as a practical guide for ground impedance measurements made using this method.     

标准椅全身计数器对不同年龄组均匀体模源全能峰效率的刻度

本文介绍了用标准液体源均匀充入聚氯乙烯制的体模,刻度标准椅全身计数器〔φ8″×4″(NaI)〕的方法和结果。分别就代表6个年龄组的体模,测定了标准椅全身计数器对5种能量(364,637,898,1460和1836keV)γ射线的全能峰效率;给出了全能峰效率与γ射线能量和被测对象体重的关系曲线。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate