挂蜡机控制器设计

介绍挂蜡机控制器的设计方法,采用单片机控制,系统由键盘电路、单片机、A/D转换器、液晶显示器、时间电路和驱动电路等组成。根据系统要求,对单片机选择、键盘接口、时间电路接口、液晶显示电路接口、A/D转换器接口和驱动电路的设计作了较详细的介绍,并对电路的工作原理进行了介绍。     

基于Zigbee的气田智能无线数据采集系统的设计

气田井口管道数据采集是智能化气田生产与安全监控的关键技术。针对目前有线仪表存在的问题,文章设计了基于Zigbee的气田井口无线温度、压力、流量仪表数据采集与传输系统,确保了数据的实时采集与安全传输。通过在现场测试,无线Zigbee仪表采集系统能实时反映气田井口的温度、压力与流量数据,实现了气田的异常报警与安全生产,在智慧化气田的生产中有很好的应用前景。     

Impact of the injection‐level‐dependent lifetime on Voc,FF, ideality m,J02, and the dim light response in a commercial PERC cell

The injection‐level‐dependent (ILD) lifetime of the silicon wafer impacts many characteristics of the final photovoltaic cell. While efficiency is commonly understood to be impacted by the silicon bulk lifetime (at the maximum power point injection level), this work demonstrates the wide ranging impacts of ILD lifetime on the V_oc, the fill factor (FF), the diode ideality factor m, and the dim light response. Instead of a two‐diode model, we utilize a boundary + ILD bulk lifetime model to analyze a commercial passivated emitter rear contact (PERC) cell featuring an AlO_x dielectric rear passivation. The ILD lifetime is directly measured and used to calculate the bulk recombination current across injection levels. With this boundary + ILD lifetime model, we demonstrate the role of the ILD lifetime on many cell parameters in this PERC cell. For most high efficiency commercial p‐type monocrystalline solar cells, the typically lower bulk lifetime at the maximum power point versus the lifetime at the open circuit point reduces the measured FF and pseudo‐FF. This work illustrates that for a commercial PERC cell with AlO_x rear passivation, the ILD lifetime is the primary mechanism behind reduced FF, ideality factors greater than 1, and the source of the J₀₂ term in the two‐diode model. The crucial implications of this work are not only to better understand commercial PERC cell loss mechanisms but also to encourage a focus on different metrics in cell diagnostics. One such metric is the V_oc at 0.1 or 0.05 suns. Copyright © 2016 John Wiley & Sons, Ltd.     

链路系统的色亮增益不等公式的建立和讨论

以泰克公司对色亮增益相对失真提出的色亮增益不等的定义为依据,根据视频电路的传输理论建立了链路系统的色亮增益不等的计算公式,并对ＣＣＩＲ和ＧＢ确认的统计性公式作了一些讨论。     

宽带城域网及其增值业务

城市信息化离不开城市信息高速公路 ,宽带城域网的建设为城市信息化提供了高速通道。IP网和ATM网将是宽带城域网的核心平台 ,宽带接入技术将成为城域网接入的主要手段 ,宽带城域网整体解决方案离不开IP软技术的应用 ,三网融合将是宽带城域网发展方向。增值业务是网络不断发展的动力所在     

Room-Temperature Metal-Catalyzed Ultrafast Gasification of Ultrathin Boron Flakes

The trivalent outer shell of boron renders this element electron-poor but chemically rich, exhibiting more than one dozen allotropes. Its 2D polymorph has been recently synthesized on metal substrates under ultrahigh vacuum and has attracted intense interest. However, probing its properties ex situ has been challenging due to the quality degradation—surface oxidation—that occurs upon exposure to ambient environments. Herein, this surface chemistry is investigated in regard to the air stability of ultrathin boron flakes on metals prepared by atmospheric-pressure chemical vapor deposition. The characteristic Volmer–Weber growth is recognized by the stacking of polygon-shaped, thin flakes as isolated islands. Significantly, the metal-catalyzed, ultrafast gasification of boron flakes at room temperature, exemplified by the complete, spontaneous vanishment of 200 nm-thick boron islands in 3 h is observed. A two-step mechanism, first oxygen-involved surface oxidation and then subsequent reactions with water forming a highly volatile boric acid layer, is unambiguously revealed by combined surface characterizations. The catalysis by metal substrates, corroborated by theoretical calculations, is attributed as the crucial cause of the unprecedented gasification. The concept of oxygen-free growth is thereby proposed for air-sensitive material growth by introducing in situ oxygen scavengers. These findings significantly expand the fundamental understanding of the surface chemistry of boron and pave the way for the chemical vapor deposition growth of hydrophobic materials.     

Selenium Substitution in Bithiophene Imide Polymer Semiconductors Enables High-Performance n-Type Organic Thermoelectric

Designing n-type polymers with high electrical conductivity remains a major challenge for organic thermoelectrics (OTEs). Herein, by devising a novel selenophene-based electron-deficient building block, the pronounced advantages of selenium substitution in simultaneously enabling advanced n-type polymers is demonstrated with high mobility (≈2 orders of magnitude higher versus their sulfur-based analogues due to both intensified intra- and inter-chain interactions) and much improved n-doping efficiency (enabled by the largely lowered LUMO level with a ≈0.2 eV margin) of the resulting polymers. Via side chain optimization and donor engineering, the selenium-substituted polymer, f-BSeI2TEG-FT, achieves a highest conductivity of 103.5 S cm⁻¹ and power factor of 70.1 µW m⁻¹ K⁻², which are among the highest values reported in literature for n-type polymers, and f-BSeI2TEG-FT greatly outperformed the sulfur-based analogue polymer by 40% conductivity increase. These results demonstrate that selenium substitution is a very effective strategy for improving n-type performance and provide important structure-property correlations for developing high-performing n-type OTE materials.     

烧结温度对漂珠/ZrO2多孔轻质材料性能的影响

以漂珠为成孔材料,以ZrO2为结合剂,采用凝胶注模的方法制备出多孔轻质材料。通过分析材料的微观形貌、物相组成、显气孔率、体积密度、抗弯强度等性能参数,研究了烧结温度1200℃~1500℃对材料性能的影响。结果得出,烧结温度达到1400℃时,漂珠外壳与氧化锆的界面结合不再明显,ZrO2颗粒由点接触扩展到面接触;烧结温度1400℃的试样中锆英石的峰最强,说明漂珠和氧化锆已烧结熔融;1400℃下制备试样的显气孔率最大(68%),体积收缩率(20.8%)最低,而抗弯强度可达7.5MPa;烧结温度控制在1400℃,可使材料处于烧结中期,保证材料的各项性能满足其应用需求。     

激光等离子体声波及应用

本文简要介绍了激光等离子体声波的产生机理、特性应用前景。     

PSD光电自动瞄准系统

介绍了一种计算机控制的ＰＳＤ光电瞄准系统,分析了系统的组成、工作原理以及光电信号的处理方法。ＰＳＤ光电瞄准系统基本实现了导弹初始定向的自动化,其准直精度或方位偏差的测量精度可以达到２″,满足了系统的实际需要。最后阐述了瞄准系统的平台驱动电机的细分控制。