Parametric inference for step-stress models

Applications of the additive accumulation of damages (AAD) or the accelerated failure time (AFT) and the proportional hazards (PH) models in accelerated life testing with step-stresses are discussed. A new model including AAD and PH models is proposed. It is more reasonable than the PH model and wider then the AAD model. Constructing the maximum likelihood function is discussed     

Effect of Thermohydrogen Treatment on the Structure and Properties of Titanium Alloy Castings

Metal Science and Heat Treatment -     

640-Gb/s high-speed ATM switching system based on 0.25-μm CMOS,MCM-C, and optical WDM interconnection

A 640-Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM-C, 0.25-μm CMOS, and optical wavelength-division-multiplexing (WDM) interconnection is fabricated for future broadband backbone networks. A 40-layer, 160×114 mm ceramic MCM forms the basic ATM switch module with 80-Gb/s throughput. It consists of 8 advanced 0.25-μm CMOS LSIs and 32 I/O bipolar LSIs. The MCM has a 7-layer high-speed signal line structure having 50-Ω strip lines, high-speed signal lines, and 33 power supply layers formed using 50-μm thick ceramic layers to achieve high capacity. A uniquely structured closed-loop-type liquid cooling system for the MCM is used to cope with its high power dissipation of 230 W. A three-stage ATM switch is made using the optical WDM interconnection between high-performance MCMs. For WDM interconnection, newly developed compact 10-Gb/s, 8-WDM optical transmitter and receiver modules are used. These modules are each only 80×120×20 mm and dissipate 9.65 W and 22.5 W, respectively. They have a special chassis for cooling, which contains high-performance heat-conductive plates and micro-fans. An optical WDM router based on an arrayed waveguide router is used for mesh interconnection of boards. The optical WDM interconnect has 640-Gb/s throughput and simple interconnection     

Characterization method of thermomechanical parameters for microelectronic materials

Reliability of thermomechanical simulations is critically linked to the accuracy of the mechanical properties that govern the behaviour of structure, like Young's modulus (E) and coefficient of thermal expansion (CTE). For many cases, the values found in literatures are dealing with bulk properties without detailed information on temperature effects. To address such issues, it is necessary to measure the materials parameters as a function of temperature. The measurement of CTE is usually accomplished by evaluating the thermal deflections of a subjected material layer deposited on a substrate, providing that E is known at a specific temperature of experiment. A bilayer method, based on theory of elasticity, is proposed to determine both E and CTE for a given temperature with a good resolution. This paper presents the theoretical analysis, the design and process of the microsystem test structures, and the main calculation results.     

Measurements of single chain form factors by small-angle neutron scattering from polystyrene blends containing high concentrations of labelled molecules

A series of small angle neutron scattering measurements on blends of normal polystyrene (PSH) and labelled (deuterated) polystyrene (PSD) have been made with concentrations of PSD from 5 to 50 mol %. It is shown that the single chain form factor of the polymer in bulk can be obtained from a single concentration measurement for any concentration of labelled molecules, providing the molecular weights of the parent and labelled molecules are the same and the molecular weight distributions are narrow.     

The properties of a spinel copper cobaltite prepared at low temperatures and normal pressure

The properties of a spinel copper cobaltite obtained by thermal decomposition of mixed nitrates of both metals at 350°C and normal pressure are described. It has been shown that the maximum copper content (x) in the spinel Cu_xCo_3?xO₄ does not exceed 0.9. When the copper amount in the initial mixture is higher a second phase CuO is formed. The copper ions are distributed over the A- and the B-sites of the spinel lattice, i.e. the spinel is partially inverted. Such a model explains well the data obtained about the lattice parameter, IR-absorption and the magnetic susceptibility of the samples with different x.     

Use of166mHo for calibration of gamma-ray spectrometers with semiconductor detectors

Translated from Atomnaya Énergiya, Vol. 67, No. 3, pp. 215–216, September, 1989.