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951.
The continuous reduction of chip size driven by the market demand has a significant impact on circuit design and assembly process of IC packages. Shrinking chip size and increasing I/O counts require finer bond pad pitch and bond pad size for circuitry layout. As a result, serious wire deflection during transfer molding process could make adjacent wires short, and this issue becomes more critical as a smaller wire diameter has to be applied for the finer pitch wire bonded IC devices.This paper presents a new encapsulation process development for 50 μm fine pitch plastic ball grid array package. Since reduced wire diameter decreases the bending strength of bonded wires significantly, wire deflection during molding process becomes quite serious and critical. Experiments on conventional transfer molding were conducted to evaluate wire span threshold with 23.0 μm diameter gold wire. The results show that the wire span threshold is about 4.1 mm, which is much shorter than the wire span threshold of over 5.0 mm for wire with 25.4 μm diameter. Finite element analysis shows there is a significant difference in the wire deflection between 23.0 μm gold wire and 25.4 μm gold wire diameter under the same action of mold flow. A novel encapsulation method is introduced using non-sweep solution. The wire span could be extended to over 5.0 mm with wire sweep less than 1%. Reliability tests conducted showed that all the units passed 1000 temperature cycles (−55 to 125 °C) with JEDEC moisture sensitivity level 2a (60 °C/60% relative humidity for 120 h) and 3 times reflow (peak temperature at 220–225 °C). It is believed that this solution could efficiently overcome the risk of wire short issues and improve the yield of ultra fine pitch wire bonds in high-volume production. 相似文献
952.
953.
954.
安棚深层系凝析气井射孔压井液技术研究 总被引:1,自引:0,他引:1
介绍了一种保护油气层的射孔压井液技术,该技术所用的配方具有低密度,低表面张力且具有较强的防膨能力等特点,在安棚深层系低孔低渗油田安3003等凝析气井作业中现场试验,解决了安棚深层系低压气井的水锁伤害等问题,对低孔低渗油气田作业入井流体的研究与应用具有较好的借鉴意义。 相似文献
955.
Fixed point theorem-based iterative learning control for LTV systems with input singularity 总被引:1,自引:0,他引:1
In this paper, we address a challenging and open problem: how to design a suitable iterative learning control (ILC) system in the presence of input singularity, which is incurred by the singularities of the system direct feed-through term. Considering two typical types of input singularities, we first revise the ILC operators accordingly by adding a forgetting factor and incorporating a time-varying learning gain, in the sequel guarantee ILC operators to be contractible. Next, using the Banach fixed-point theorem, we demonstrate that the output sequence can either enter and remains ultimately in a designated neighborhood of the target trajectory, or is bounded by a class K function. Finally, an illustrative example is presented. 相似文献
956.
Sood Johanna R.; Cisek Edward; Zimmerman Joan; Zaleski Ellen H.; Fillmore Herbert H. 《Canadian Metallurgical Quarterly》2003,48(1):44
Objective: To replicate and extend P. A. Lichtenberg and colleagues' (1996) cross-disciplinary intervention to improve physical and mental health among older adults. Participants: 14 depressed older adults (6 treatment, 8 control). Setting: The short-term rehabilitation unit of an urban nursing home. Intervention: Occupational therapists were trained to treat depression using pleasant events and cognitive-behavioral therapies. Outcome Measures: Geriatric Depression Scale, the Short Form-12, and the Multi-Level Assessment Instrument: Activities of Daily Living. Results: No significant group differences were found in physical or mental health. However, more control group members (75%) than treatment group members (33%) were depressed at study completion. Conclusions: The treatment of depressive symptoms can be integrated with a nonmental health treatment modality. (PsycINFO Database Record (c) 2011 APA, all rights reserved) 相似文献
957.
Schmitt Neal; Oswald Fred L.; Kim Brian H.; Gillespie Michael A.; Ramsay Lauren J.; Yoo Tae-Yong 《Canadian Metallurgical Quarterly》2003,88(6):979
The current study investigated the impact of requiring respondents to elaborate on their answers to a biodata measure on mean scores, the validity of the biodata item composites, subgroup mean differences, and correlations with social desirability. Results of this study indicate that elaborated responses result in scores that are much lower than nonelaborated responses to the same items by an independent sample. Despite the lower mean score on elaborated items, it does not appear that elaboration affects the size of the correlation between social desirability and responses to biodata items or that it affects criterion-related validity or subgroup mean differences in a practically significant way. (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
958.
Materials with inherent microstructures like granular media, foams or spongy bones often show a complex constitutive behaviour
on the macroscale while the microscopic constitutive equations may be formulated in a simple fashion. Applying homogenization
procedures allows to transfer the information from the microlevel to the macrolevel.
In the present contribution the porous structure of hard biological tissues, i.e. of spongy bones, is investigated. On the
macroscale the approach is embedded into an extended continuum mechanical setting in order to capture size effects. The constitutive
equations are formulated on the microscopic level taking into account growth and reorientation of the microstructural elements.
By application of a strain-driven numerical homogenization procedure the macroscopic stress response is obtained. 相似文献
959.
960.
Chadwin D. Young Gennadi Bersuker Yuegang Zhao Jeff J. Peterson Joel Barnett George A. Brown Jang H. Sim Rino Choi Byoung Hun Lee Peter Zeitzoff 《Microelectronics Reliability》2005,45(5-6):806
Effects of constant voltage stress (CVS) on gate stacks consisting of an ALD HfO2 dielectric with various interfacial layers were studied with time dependent sensing measurements: DC I–V, pulse I–V, and charge pumping (CP) at different frequencies. The process of injected electron trapping/de-trapping on pre-existing defects in the bulk of the high-κ film was found to constitute the major contribution to the time dependence of the threshold voltage (Vt) shift during stress. The trap generation observed with the low frequency CP measurements is suggested to occur within the interfacial oxide layer or the interfacial layer/high-κ interface, with only a minor effect on Vt. 相似文献